Resolution improvement for linear image sensors using indium‐tin‐oxide/amorphous silicon junctions

1990 ◽  
Vol 67 (4) ◽  
pp. 2143-2147
Author(s):  
Y. Mishima ◽  
N. Kondo ◽  
T. Kimura ◽  
S. Soeda ◽  
Y. Nagahiro ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Image Sensors ◽  
Resolution Improvement

Optimization of indium tin oxide by pulsed DC power on single junction amorphous silicon solar cells

2011 ◽  
Vol 519 (18) ◽  
pp. 6053-6058 ◽  
Author(s):  
Rebecca K. Carlson ◽  
Yunsic Shim ◽  
William B. Ingler
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Silicon Solar Cells ◽  
Single Junction ◽  
Dc Power ◽  
Pulsed Dc

Amorphous silicon on indium tin oxide: a transparent electrode for simultaneous light activated electrochemistry and optical microscopy

2019 ◽  
Vol 55 (1) ◽  
pp. 123-126 ◽  
Author(s):  
Jiaxin Lian ◽  
Ying Yang ◽  
Wenqian Wang ◽  
Stephen G. Parker ◽  
Vinicius R. Gonçales ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Optical Microscopy ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Transparent Electrode ◽  
Microscopy Imaging ◽  
Optical Microscopy Imaging

A transparent electrode which is able to perform simultaneous photoswitchable electrochemistry and optical microscopy imaging.

Semitransparent Silicide Electrode Formed on the Surface of a-Si:H

1984 ◽  
Vol 33 ◽  
Author(s):  
T. Tsukada ◽  
K. Seki ◽  
H. Yamamoto ◽  
A. Sasano
Keyword(s):  
Amorphous Silicon ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Metal Layer ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Layer ◽  
Transparent Electrode ◽  
Optical And Electrical Properties ◽  
Silicide Layer ◽  
Hydrogenated Amorphous

ABSTRACTThin silicide layers are found to be formed through solid state reaction between hydrogenated amorphous silicon(a-Si:H) and metals. The method of formation of the silicide layer is very simple: deposition of metal on top of amorphous silicon layer and annealing and etching of the residual metal layer. The reaction kinetics and properties of this layer are described. The thickness of this silicide layer is estimated to be 5 nm. Accordingly, it can be used as a transparent electrode in a-Si:H photodiodes. Photodiodes using this semitransparent electrode have as good optical and electrical properties as conventional a-Si:H photodiodes using ITO(indium tin oxide). Schottky barrier characteristics are also de-scribed.

Amorphous silicon waveguides grown by PECVD on an Indium Tin Oxide buried contact

2012 ◽  
Vol 285 (13-14) ◽  
pp. 3088-3092 ◽  
Author(s):  
Sandro Rao ◽  
Francesco G. Della Corte ◽  
Caterina Summonte
Keyword(s):  
Amorphous Silicon ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Silicon Waveguides
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