Determination of electron escape depth in ultrathin silicon oxide

2005 ◽  
Vol 86 (8) ◽  
pp. 081911 ◽  
Author(s):  
H. Nohira ◽  
H. Okamoto ◽  
K. Azuma ◽  
Y. Nakata ◽  
E. Ikenaga ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Escape Depth ◽  
Electron Escape

Determination of the electron escape depth in gold by means of ESCA

1970 ◽  
Vol 8 (18) ◽  
pp. 1479-1481 ◽  
Author(s):  
Yves Baer ◽  
Per Filip Hedén ◽  
Jan Hedman ◽  
Martin Klasson ◽  
Carl Nordling
Keyword(s):  
Escape Depth ◽  
Electron Escape

Determination of the Electron Escape Depth for NEXAFS Spectroscopy

Langmuir ◽  
2009 ◽  
Vol 25 (11) ◽  
pp. 6341-6348 ◽  
Author(s):  
K. E. Sohn ◽  
M. D. Dimitriou ◽  
J. Genzer ◽  
D. A. Fischer ◽  
C. J. Hawker ◽  
...  
Keyword(s):  
Escape Depth ◽  
Nexafs Spectroscopy ◽  
Electron Escape

Cathodoluminescence of SiO2/Si System

2009 ◽  
Vol 156-158 ◽  
pp. 487-492 ◽  
Author(s):  
M.V. Zamoryanskaya
Keyword(s):  
Activation Energy ◽  
Electron Beam ◽  
Rise Time ◽  
Silicon Oxide ◽  
Beam Current ◽  
Electron Beam Current ◽  
Electron Traps ◽  
Definition Of ◽  
Luminescent Centers

In this paper the new method for determination of luminescent centers concentration are discussed. While the possibility of electron traps determination and definition of its activation energy are suggested. The cathodoluminescent (CL) method was used. The determination of luminescent centers concentration in silicon oxide is based on the measurements of dependences of CL intensity on electron beam current. The presence and energy of activation of electron traps were studied by measurement of rise time and decay of luminescent band during the stationary irradiation of silica by electron beam.

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