Silkworm Silk under Tensile Strain Investigated by Synchrotron X-ray Diffraction and Neutron Spectroscopy

2007 ◽  
Vol 40 (4) ◽  
pp. 1035-1042 ◽  
Author(s):  
Tilo Seydel ◽  
Klaas Kölln ◽  
Igor Krasnov ◽  
Imke Diddens ◽  
Nadine Hauptmann ◽  
...  
Keyword(s):  
Tensile Strain ◽  
Neutron Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Silkworm Silk

scholarly journals Simulation Study of Helium Effect on the Microstructure of Nanocrystalline Body-Centered Cubic Iron

Materials ◽  
2018 ◽  
Vol 12 (1) ◽  
pp. 91 ◽  
Author(s):  
Chunping Xu ◽  
Wenjun Wang
Keyword(s):  
Lattice Constant ◽  
Tensile Strain ◽  
Room Temperature ◽  
Md Simulation ◽  
Uniaxial Tensile ◽  
Body Centered Cubic ◽  
X Ray Diffraction ◽  
X Ray ◽  
Swelling Rate ◽  
Simulation Results

Helium (He) effect on the microstructure of nanocrystalline body-centered cubic iron (BCC-Fe) was studied through Molecular Dynamics (MD) simulation and simulated X-ray Diffraction (XRD). The crack generation and the change of lattice constant were investigated under a uniaxial tensile strain at room temperature to explore the roles of He concentration and distribution played in the degradation of mechanical properties. The simulation results show that the expansion of the lattice constant decreases and the swelling rate increases while the He in the BCC region diffuses into the grain boundary (GB) region. The mechanical property of nanocrystalline BCC-Fe shows He concentration and distribution dependence, and the existence of He in GB is found to benefit the generation and growth of cracks and to affect the strength of GB during loading. It is observed that the reduction of tensile stress contributed by GB He is more obvious than that contributed by grain interior He.

Direct measurements of compressive and tensile strain during shock breakout by use of subnanosecond x‐ray diffraction

1990 ◽  
Vol 68 (9) ◽  
pp. 4531-4534 ◽  
Author(s):  
J. S. Wark ◽  
D. Riley ◽  
N. C. Woolsey ◽  
G. Keihn ◽  
R. R. Whitlock
Keyword(s):  
Tensile Strain ◽  
X Ray Diffraction ◽  
X Ray ◽  
Direct Measurements

scholarly journals X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates

2013 ◽  
Vol 46 (4) ◽  
pp. 868-873 ◽  
Author(s):  
Peter Zaumseil ◽  
Grzegorz Kozlowski ◽  
Yuji Yamamoto ◽  
Markus Andreas Schubert ◽  
Thomas Schroeder
Keyword(s):  
Tensile Strain ◽  
Chemical Vapour ◽  
Grazing Incidence ◽  
Silicon On Insulator ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Soi Substrates ◽  
Nanostructured Si

On the way to integrate lattice mismatched semiconductors on Si(001), the Ge/Si heterosystem was used as a case study for the concept of compliant substrate effects that offer the vision to be able to integrate defect-free alternative semiconductor structures on Si. Ge nanoclusters were selectively grown by chemical vapour deposition on Si nano-islands on silicon-on-insulator (SOI) substrates. The strain states of Ge clusters and Si islands were measured by grazing-incidence diffraction using a laboratory-based X-ray diffraction technique. A tensile strain of up to 0.5% was detected in the Si islands after direct Ge deposition. Using a thin (∼10 nm) SiGe buffer layer between Si and Ge the tensile strain increases to 1.8%. Transmission electron microscopy studies confirm the absence of a regular grid of misfit dislocations in such structures. This clear experimental evidence for the compliance of Si nano-islands on SOI substrates opens a new integration concept that is not only limited to Ge but also extendable to semiconductors like III–V and II–VI materials.

