Growth of a delta‐doped silicon layer by molecular beam epitaxy on a charge‐coupled device for reflection‐limited ultraviolet quantum efficiency

1992 ◽  
Vol 61 (9) ◽  
pp. 1084-1086 ◽  
Author(s):  
Michael E. Hoenk ◽  
Paula J. Grunthaner ◽  
Frank J. Grunthaner ◽  
R. W. Terhune ◽  
Masoud Fattahi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Efficiency ◽  
Molecular Beam ◽  
Silicon Layer ◽  
Charge Coupled Device ◽  
Doped Silicon ◽  
A Charge

Measurement of quantum efficiency of a charge coupled device

1998 ◽  
Vol 69 (11) ◽  
pp. 3746-3750 ◽  
Author(s):  
K. Hashimotodani ◽  
T. Toneri ◽  
S. Kitamoto ◽  
H. Tsunemi ◽  
K. Hayashida ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Charge Coupled Device ◽  
A Charge

The electrical properties of doped silicon, grown by Molecular-Beam-Epitaxy (MBE)

1987 ◽  
Vol 42 (3) ◽  
pp. 197-200 ◽  
Author(s):  
R. A. A. Kubiak ◽  
S. M. Newstead ◽  
W. Y. Leong ◽  
R. Houghton ◽  
E. H. C. Parker ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Doped Silicon

Tunneling current spectroscopy of electron subbands inn‐type δ‐doped silicon structures grown by molecular beam epitaxy

1990 ◽  
Vol 67 (4) ◽  
pp. 1962-1968 ◽  
Author(s):  
Hui‐Min Li ◽  
Karl‐Fredrik Berggren ◽  
Wei‐Xin Ni ◽  
Bo E. Sernelius ◽  
Magnus Willander ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Tunneling Current ◽  
Doped Silicon ◽  
Silicon Structures
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