Direct measurements of compressive and tensile strain during shock breakout by use of subnanosecond x‐ray diffraction

1990 ◽  
Vol 68 (9) ◽  
pp. 4531-4534 ◽  
Author(s):  
J. S. Wark ◽  
D. Riley ◽  
N. C. Woolsey ◽  
G. Keihn ◽  
R. R. Whitlock
Keyword(s):  
Tensile Strain ◽  
X Ray Diffraction ◽  
X Ray ◽  
Direct Measurements

Mapping the Strain State of 3C-SiC/Si (001) Suspended Structures Using μ-XRD

2016 ◽  
Vol 858 ◽  
pp. 274-277 ◽  
Author(s):  
Gerard Colston ◽  
Stephen D. Rhead ◽  
Vishal Ajit Shah ◽  
Oliver J. Newell ◽  
Igor P. Dolbnya ◽  
...  
Keyword(s):  
Convenient Method ◽  
Residual Strain ◽  
Tensile Strain ◽  
Strain State ◽  
Strain Relaxation ◽  
Lattice Parameters ◽  
Raman Shift ◽  
X Ray Diffraction ◽  
X Ray ◽  
Direct Measurements

The residual strain has been mapped across suspended 3C-SiC membranes and wires using synchrotron based micro X-ray diffraction (μ-XRD). Residual tensile strain is observed to relax slightly upon suspension in both sets of structures. Similar maps were acquired by calculating the residual strain from the shift in 3C-SiC Raman peaks. Comparable trends in strain relaxation are observed by both methods, although the sensitivity of μ-XRD is higher using our measurement conditions. While Raman shift provides a fast and convenient method for mapping strain variations, it cannot give direct measurements of the lattice parameters that can be achieved with μ-XRD, making these techniques excellent complimentary methods of mapping residual strain in 3C-SiC.

Silkworm Silk under Tensile Strain Investigated by Synchrotron X-ray Diffraction and Neutron Spectroscopy

2007 ◽  
Vol 40 (4) ◽  
pp. 1035-1042 ◽  
Author(s):  
Tilo Seydel ◽  
Klaas Kölln ◽  
Igor Krasnov ◽  
Imke Diddens ◽  
Nadine Hauptmann ◽  
...  
Keyword(s):  
Tensile Strain ◽  
Neutron Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Silkworm Silk

Direct measurements of field-induced strain at magnetoelectric interfaces by grazing incidence x-ray diffraction

2013 ◽  
Vol 102 (1) ◽  
pp. 011601 ◽  
Author(s):  
M. Abes ◽  
C. T. Koops ◽  
S. B. Hrkac ◽  
H. Greve ◽  
E. Quandt ◽  
...  
Keyword(s):  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Direct Measurements

Direct measurements of field-induced strain in magnetoelectric composites by X-ray diffraction studies of forbidden reflections

2013 ◽  
Vol 113 (12) ◽  
pp. 124303 ◽  
Author(s):  
M. Abes ◽  
C. T. Koops ◽  
S. B. Hrkac ◽  
E. Quandt ◽  
L. Bouchenoire ◽  
...  
Keyword(s):  
X Ray Diffraction ◽  
X Ray ◽  
Magnetoelectric Composites ◽  
Direct Measurements

scholarly journals Simulation Study of Helium Effect on the Microstructure of Nanocrystalline Body-Centered Cubic Iron

Materials ◽  
2018 ◽  
Vol 12 (1) ◽  
pp. 91 ◽  
Author(s):  
Chunping Xu ◽  
Wenjun Wang
Keyword(s):  
Lattice Constant ◽  
Tensile Strain ◽  
Room Temperature ◽  
Md Simulation ◽  
Uniaxial Tensile ◽  
Body Centered Cubic ◽  
X Ray Diffraction ◽  
X Ray ◽  
Swelling Rate ◽  
Simulation Results