Grain Impingement and Intrinsic Stresses in CVD Diamond

1997 ◽  
Vol 505 ◽  
Author(s):  
S. Nijhawan ◽  
J. Rankin ◽  
B. L Walden ◽  
B. W. Sheldon
Keyword(s):  
Tensile Strain ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Intermediate Annealing ◽  
X Ray Diffraction ◽  
Entire Sample ◽  
X Ray ◽  
Pole Figures ◽  
Annealing Step ◽  
Film Microstructure

ABSTRACTIntrinsic stresses in polycrystalline CVD diamond films have been related to restructuring at grain boundaries. It is speculated that reducing the interfacial energy induces an elastic tensile strain. There appears to be a correlation between the evolution of macroscopic stresses in the entire sample and localized, non-homogeneous stresses in the microstructure based on Raman Spectroscopy and x-ray diffraction pole figures. A multistep processing sequence developed previously can help reduce these stresses substantially, by using an intermediate annealing step when the diamond grains are partially coalesced. Our results suggest that small changes in the film microstructure due to annealing can reduce both homogeneous and non-homogeneous stresses.

scholarly journals In Situ Scanning X-Ray Diffraction Reveals Strain Variations in Electrochemically Grown Nanowires

2020 ◽  
Author(s):  
Alfred Larsson ◽  
Giuseppe abbondanza ◽  
lisa rämisch ◽  
weronica linpe ◽  
Dmitri Novikov ◽  
...  
Keyword(s):  
Tensile Strain ◽  
Growth Process ◽  
Spatial Information ◽  
Atomic Scale ◽  
Ex Situ ◽  
Magnetic Storage ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nanoporous Templates

<p><a>Templated electrochemical growth in nanoporous alumina can be used to fabricate nanowires with applications in magnetic storage devices, hydrogen sensors, and electrocatalysis. It is known that nanowires, grown in such templates, are strained. The strain in nanoscale materials can influence their performance in applications such as catalysts and electronic devices. However, it is not well established how the nanoporous template affects the lattice strain in the nanowires and how this develops during the growth process due to the lack of non-destructive <i>in situ </i>studies with spatial resolution. Here we have measured the strain and grain size of palladium nanowires in nanoporous templates during the growth process. For this we performed <i>in situ</i> scanning x-ray diffraction with a submicron focused x-ray beam. We found that there is a tensile strain in the nanowires and that it is more pronounced along the growth direction than in the confined direction of the templates. The tensile strain measured <i>in situ</i> is higher than previous <i>ex situ </i>reports, possibly due to hydrogen absorption during the growth. With the spatial information made possible with the focused synchrotron x-ray beam we could observe local variations in strain as a function of height. A region of local strain variation is found near the bottom of the nanowires where growth is initiated in branches at the pore bottoms. Knowledge of how nanoporous templates influence the strain of the nanowires may allow for atomic scale tailoring of the catalytic activity of such nanowires or minimizing strain to optimize electronic device performance. </a></p>

Mapping the Strain State of 3C-SiC/Si (001) Suspended Structures Using μ-XRD

2016 ◽  
Vol 858 ◽  
pp. 274-277 ◽  
Author(s):  
Gerard Colston ◽  
Stephen D. Rhead ◽  
Vishal Ajit Shah ◽  
Oliver J. Newell ◽  
Igor P. Dolbnya ◽  
...  
Keyword(s):  
Convenient Method ◽  
Residual Strain ◽  
Tensile Strain ◽  
Strain State ◽  
Strain Relaxation ◽  
Lattice Parameters ◽  
Raman Shift ◽  
X Ray Diffraction ◽  
X Ray ◽  
Direct Measurements

The residual strain has been mapped across suspended 3C-SiC membranes and wires using synchrotron based micro X-ray diffraction (μ-XRD). Residual tensile strain is observed to relax slightly upon suspension in both sets of structures. Similar maps were acquired by calculating the residual strain from the shift in 3C-SiC Raman peaks. Comparable trends in strain relaxation are observed by both methods, although the sensitivity of μ-XRD is higher using our measurement conditions. While Raman shift provides a fast and convenient method for mapping strain variations, it cannot give direct measurements of the lattice parameters that can be achieved with μ-XRD, making these techniques excellent complimentary methods of mapping residual strain in 3C-SiC.

