Thin Nitride Films: Pushing the Limits Using Rapid Thermal Processing

1996 ◽  
Vol 429 ◽  
Author(s):  
S. J. DeBoer ◽  
R. P. S. Thakur
Keyword(s):  
Silicon Nitride ◽  
Electrical Properties ◽  
Thermal Processing ◽  
Dielectric Material ◽  
Rapid Thermal Processing ◽  
Semiconductor Processing ◽  
Nucleation Behavior ◽  
Silicon Nitride Films ◽  
Current Reduction ◽  
Almost All

AbstractSilicon nitride, a celebrated dielectric material in semiconductor processing, is used extensively in almost all of today's key technologies (DRAM, microprocessor, SRAM, Flash memories, etc.). The physical and electrical properties of this material are well understood, and integration of silicon nitride in a given process is simple. As a result of these benefits, alternate dielectric material technologies have found limited acceptance. As feature sizes shrink, the formation of reliable thin nitride films is critical and the performance of these nitride films is very dependent on the technology used for their preparation. In this paper, we show that an incremental and overall improvement in the physical and electrical properties of nitride films can be attained by using rapid thermal processing technology.We present the nucleation behavior of the <100 Å nitride films on polysilicon surfaces. We investigate the integrity of these films as a function of predeposition environment and discuss the oxidation and punch-through resistance of cluster tool-deposited films. The results of our studies of the conduction mechanism in thin silicon nitride films and scaling limits for these films are shown. We also discuss the structural and electrical changes these films undergo during the subsequent reoxidation process performed for leakage current reduction.

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

2011 ◽  
Vol 178-179 ◽  
pp. 249-252 ◽  
Author(s):  
Xiang Yang Ma ◽  
Li Ming Fu ◽  
De Ren Yang
Keyword(s):  
Silicon Nitride ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Silicon Nitride Films ◽  
Oxygen Precipitation ◽  
Different Temperatures ◽  
Nitrogen Bonds ◽  
Sinx Film

Oxygen precipitation (OP) behaviors were investigated for Czochralski (Cz) silicon wafers, which were coated with silicon nitride (SiNx) films or not, subjected to two-step anneal of 800C/4 h+1000°C/16 h following rapid thermal processing (RTP) at different temperatures ranging from 1150 to 1250C for 50 s. It was found that OP in the Cz silicon wafers coated with SiNx films was stronger in each case. This was because that nitrogen atoms diffused into bulk of Cz silicon wafer from the surface coated SiNx film during the high temperature RTP. Furthermore, it was proved that the RTP lamp irradiation facilitated the in-diffusion of nitrogen atoms, which was most likely due to that the ultraviolet light enhanced the breakage of silicon-nitrogen bonds.

Electrical properties of thin SiO2 films nitrided in N2O by rapid thermal processing

1992 ◽  
Vol 19 (1-4) ◽  
pp. 657-660
Author(s):  
M. Severi ◽  
G. Mattei ◽  
L. Dori ◽  
P. Maccagnani ◽  
G.L. Baldini ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Sio2 Films

Electrical properties of silicon nitride films plasma‐deposited from SiF4, N2, and H2 source gases

1985 ◽  
Vol 57 (2) ◽  
pp. 426-431 ◽  
Author(s):  
Shizuo Fujita ◽  
Toshiyuki Ohishi ◽  
Hideo Toyoshima ◽  
Akio Sasaki
Keyword(s):  
Silicon Nitride ◽  
Electrical Properties ◽  
Silicon Nitride Films

Optical and Electrical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD systems

1986 ◽  
Vol 68 ◽  
Author(s):  
Nancy Voke ◽  
Jerzy Kanicki
Keyword(s):  
Silicon Nitride ◽  
Electrical Properties ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Optical And Electrical Properties ◽  
Amorphous Silicon Nitride ◽  
Full Characterization ◽  
Silicon Nitride Films ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon nitride films, prepared in various commercially available plasma enhanced chemical vapor deposition systems, have been investigated in terms of different deposition conditions.The full characterization of these gate insulators has been carried out by different techniques.Experimental data and interesting findings obtained from this study are presented.Special attention has been devoted to the influence of hydrogen on optical and electrical properties.

Nitrogen-Atom Bonding at Sio2/SI Interfaces in Metalinsulator-Semiconductor (MIS) Stacked Gates Made by Integration of Plasma Assisted Oxidation-Deposition and Rapid Thermal Processing

1993 ◽  
Vol 303 ◽  
Author(s):  
Y. Ma ◽  
T. YAsuda ◽  
G. Lucovsky
Keyword(s):  
Electrical Properties ◽  
Thermal Processing ◽  
High Frequency ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Rapid Thermal Processing ◽  
Atom Concentration ◽  
Bonding Structure ◽  
Static Capacitance ◽  
Capacitance Voltage

ABSTRACTSiO2 thin films were deposited by remote PECVD on Si surfaces exposed to species generated in O2/N2 and O2/NH3 plasmas. The surface chemistry was studied by Auger Electron Spectroscopy, AES, and the electrical properties of the SiO2/Si interface by high frequency and quasi-static Capacitance-Voltage, C-V, measurements. The AES results showed that Ccontamination was removed by exposure to both plasma-excited gas mixtures, but that N-atoms were incorporated into the SiO2 film, and Si-N bonds were formed at the SiO2/Si interface. C-V measurements indicated that the Si-N bonding structure, rather than the N-atom concentration, is critical in determining the interface electrical properties. The effects of Rapid Thermal Annealing, RTA, on the electrical properties of these SiO2/Si interfaces were also studied.

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