Bias-Polarity-Dependent Photocurrent Spectra of Terahertz Stepped-Quantum-Well Photodetectors

2019 ◽  
Vol 12 (2) ◽  
Author(s):  
GuiXue Zhang ◽  
XuGuang Guo ◽  
HaiXia Wang ◽  
DiXiang Shao ◽  
ZhangLong Fu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Photocurrent Spectra

scholarly journals Photocurrent spectra of very long wavelength GaAs/AlGaAs quantum well infrared photodetector

2003 ◽  
Vol 52 (2) ◽  
pp. 503
Author(s):  
Yuan Xian-Zhang ◽  
Lu Wei ◽  
Li Ning ◽  
Chen Xiao-Shuang ◽  
Shen Xue-Chu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Photodetector ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetector ◽  
Photocurrent Spectra

Photocurrent spectra of heavily doped terahertz quantum well photodetectors

2010 ◽  
Vol 97 (2) ◽  
pp. 021114 ◽  
Author(s):  
X. G. Guo ◽  
R. Zhang ◽  
H. C. Liu ◽  
A. J. SpringThorpe ◽  
J. C. Cao
Keyword(s):  
Quantum Well ◽  
Heavily Doped ◽  
Photocurrent Spectra

GaAs/AlGaAs Intersubband MID-Infrared Emitter

1997 ◽  
Vol 484 ◽  
Author(s):  
G. Strasser ◽  
S. Gianordoli ◽  
L. Hvozdara ◽  
H. Bichl ◽  
K. Unterrainer ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Quantum Well ◽  
Material System ◽  
Mid Infrared ◽  
Quantum Well Structures ◽  
Emit Radiation ◽  
Infrared Emitter ◽  
Cladding Layers ◽  
Photocurrent Spectra

AbstractWe report here the growth and characterization of intersubband quantum well structures based on the GaAs/AlGaAs material system, designed to emit radiation at approximately 7 micrometers. We present transport behavior, infrared photocurrent spectra, and electroluminescence data. First attempts to fabricate a laser structure from this devices encountered difficulties with the electrical properties of the AIGaAs waveguide cladding layers. Thus, we present measurements with different waveguide concepts as doped AlAs cladding layers and doped superlattice cladding structures.

scholarly journals Enhancement of photoconductivity by carrier screening effect in n-GaSb/n-InAs/p-GaSb heterostructure with single deep quantum well

2018 ◽  
Vol 52 (4) ◽  
pp. 476
Author(s):  
L.V. Danilov ◽  
M.P. Mikhailova ◽  
R.V. Levin ◽  
G.G. Konovalov ◽  
E.V. Ivanov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Applied Voltage ◽  
Reverse Bias ◽  
Carrier Screening ◽  
Screening Effect ◽  
First Time ◽  
Photocurrent Spectra

Abstractn -GaSb/ n -InAs/ p -GaSb heterostructure with a single InAs QW was grown for the first time by MOVPE. Photocurrent spectra were obtained at reverse bias in the range from 0 to 0.8 V. It was shown that the photocurrent increases nonlinearly. The maximum of differential photoconductivity is archived at low applied voltage up to 0.2 V. This effect was explained by electrostatic screening of electrons localized in QW.

Investigation of local photocurrent spectra in InAs/GaAs quantum dot and quantum well heterostructures

2001 ◽  
Author(s):  
Vladimir Y. Aleshkin ◽  
Aleksandr V. Biryukov ◽  
Sergey V. Gaponov ◽  
V. M. Daniltsev ◽  
V. L. Mironov ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Gaas Quantum Dot ◽  
Photocurrent Spectra
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