Helium (He) effect on the microstructure of nanocrystalline body-centered cubic iron (BCC-Fe) was studied through Molecular Dynamics (MD) simulation and simulated X-ray Diffraction (XRD). The crack generation and the change of lattice constant were investigated under a uniaxial tensile strain at room temperature to explore the roles of He concentration and distribution played in the degradation of mechanical properties. The simulation results show that the expansion of the lattice constant decreases and the swelling rate increases while the He in the BCC region diffuses into the grain boundary (GB) region. The mechanical property of nanocrystalline BCC-Fe shows He concentration and distribution dependence, and the existence of He in GB is found to benefit the generation and growth of cracks and to affect the strength of GB during loading. It is observed that the reduction of tensile stress contributed by GB He is more obvious than that contributed by grain interior He.

scholarly journals X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates

2013 ◽  
Vol 46 (4) ◽  
pp. 868-873 ◽  
Author(s):  
Peter Zaumseil ◽  
Grzegorz Kozlowski ◽  
Yuji Yamamoto ◽  
Markus Andreas Schubert ◽  
Thomas Schroeder
Keyword(s):  
Tensile Strain ◽  
Chemical Vapour ◽  
Grazing Incidence ◽  
Silicon On Insulator ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Soi Substrates ◽  
Nanostructured Si

On the way to integrate lattice mismatched semiconductors on Si(001), the Ge/Si heterosystem was used as a case study for the concept of compliant substrate effects that offer the vision to be able to integrate defect-free alternative semiconductor structures on Si. Ge nanoclusters were selectively grown by chemical vapour deposition on Si nano-islands on silicon-on-insulator (SOI) substrates. The strain states of Ge clusters and Si islands were measured by grazing-incidence diffraction using a laboratory-based X-ray diffraction technique. A tensile strain of up to 0.5% was detected in the Si islands after direct Ge deposition. Using a thin (∼10 nm) SiGe buffer layer between Si and Ge the tensile strain increases to 1.8%. Transmission electron microscopy studies confirm the absence of a regular grid of misfit dislocations in such structures. This clear experimental evidence for the compliance of Si nano-islands on SOI substrates opens a new integration concept that is not only limited to Ge but also extendable to semiconductors like III–V and II–VI materials.

Biophysical contributions to membrance structure

1969 ◽  
Vol 2 (1) ◽  
pp. 1-23 ◽  
Author(s):  
J. B. Finean
Keyword(s):  
Additional Data ◽  
Structural Parameters ◽  
Resonance Absorption ◽  
Optical Rotatory Dispersion ◽  
Spectroscopic Techniques ◽  
X Ray Diffraction ◽  
X Ray ◽  
The Past ◽  
Direct Measurements ◽  
Molecular Components

Applications of physical techniques to studies of membrane structure have increased greatly in the past few years and they have begun to provide more precise structural parameters for membranes and also some indication of the physical states of the molecular constituents in the membranes. Direct measurements of membrane features have been made by electron microscopy and by X-ray diffraction methods. Spectroscopic techniques especially infrared absorption, nuclear magnetic resonance absorption and optical rotatory dispersion and circular dichroism measurements have provided additional data relating to the physical states of the molecular components in the membranes.

Grain Impingement and Intrinsic Stresses in CVD Diamond

1997 ◽  
Vol 505 ◽  
Author(s):  
S. Nijhawan ◽  
J. Rankin ◽  
B. L Walden ◽  
B. W. Sheldon
Keyword(s):  
Tensile Strain ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Intermediate Annealing ◽  
X Ray Diffraction ◽  
Entire Sample ◽  
X Ray ◽  
Pole Figures ◽  
Annealing Step ◽  
Film Microstructure

ABSTRACTIntrinsic stresses in polycrystalline CVD diamond films have been related to restructuring at grain boundaries. It is speculated that reducing the interfacial energy induces an elastic tensile strain. There appears to be a correlation between the evolution of macroscopic stresses in the entire sample and localized, non-homogeneous stresses in the microstructure based on Raman Spectroscopy and x-ray diffraction pole figures. A multistep processing sequence developed previously can help reduce these stresses substantially, by using an intermediate annealing step when the diamond grains are partially coalesced. Our results suggest that small changes in the film microstructure due to annealing can reduce both homogeneous and non-homogeneous stresses.

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