Molecular‐beam epitaxy of strained silicon germanium/silicon structures

1992 ◽  
Vol 10 (4) ◽  
pp. 1927-1934 ◽  
Author(s):  
E. Kasper ◽  
H. Jorke
Keyword(s):  
Molecular Beam Epitaxy ◽  
Silicon Germanium ◽  
Molecular Beam ◽  
Strained Silicon ◽  
Silicon Structures ◽  
Germanium Silicon

Piezoresistance in Strained Silicon and Strained Silicon Germanium

2006 ◽  
Vol 958 ◽  
Author(s):  
Jacob Richter ◽  
M. B. Arnoldus ◽  
J. Lundsgaard Hansen ◽  
A. Nylandsted Larsen ◽  
O. Hansen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Silicon Germanium ◽  
Molecular Beam ◽  
Silicon Crystal ◽  
Experimental Results ◽  
Strained Silicon ◽  
Silicon Substrates ◽  
Temperature Dependency ◽  
Strained Layer

ABSTRACTThis paper presents experimental results of the piezoresistance in p-type tensile strained silicon and compressive strained silicon germanium grown by molecular beam epitaxy (MBE) on (001) silicon substrates. The piezoresistance decreases in a tensile strained layer and increases in a compressive strained layer when compared to the unstrained material. The results show that one can tune the piezoresistance by tuning the strain in the piezoresistor and thus tailor the performance of the device. The obtained results show an increase in the piezoresistance effect of 35% in compressive strained silicon germanium and a decrease in the piezoresistance effect in tensile strained silicon of 24%. Furthermore, the results show that the piezoresistance of a tensile strained silicon crystal has a smaller temperature dependency compared to that of unstrained silicon. The piezoresistance effect decreases by 7% in tensile strained silicon compared to the piezoresistance effect decrease in silicon of 18% when changing the temperature from 30°C to 80°C.

Impact of Buffered Layer Growth Conditions on Grown-In Vacancy Concentrations in Molecular Beam Epitaxy Silicon Germanium

2004 ◽  
Vol 809 ◽  
Author(s):  
Kareem M. Shoukri ◽  
Yaser M. Haddara ◽  
Andrew P. Knights ◽  
Paul G. Coleman ◽  
Mohammad M. Rahman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Point Defects ◽  
Growth Temperature ◽  
Silicon Germanium ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Layer Growth ◽  
Vacancy Clusters ◽  
Temperature And Growth

ABSTRACTSilicon-Germanium (SiGe) has become increasingly attractive to semiconductor manufacturers over the last decade for use in high performance devices. In order to produce thin layers of device grade SiGe with low concentrations of point defects and well-controlled doping profiles, advanced growth and deposition techniques such as molecular beam epitaxy (MBE) are used. One of the key issues in modeling dopant diffusion during subsequent processing is the concentration of grown-in point defects. The incorporation of vacancy clusters and vacancy point defects in 200nm SiGe/Si layers grown by molecular beam epitaxy over different buffer layers has been observed using beam-based positron annihilation spectroscopy. Variables included the type of buffer layer, the growth temperature and growth rate for the buffer, and the growth temperature and growth rate for the top layer. Different growth conditions resulted in different relaxation amounts in the top layer, but in all samples the dislocation density was below 106 cm−2. Preliminary results indicate a correlation between the size, type and concentration of vacancy defects and the buffer layer growth temperature. At high buffer layer growth temperature of 500°C the vacancy point defect concentration is below the PAS detectable limit of approximately 1015 cm−3. As the buffer layer growth is decreased to a minimum value of 300°C, large vacancy clusters are observed in the buffered layer and vacancy point defects are observed in the SiGe film. These results are relevant to the role played by point defects grown-in at temperatures below ∼350°C in modeling dopant diffusion during processing.

Peculiarities of photoluminescence of erbium in silicon structures prepared by the sublimation molecular-beam epitaxy method

2001 ◽  
Vol 43 (6) ◽  
pp. 1012-1017 ◽  
Author(s):  
B. A. Andreev ◽  
Z. F. Krasil’nik ◽  
V. P. Kuznetsov ◽  
A. O. Soldatkin ◽  
M. S. Bresler ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Method ◽  
Silicon Structures

Tunneling current spectroscopy of electron subbands inn‐type δ‐doped silicon structures grown by molecular beam epitaxy

1990 ◽  
Vol 67 (4) ◽  
pp. 1962-1968 ◽  
Author(s):  
Hui‐Min Li ◽  
Karl‐Fredrik Berggren ◽  
Wei‐Xin Ni ◽  
Bo E. Sernelius ◽  
Magnus Willander ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Tunneling Current ◽  
Doped Silicon ◽  
Silicon Structures

Investigation of minute strain in silicon on insulator and strained-silicon/silicon–germanium/silicon-substrate semiconductor materials using a synchrotron radiation X-ray microbeam

2011 ◽  
Vol 1 (SRMS-7) ◽  
Author(s):  
J. Matsui ◽  
Y. Tsusaka ◽  
H. Takano ◽  
Y. Kagoshima ◽  
T. Senda ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Local Strain ◽  
Sample Surface ◽  
Lattice Parameter ◽  
Silicon On Insulator ◽  
Strained Silicon ◽  
Parameter Distribution ◽  
X Ray ◽  
Points Of View ◽  
Germanium Silicon

Strain in silicon on insulator (SOI) and strained-silicon(s-Si)/silicon–germanium (SiGe)/Si-substrate crystals is analysed by means of synchrotron X-ray microbeam diffraction. It is found that strain features of the s-Si/SiGe/Si crystals are much different from those of SOI crystals from the lattice tilt and lattice parameter distribution points of view. The two-dimensional lattice tilt maps obtained by scanning the synchrotron X-ray microbeam of about 1 μm in size on the sample surface are useful to study local strain distribution in those materials.

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