Indium tin oxide sputtering damage to catalytic chemical vapor deposited amorphous silicon passivation films and its recovery

2017 ◽  
Vol 635 ◽  
pp. 73-77 ◽  
Author(s):  
Takeo Konishi ◽  
Keisuke Ohdaira
Keyword(s):  
Amorphous Silicon ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

Characteristics of Carbon Nanowalls According to the Indium Tin Oxide Interlayer Thickness

2020 ◽  
Vol 12 (8) ◽  
pp. 1261-1264
Author(s):  
Hyeokjoo Choi ◽  
Chiwon Choi ◽  
Seok Hun Kwon ◽  
Young Park ◽  
Wonseok Choi
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Chemical Vapor ◽  
Rf Magnetron Sputtering ◽  
Adhesive Force ◽  
Limited Range ◽  
Interlayer Thickness ◽  
Washing Machine ◽  
Carbon Nanowalls ◽  
Contact Angle Analysis

Materials with low adhesion have a limited range of applications. To solve this problem, the stress can be alleviated by inserting an interlayer between the substrate and the semiconductor material. As such, the adhesion can also be improved by depositing an interlayer between the carbon nanowall (CNW) with a low adhesive force and the substrate. In this study, indium tin oxide (ITO), whose thickness was controlled via radio frequency (RF) magnetron sputtering on the substrate, was used as an interlayer, and CNWs were grown using microwaveplasma-enhanced chemical vapor deposition (MPECVD) with a mixture of methane (CH4) and hydrogen (H2) gases. To confirm the adhesion between the CNWs and the substrate according to the thickness of the ITO interlayer, the dissociation of the CNWs was confirmed using an ultrasonic washing machine. Hall measurement was used to investigate the electrical properties. Afterwards, to analyze the change in the surface structure, contact angle analysis and field emission scanning electron microscopy (FESEM) analysis performed.

Characterization of Chemical-Vapor-Deposited Amorphous-Silicon Films

1993 ◽  
Vol 32 (Part 2, No.1A/B) ◽  
pp. L20-L23 ◽  
Author(s):  
Toshiaki Shiraiwa ◽  
Osamu Sugiura ◽  
Hiroshi Kanoh ◽  
Norihito Asai ◽  
Koh-ichi Usami ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Chemical Vapor Deposited

Hydrogen-Radical Annealing of Chemical Vapor-Deposited Amorphous Silicon Films

1990 ◽  
Vol 29 (Part 2, No. 12) ◽  
pp. L2171-L2173 ◽  
Author(s):  
Yasutaka Uchida ◽  
Hiroshi Kanoh ◽  
Osamu Sugiura ◽  
Masakiyo Matsumura
Keyword(s):  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Chemical Vapor Deposited ◽  
Hydrogen Radical

Resolution improvement for linear image sensors using indium‐tin‐oxide/amorphous silicon junctions

1990 ◽  
Vol 67 (4) ◽  
pp. 2143-2147
Author(s):  
Y. Mishima ◽  
N. Kondo ◽  
T. Kimura ◽  
S. Soeda ◽  
Y. Nagahiro ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Image Sensors ◽  
Resolution Improvement
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