Critical layer thickness for misfit dislocation stability in multilayer structures

1990 ◽  
Vol 67 (7) ◽  
pp. 3343-3349 ◽  
Author(s):  
J. P. Hirth ◽  
Xiaoxin Feng
Keyword(s):  
Layer Thickness ◽  
Misfit Dislocation ◽  
Critical Layer ◽  
Multilayer Structures ◽  
Critical Layer Thickness

Modulation Structure and Superhardness Effect of VC/TiN Nano-Multilayer Films

2012 ◽  
Vol 184-185 ◽  
pp. 1080-1083
Author(s):  
Jian Ling Yue ◽  
Wei Shi ◽  
Ge Yang Li
Keyword(s):  
Elastic Modulus ◽  
Magnetron Sputtering ◽  
Layer Thickness ◽  
Coherent Structure ◽  
Multilayer Films ◽  
Critical Layer ◽  
Maximum Hardness ◽  
Critical Layer Thickness ◽  
The Relationship

A series of VC/TiN nano-multilayer films with various TiN layer thicknesses were synthesized by magnetron sputtering method. The relationship between the modulation structure and superhardness effect of the multilayer films were investigated. The results reveal that TiN below a critical layer thickness grows coherently with VC layers in multilayers. Correspondingly, the hardness and elastic modulus of the multilayers increase significantly. The maximum hardness and modulus achieved in these multilayers is 40.7GPa and 328GPa.With further increase in the TiN layer thickness, coherent structure of multilayers are destroyed, resulting in a remarkable decrease of hardness and modulus. The superhardness effect of multilayers is related to the three directional strains generated from the coherent structure.

Indium incorporation efficiency and critical layer thickness of (202¯1) InGaN layers on GaN

2012 ◽  
Vol 101 (20) ◽  
pp. 202102 ◽  
Author(s):  
Simon Ploch ◽  
Tim Wernicke ◽  
Martin Frentrup ◽  
Markus Pristovsek ◽  
Markus Weyers ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Critical Layer ◽  
Critical Layer Thickness ◽  
Incorporation Efficiency

Critical Layer Thickness: Theory and Experiment in the ZnSe/GaAs (001) Material System

2017 ◽  
Vol 26 (03) ◽  
pp. 1740020
Author(s):  
Tedi Kujofsa ◽  
John E. Ayers
Keyword(s):  
Layer Thickness ◽  
Flow Model ◽  
Driving Forces ◽  
Lattice Relaxation ◽  
Theoretical Models ◽  
Critical Layer ◽  
Material System ◽  
Critical Layer Thickness ◽  
Experimental Resolution ◽  
Experimental Strain

The critical layer thickness (CLT) determines the criteria for dislocation formation and the onset of lattice relaxation. Although several theoretical models have been developed for the critical layer thickness, experimentally-measured CLTs in ZnSe/GaAs (001) heterostructures are often at variance with one another as well as with established theories. In a previous work [T. Kujofsa et al., J. Vac. Sci. Technol. B, 34, 051201 (2016)], we showed that the experimentally measured CLT may be much larger than the equilibrium value when using finite experimental resolution. In this work, we apply a general dislocation flow model to determine the apparent critical layer thickness as a function of the experimental resolution for ZnSe/GaAs (001) heterostructures. More importantly, we compare the results utilizing different equilibrium theories and therefore varying driving forces for the lattice relaxation in order to determine which established models are consistent with several measured values of CLT for ZnSe/GaAs (001) once kinetically-limited relaxation and finite experimental strain resolution are taken into account.

Critical layer thickness determination of GaN/InGaN/GaN double heterostructures

2000 ◽  
Vol 77 (25) ◽  
pp. 4121-4123 ◽  
Author(s):  
M. J. Reed ◽  
N. A. El-Masry ◽  
C. A. Parker ◽  
J. C. Roberts ◽  
S. M. Bedair
Keyword(s):  
Layer Thickness ◽  
Critical Layer ◽  
Critical Layer Thickness ◽  
Thickness Determination ◽  
Double Heterostructures
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