scholarly journals Структурные характеристики выращенных методом RF-катодного напыления тонких пленок Sr-=SUB=-0.61-=/SUB=-Ba-=SUB=-0.39-=/SUB=-Nb-=SUB=-2-=/SUB=-O-=SUB=-6-=/SUB=-/ MgO(001)

2021 ◽  
Vol 63 (2) ◽  
pp. 250
Author(s):  
А.В. Павленко ◽  
Д.В. Стрюков ◽  
Л.И. Ивлева ◽  
А.П. Ковтун ◽  
К.М. Жидель ◽  
...  
Keyword(s):  
Thin Films ◽  
Tensile Strain ◽  
Cell Deformation ◽  
Interface Plane ◽  
Dielectric Measurements ◽  
X Ray Diffraction ◽  
Cathode Sputtering ◽  
X Ray ◽  
High Tunability ◽  
Barium Strontium

Thin films of the congruent composition of the barium-strontium niobates solid solutions Sr0.61Ba0.39Nb2O6 (SBN: 61) with thicknesses from 30 to 630 nm on a MgO (001) substrate were fabricated by RF-cathode sputtering in an oxygen atmosphere. By X-ray diffraction it was found that the films are epitaxial and there are no impurities in them. In the films, there is practically no unit cell deformation in the interface plane and tensile strain is present in the normal to the surface direction, which increases with decreasing film thickness. Dielectric measurements indicate high tunability in the films.

Titanium Nitride Epitaxy on Tungsten (100) by Sublimation Crystal Growth

2006 ◽  
Vol 955 ◽  
Author(s):  
Lisa Mercurio ◽  
James H. Edgar ◽  
Li Du ◽  
E. A. Kenik
Keyword(s):  
Thermal Expansion ◽  
Titanium Nitride ◽  
Tensile Strain ◽  
Coefficient Of Thermal Expansion ◽  
Nitride Powder ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electron Backscattering Diffraction ◽  
Unit Cells ◽  
Tungsten Foil

ABSTRACTTitanium nitride crystals were grown from titanium nitride powder on tungsten by the sublimation-recondensation technique. The bright golden TiN crystals displayed a variety of shapes including cubes, truncated tetrahedrons, truncated octahedrons, and tetrahedrons bounded by (111) and (100) crystal planes. The TiN crystals formed regular, repeated patterns within individual W grains that suggested epitaxy. X-ray diffraction and electron backscattering diffraction revealed that the tungsten foil was highly textured with a preferred foil normal of (100) and confirmed that the TiN particles deposited epitaxially with the orientation TiN(100)‖W(100) and TiN[100]‖W[110], that is, the unit cells of the TiN crystals were rotated 45° with respect to the tungsten. Because of its larger coefficient of thermal expansion compared to W, upon cooling from the growth temperature, the TiN crystals were under in-plane tensile strain, causing many of the TiN crystals to crack.

TEMPERATURE DEPENDENCE OF RELAXATION IN AlGaN/GaN HETEROSTRUCTURES

2007 ◽  
Vol 14 (04) ◽  
pp. 837-840
Author(s):  
Z. S. JIANG ◽  
W. ZHANG ◽  
Q. JI ◽  
J. XU ◽  
D. J. CHEN ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Tensile Strain ◽  
Lattice Strain ◽  
Passive Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Higher Temperature ◽  
The Difference ◽  
Increasing Temperature

Effects of Si 3 N 4 passivation layer on the lattice strain of Al 0.22 Ga 0.78 N layer with the thickness of 100 nm has been studied by in situ X-ray diffraction by the temperature range of 25°C–550°C. Results show that the temperature dependence of the strain relaxations can be separated into three linear regions. After passivation, an additional in-plane tensile strain is observed. The residual tensile strain increases with increasing temperature at low temperature, while at higher temperature the residual tensile strain decreases slightly. There is clear influence when a passive layer is deposited on the surface of the heterostructures. The linear regions in the temperature dependence of strain vary after the passive layer deposited on the heterostructure. These results indicate that the variation of the lattice strain relates to the difference in thermal stability between the epitaxy layer and the substrate.

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