scholarly journals Temperature dependence of impact ionization in GaAs

2003 ◽  
Vol 50 (10) ◽  
pp. 2027-2031 ◽  
Author(s):  
C. Groves ◽  
R. Ghin ◽  
J.P.R. David ◽  
G.J. Rees
Keyword(s):  
Temperature Dependence ◽  
Impact Ionization

Temperature dependence of electron impact ionization in In0.53Ga0.47As

2004 ◽  
Vol 84 (13) ◽  
pp. 2322-2324 ◽  
Author(s):  
C. H. Tan ◽  
G. J. Rees ◽  
P. A. Houston ◽  
J. S. Ng ◽  
W. K. Ng ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Electron Impact ◽  
Impact Ionization ◽  
Electron Impact Ionization

Impact Ionization, Degradation, and Breakdown in SiO2

1992 ◽  
Vol 284 ◽  
Author(s):  
D. J. Dimaria ◽  
E. Cartier ◽  
D. Arnold
Keyword(s):  
Silicon Dioxide ◽  
Temperature Dependence ◽  
Impact Ionization ◽  
Charge Trapping ◽  
Oxide Thickness ◽  
Bandgap Energy ◽  
Strongly Correlated ◽  
Hot Electron ◽  
Defect Production ◽  
Oxide Degradation

ABSTRACTDestructive breakdown in silicon dioxide is shown to be strongly correlated to the oxide degradation caused by hot-electron-induced defect production and charge trapping ner the interfaces of the films. Two well defined transitions in the chargc-to-breakdown data as a function of field and oxide thickness are shown to coincide with the onset of mechanisms due to trap creation and impact ionization by electrons with energies exceeding 2 and 9 eV (the SiO2 bandgap energy), respectively. The temperature dependence of charge-to-breakdown is also shown to be consistent with that of these two defect-producing mechanisms.

Temperature Dependence of Impact Ionization Coefficients in 4H-SiC

2014 ◽  
Vol 778-780 ◽  
pp. 461-466 ◽  
Author(s):  
Hiroki Niwa ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Breakdown Voltage ◽  
Elevated Temperatures ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Negative Temperature ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Ionization Coefficients

Impact ionization coefficients of 4H-SiC were measured at room temperature and at elevated temperatures up to 200°C. Photomultiplication measurement was done in two complementary photodiodes to measure the multiplication factors of holes (Mp) and electrons (Mn), and ionization coefficients were extracted. Calculated breakdown voltage using the obtained ionization coefficients showed good agreement with the measured values in this study, and also in other reported PiN diodes and MOSFETs. In high-temperature measurement, breakdown voltage exhibited a positive temperature coefficient and multiplication factors showed a negative temperature coefficient. Therefore, extracted ionization coefficient has decreased which can be explained by the increase of phonon scattering. The calculated temperature dependence of breakdown voltage agreed well with the measured values not only for the diodes in this study, but also in PiN diode in other literature.

scholarly journals Temperature dependence of impact ionization in InAs

2013 ◽  
Vol 21 (7) ◽  
pp. 8630 ◽  
Author(s):  
Ian C. Sandall ◽  
Jo Shien Ng ◽  
Shiyu Xie ◽  
Pin Jern Ker ◽  
Chee Hing Tan
Keyword(s):  
Temperature Dependence ◽  
Impact Ionization

scholarly journals Temperature dependence of impact ionization in InAs: erratum

2014 ◽  
Vol 22 (21) ◽  
pp. 25923
Author(s):  
Ian C. Sandall ◽  
Jo Shien Ng ◽  
Shiyu Xie ◽  
Pin Jern Ker ◽  
Chee Hing Tan
Keyword(s):  
Temperature Dependence ◽  
Impact Ionization

scholarly journals Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

2011 ◽  
Vol 679-680 ◽  
pp. 567-570 ◽  
Author(s):  
Duy Minh Nguyen ◽  
Gontran Pâques ◽  
Nicolas Dheilly ◽  
Christophe Raynaud ◽  
Dominique Tournier ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Dependence ◽  
Impact Ionization ◽  
Temperature Range ◽  
Avalanche Diodes ◽  
Ionization Coefficients

Avalanche diodes have been fabricated on 4H-SiC substrate. These diodes show an abrupt avalanche voltage of about 59 V which corresponds to the calculated theoretical one using our previously determined impact ionization coefficients. This avalanche voltage increases by as small as 3.7 mV/K over the investigated temperature range (150K-420K).

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