Determination of spin‐polarized secondary‐electron escape depth through oxidation of iron

1990 ◽  
Vol 68 (11) ◽  
pp. 5835-5839 ◽  
Author(s):  
T. VanZandt ◽  
R. Browning
Keyword(s):  
Secondary Electron ◽  
Escape Depth ◽  
Spin Polarized ◽  
Electron Escape

Determination of the electron escape depth in gold by means of ESCA

1970 ◽  
Vol 8 (18) ◽  
pp. 1479-1481 ◽  
Author(s):  
Yves Baer ◽  
Per Filip Hedén ◽  
Jan Hedman ◽  
Martin Klasson ◽  
Carl Nordling
Keyword(s):  
Escape Depth ◽  
Electron Escape

Determination of the Electron Escape Depth for NEXAFS Spectroscopy

Langmuir ◽  
2009 ◽  
Vol 25 (11) ◽  
pp. 6341-6348 ◽  
Author(s):  
K. E. Sohn ◽  
M. D. Dimitriou ◽  
J. Genzer ◽  
D. A. Fischer ◽  
C. J. Hawker ◽  
...  
Keyword(s):  
Escape Depth ◽  
Nexafs Spectroscopy ◽  
Electron Escape

Determination of electron escape depth in ultrathin silicon oxide

2005 ◽  
Vol 86 (8) ◽  
pp. 081911 ◽  
Author(s):  
H. Nohira ◽  
H. Okamoto ◽  
K. Azuma ◽  
Y. Nakata ◽  
E. Ikenaga ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Escape Depth ◽  
Electron Escape

Assessment of Photovoltaic Junction Position in CdTe Solar Cells Using a Combined FIB-EBIC Technique

2012 ◽  
Vol 1432 ◽  
Author(s):  
Jonathan D. Major ◽  
Leon Bowen ◽  
Robert E. Treharne ◽  
Ken Durose
Keyword(s):  
Solar Cells ◽  
Secondary Electron ◽  
Ion Beam ◽  
Rf Sputtering ◽  
Cdte Solar Cells ◽  
Close Space Sublimation ◽  
Focussed Ion Beam ◽  
Electron Beam Induced Current ◽  
Space Sublimation

ABSTRACTTwo issues relating to the determination of junction position in thin film CdTe solar cells have been investigated. Firstly, the use of a focussed ion beam (FIB) milling as a method of sample preparation for electron beam induced current (EBIC) analysis is demonstrated. It is superior to fracturing methods. High quality secondary electron and combined secondary electron/EBIC images are presented and interpreted for solar cells with CdTe layers deposited by both close space sublimation (CSS) or RF sputtering. Secondly, it was shown that in an RF-sputtered CdTe device, while the photovoltaic junction was buried ~1.1 μm from the metallurgical interface, the shape of the external quantum efficiency (EQE) curve did not indicate the presence of a buried homo-junction. SCAPS modelling was used to verify that EQE curve shapes are not sensitive to junctions buried < 1.5μm from the CdTe/CdS interface.

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