A novel type of power picosecond semiconductor switches based on tunneling-assisted impact ionization fronts

2003 ◽  
Author(s):  
P. Rodin ◽  
U. Ebert ◽  
W. Hundsdorfer ◽  
I. Grekhov
Keyword(s):  
Impact Ionization ◽  
Semiconductor Switches ◽  
Ionization Fronts

Electron Avalanche Domains in High Gain Semi-Insulating GaAs Photoconductive Semiconductor Switches

2014 ◽  
Vol 941-944 ◽  
pp. 619-622
Author(s):  
Hong Liu ◽  
Li Zheng ◽  
Wei Yang ◽  
Xiao Ling Zhu ◽  
Song Hui Dai ◽  
...  
Keyword(s):  
Carrier Density ◽  
High Field ◽  
Impact Ionization ◽  
High Gain ◽  
Electron Avalanche ◽  
Carrier Injection ◽  
Carrier Generation ◽  
Semiconductor Switches ◽  
Current Voltage ◽  
High Carrier

The electron avalanche domains (EAD) in high gain semi-insulating (SI) GaAs photoconductive semiconductor switches (PCSS) are analyzed. The EAD are closely related to the growing domains associated with carrier injection. The EAD formation requires high carrier density and high field impact ionization. The avalanche carrier generation in the EAD can cause and complete the localized direct transform from theN-shaped current-voltage (I-V) characteristics toS-shapedI-Vcharacteristics. Then a transition from the EAD to current filament mechanisms can occur. The EAD ideas can explain the branch and the bend of the filaments during the formation and propagation of the filaments.

Carrier Injection in High Gain GaAs Photoconductive Semiconductor Switches

2014 ◽  
Vol 941-944 ◽  
pp. 602-605
Author(s):  
Li Zheng ◽  
Hong Liu
Keyword(s):  
Impact Ionization ◽  
High Gain ◽  
Electron Avalanche ◽  
Carrier Injection ◽  
Carrier Generation ◽  
Semiconductor Switches ◽  
Current Filaments ◽  
The Impact ◽  
Photo Ionization

The carrier injection in high gain semi-insulating GaAs photoconductive semiconductor switches (PCSS) is studied. A great quantity of carrier generation in the insulating region of the GaAs PCSS depends upon photo-ionization and impact ionization. The impact ionization avalanche carrier generation exists in the electron avalanche domains (EAD). The EAD is closely related to the growing domains associated with carrier injection. Carriers are injected either at the contacts (Cathode and Anode) or at the tip of the current filaments which works as a “contact reaching further into the gap”. Carrier injection plays an important role for the EAD formation.

scholarly journals Tunneling-assisted impact ionization fronts in semiconductors

2002 ◽  
Vol 92 (2) ◽  
pp. 958-964 ◽  
Author(s):  
Pavel Rodin ◽  
Ute Ebert ◽  
Willem Hundsdorfer ◽  
Igor Grekhov
Keyword(s):  
Impact Ionization ◽  
Ionization Fronts

scholarly journals Impact ionization fronts in semiconductors: Superfast propagation due to nonlocalized preionization

2008 ◽  
Vol 93 (1) ◽  
pp. 013503 ◽  
Author(s):  
Pavel Rodin ◽  
Andrey Minarsky ◽  
Igor Grekhov
Keyword(s):  
Impact Ionization ◽  
Ionization Fronts

Tunable Resonator Employing Comb-shaped Transmission Line and Semiconductor Switches

2014 ◽  
Vol E97.C (8) ◽  
pp. 795-802 ◽  
Author(s):  
Kunihiro KAWAI ◽  
Daisuke KOIZUMI ◽  
Hiroshi OKAZAKI ◽  
Shoichi NARAHASHI
Keyword(s):  
Transmission Line ◽  
Semiconductor Switches ◽  
Tunable Resonator

Dendritic Growth Failure of a Mesa Diode

1997 ◽  
Author(s):  
P. Singh ◽  
V. Cozzolino ◽  
G. Galyon ◽  
R. Logan ◽  
K. Troccia ◽  
...  
Keyword(s):  
Electric Fields ◽  
Dendritic Growth ◽  
Silicon Oxide ◽  
Impact Ionization ◽  
Electron Tunneling ◽  
Growth Failure ◽  
Side Wall ◽  
Oxide Interface ◽  
Band Bending ◽  
Cross Section Area

Abstract The time delayed failure of a mesa diode is explained on the basis of dendritic growth on the oxide passivated diode side walls. Lead dendrites nucleated at the p+ side Pb-Sn solder metallization and grew towards the n side metallization. The infinitesimal cross section area of the dendrites was not sufficient to allow them to directly affect the electrical behavior of the high voltage power diodes. However, the electric fields associated with the dendrites caused sharp band bending near the silicon-oxide interface leading to electron tunneling across the band gap at velocities high enough to cause impact ionization and ultimately the avalanche breakdown of the diode. Damage was confined to a narrow path on the diode side wall because of the limited influence of the electric field associated with the dendrite. The paper presents experimental details that led to the discovery of the dendrites. The observed failures are explained in the context of classical semiconductor physics and electrochemistry.

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