GaAs/AlGaAs Intersubband MID-Infrared Emitter

1997 ◽  
Vol 484 ◽  
Author(s):  
G. Strasser ◽  
S. Gianordoli ◽  
L. Hvozdara ◽  
H. Bichl ◽  
K. Unterrainer ◽  
...  

AbstractWe report here the growth and characterization of intersubband quantum well structures based on the GaAs/AlGaAs material system, designed to emit radiation at approximately 7 micrometers. We present transport behavior, infrared photocurrent spectra, and electroluminescence data. First attempts to fabricate a laser structure from this devices encountered difficulties with the electrical properties of the AIGaAs waveguide cladding layers. Thus, we present measurements with different waveguide concepts as doped AlAs cladding layers and doped superlattice cladding structures.

2016 ◽  
Vol 109 (12) ◽  
pp. 122102 ◽  
Author(s):  
Y. Gu ◽  
Y. G. Zhang ◽  
X. Y. Chen ◽  
Y. J. Ma ◽  
S. P. Xi ◽  
...  

1993 ◽  
Vol 73 (12) ◽  
pp. 8489-8494 ◽  
Author(s):  
J. M. Zavada ◽  
F. Voillot ◽  
N. Lauret ◽  
R. G. Wilson ◽  
B. Theys

1997 ◽  
Vol 81 (1) ◽  
pp. 390-393 ◽  
Author(s):  
Kushant Uppal ◽  
Denis Tishinin ◽  
P. D. Dapkus

2019 ◽  
Vol 53 (14) ◽  
pp. 1914-1917 ◽  
Author(s):  
L. I. Goray ◽  
E. V. Pirogov ◽  
E. V. Nikitina ◽  
E. V. Ubyivovk ◽  
L. G. Gerchikov ◽  
...  

2000 ◽  
Vol 39 (Part 1, No. 10) ◽  
pp. 5781-5787 ◽  
Author(s):  
Kestutis Jarasiunas ◽  
Vygantas Mizeikis ◽  
Satoshi Iwamoto ◽  
Masao Nishioka ◽  
Takao Someya ◽  
...  

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