Field-enhanced ionization of deep-level centers as a triggering mechanism for superfast impact ionization fronts in Si structures

2005 ◽  
Vol 98 (9) ◽  
pp. 094506 ◽  
Author(s):  
Pavel Rodin ◽  
Anna Rodina ◽  
Igor Grekhov
Keyword(s):  
Impact Ionization ◽  
Deep Level ◽  
Triggering Mechanism ◽  
Ionization Fronts

scholarly journals Tunneling-assisted impact ionization fronts in semiconductors

2002 ◽  
Vol 92 (2) ◽  
pp. 958-964 ◽  
Author(s):  
Pavel Rodin ◽  
Ute Ebert ◽  
Willem Hundsdorfer ◽  
Igor Grekhov
Keyword(s):  
Impact Ionization ◽  
Ionization Fronts

scholarly journals Impact ionization fronts in semiconductors: Superfast propagation due to nonlocalized preionization

2008 ◽  
Vol 93 (1) ◽  
pp. 013503 ◽  
Author(s):  
Pavel Rodin ◽  
Andrey Minarsky ◽  
Igor Grekhov
Keyword(s):  
Impact Ionization ◽  
Ionization Fronts

Improved performance of Ni/GaN Schottky barrier impact ionization avalanche transit time diode with n-type GaN deep level defects

2020 ◽  
Vol 36 (2) ◽  
pp. 025001
Author(s):  
Xiao-Yu Zhang ◽  
Lin-An Yang ◽  
Wen-lu Yang ◽  
Yang Li ◽  
Xiao-Hua Ma ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Transit Time ◽  
Impact Ionization ◽  
Deep Level ◽  
Improved Performance
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