Ion Implanted Strip Optical Waveguides in GaAs/GaAl as MQW Material

1988 ◽  
Vol 126 ◽  
Author(s):  
B. L. Weiss ◽  
A. C. Wismayer
Keyword(s):  
Optical Waveguides ◽  
Subsequent Annealing ◽  
First Report ◽  
Lateral Confinement ◽  
Rib Waveguides ◽  
Ion Implanted

ABSTRACTThis paper is the first report of the use of Si+ implantation into GaAs/GaAlAs MQW material to form optical waveguides operating at a wavelength of 1.15μm. Lateral confinement is achieved by mixing of the MQW material which is produced by the implantation of Si+ and subsequent annealing at 750°C. The properties of these waveguides are compared with those of chemically etched rib waveguides and are shown to have reasonably low losses.

Dislocation distributions in ion implanted optical waveguides

1994 ◽  
Vol 94 (4) ◽  
pp. 417-423 ◽  
Author(s):  
S.D. Brown ◽  
R.S. Lowther-Harris ◽  
P.W. Haycock ◽  
J.F. Kelly ◽  
P.J. Chandler ◽  
...  
Keyword(s):  
Optical Waveguides ◽  
Ion Implanted

Ion‐implanted optical waveguides in KTaO3

1992 ◽  
Vol 71 (1) ◽  
pp. 49-52 ◽  
Author(s):  
J. Y. C. Wong ◽  
L. Zhang ◽  
G. Kakarantzas ◽  
P. D. Townsend ◽  
P. J. Chandler ◽  
...  
Keyword(s):  
Optical Waveguides ◽  
Ion Implanted

Comparison between MeV Ni+ and He+ ion-implanted planar optical waveguides in quartz

2001 ◽  
Vol 190 (1-6) ◽  
pp. 153-157 ◽  
Author(s):  
Feng Chen ◽  
Hui Hu ◽  
Fei Lu ◽  
Bo-Rong Shi ◽  
Jian-Hua Zhang ◽  
...  
Keyword(s):  
Optical Waveguides ◽  
Planar Optical Waveguides ◽  
Ion Implanted

Development of ion-implanted optical waveguides in optical materials: A review

2007 ◽  
Vol 29 (11) ◽  
pp. 1523-1542 ◽  
Author(s):  
Feng Chen ◽  
Xue-Lin Wang ◽  
Ke-Ming Wang
Keyword(s):  
Optical Waveguides ◽  
Optical Materials ◽  
Ion Implanted

Ge Nanocrystal Formed Directly by High-Dose-Ion-Implantation and the Related UV-VIS Photoluminescence

2003 ◽  
Vol 792 ◽  
Author(s):  
Yingqiu Zeng ◽  
Tiecheng Lu ◽  
Ping Zou ◽  
Sha Zhu ◽  
Lumin Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Compressive Stress ◽  
Formation Mechanism ◽  
Subsequent Annealing ◽  
Threshold Dose ◽  
High Dose ◽  
Annealing Zone ◽  
Ion Implanted

ABSTRACTThe investigation of nanocrystalline Ge (nc-Ge) directly prepared with high dose Ge ion implantation of 1×1016, 1×1017, 5×1017 and 1×1018cm-2 respectively without subsequent annealing is presented in this paper. The specimens were measured by means of GIXRD, LRS and PL. The results show the nc-Ge, which possesses strong compressive stress, can be fabricated when the implanting dose of Ge ions is over the threshold dose∼1×1017cm-2. The content and size of nc-Ge will enlarge with increasing dose. The nc-Ge formation mechanism may be the Ge atoms in the amorphous Ge (a-Ge) clusters, which are formed through the aggregation of implanted Ge ions, obtain energy from the instant local annealing zone induced by the incident Ge ion and reconstruct to nc-Ge existing in a-Ge clusters. The PL results indicate the strong PL peaks centered at about 295, 400 and 570 nm can be observed in implanted samples. The intensity of these PL peaks increases with increasing dose. The related PL mechanism in Ge-ion-implanted SiO2 film has also been discussed.

scholarly journals Ion implanted optical waveguides in nonlinear optical organic crystal

2007 ◽  
Vol 15 (2) ◽  
pp. 629 ◽  
Author(s):  
Lukas Mutter ◽  
Andrea Guarino ◽  
Mojca Jazbinšek ◽  
Marko Zgonik ◽  
Peter Günter ◽  
...  
Keyword(s):  
Optical Waveguides ◽  
Nonlinear Optical ◽  
Organic Crystal ◽  
Ion Implanted
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