scholarly journals Variable angle of incidence analysis of magneto‐optic multilayers

1990 ◽  
Vol 67 (9) ◽  
pp. 4801-4802 ◽  
Author(s):  
William A. McGahan ◽  
Liang‐Yao Chen ◽  
John A. Woollam
1986 ◽  
Vol 77 ◽  
Author(s):  
P. G. Snyder ◽  
J. E. Oh ◽  
J. A. Woollam

ABSTRACTIt has been shown recently that variable angle of incidence spectroscopie ellipsometry (VASE) is a sensitive technique for determining semiconductor multilayer model parameters, e.g. layer thicknesses and ternary compositions. In this paper we show that VASE is, in addition, sensitive to the Franz-Keldysh effect induced by band bending in the barrier layer of a GaAs-AlGaAs-GaAs (MODFET) structure. VASE measurements differ from electro-reflectance and photoreflectance, in that the internal heterojunction region electric field is directly probed, without the application of a modulating field. The Franz-Keldysh effect appears in the VASE spectra near the AlGaAs bandgap energy. Data for two samples, with different doping profiles, are quantitatively modeled to determine the internal electric field amplitudes.


1969 ◽  
Vol 8 (12) ◽  
pp. 2537 ◽  
Author(s):  
P. Bogen ◽  
H. Conrads ◽  
G. Gatti ◽  
W. Kohlhaas

2010 ◽  
Vol 49 (16) ◽  
pp. 3231 ◽  
Author(s):  
Lionel R. Watkins ◽  
Sophie S. Shamailov

1995 ◽  
Vol 34 (4) ◽  
pp. 695 ◽  
Author(s):  
S. Gil ◽  
G. A. Clarke ◽  
L. McGarry ◽  
C. E. Waltham

1987 ◽  
Vol 102 ◽  
Author(s):  
P. G. Snyder ◽  
K. G. Merkel ◽  
B. N. De ◽  
J. A. Woollam ◽  
D. W. Langer ◽  
...  

ABSTRACTVariable Angle of incidence Spectroscopic Ellipsometry (VASE) is a sensitive, nondestructive method of determining optical constants, layer thicknesses, alloy compositions and other parameters. We model the VASE data for a sample containing a 20 period Al0 5Ga0 5As-GaAs superlattice, to obtain the effective index of refraction (n) and e tinction coefficient (k) of the superlattice layer. The room temperature VASE spectra contain strong, sharp features at the e-hh(1), e-lh(1) and e-hh(2) excitonic tran-sition energies. In addition, VASE was used to characterize more compli-cated layered structures, which also contained superlattices.


2000 ◽  
Vol 338-342 ◽  
pp. 575-578 ◽  
Author(s):  
O.P. Alexander Lindquist ◽  
H. Arwin ◽  
Urban Forsberg ◽  
Peder Bergman ◽  
K. Järrendahl

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