scholarly journals Impact ionization fronts in semiconductors: Numerical evidence of superfast propagation due to nonlocalized preionization

2010 ◽  
Vol 108 (3) ◽  
pp. 034501 ◽  
Author(s):  
Pavel Rodin ◽  
Andrey Minarsky ◽  
Igor Grekhov
Keyword(s):  
Impact Ionization ◽  
Numerical Evidence ◽  
Ionization Fronts

scholarly journals Tunneling-assisted impact ionization fronts in semiconductors

2002 ◽  
Vol 92 (2) ◽  
pp. 958-964 ◽  
Author(s):  
Pavel Rodin ◽  
Ute Ebert ◽  
Willem Hundsdorfer ◽  
Igor Grekhov
Keyword(s):  
Impact Ionization ◽  
Ionization Fronts

scholarly journals Impact ionization fronts in semiconductors: Superfast propagation due to nonlocalized preionization

2008 ◽  
Vol 93 (1) ◽  
pp. 013503 ◽  
Author(s):  
Pavel Rodin ◽  
Andrey Minarsky ◽  
Igor Grekhov
Keyword(s):  
Impact Ionization ◽  
Ionization Fronts

Dendritic Growth Failure of a Mesa Diode

1997 ◽  
Author(s):  
P. Singh ◽  
V. Cozzolino ◽  
G. Galyon ◽  
R. Logan ◽  
K. Troccia ◽  
...  
Keyword(s):  
Electric Fields ◽  
Dendritic Growth ◽  
Silicon Oxide ◽  
Impact Ionization ◽  
Electron Tunneling ◽  
Growth Failure ◽  
Side Wall ◽  
Oxide Interface ◽  
Band Bending ◽  
Cross Section Area

Abstract The time delayed failure of a mesa diode is explained on the basis of dendritic growth on the oxide passivated diode side walls. Lead dendrites nucleated at the p+ side Pb-Sn solder metallization and grew towards the n side metallization. The infinitesimal cross section area of the dendrites was not sufficient to allow them to directly affect the electrical behavior of the high voltage power diodes. However, the electric fields associated with the dendrites caused sharp band bending near the silicon-oxide interface leading to electron tunneling across the band gap at velocities high enough to cause impact ionization and ultimately the avalanche breakdown of the diode. Damage was confined to a narrow path on the diode side wall because of the limited influence of the electric field associated with the dendrite. The paper presents experimental details that led to the discovery of the dendrites. The observed failures are explained in the context of classical semiconductor physics and electrochemistry.

scholarly journals Temperature dependence of impact ionization in GaAs

2003 ◽  
Vol 50 (10) ◽  
pp. 2027-2031 ◽  
Author(s):  
C. Groves ◽  
R. Ghin ◽  
J.P.R. David ◽  
G.J. Rees
Keyword(s):  
Temperature Dependence ◽  
Impact Ionization

Microwave modulator utilizing impact ionization in bulk germanium at 4.2°K

1965 ◽  
Vol 53 (9) ◽  
pp. 1263-1263
Author(s):  
W.W. Heinz ◽  
S. Okwit
Keyword(s):  
Impact Ionization
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