Optical‐ and magneto‐optical measurements using a variable angle of incidence spectroscopic ellipsometer: Application to DyCo multilayers

1989 ◽  
Vol 7 (3) ◽  
pp. 1271-1272 ◽  
Author(s):  
William A. McGahan ◽  
Z. S. Shan ◽  
Alan M. Massengale ◽  
Thomas E. Tiwald ◽  
John A. Woollam
1986 ◽  
Vol 77 ◽  
Author(s):  
P. G. Snyder ◽  
J. E. Oh ◽  
J. A. Woollam

ABSTRACTIt has been shown recently that variable angle of incidence spectroscopie ellipsometry (VASE) is a sensitive technique for determining semiconductor multilayer model parameters, e.g. layer thicknesses and ternary compositions. In this paper we show that VASE is, in addition, sensitive to the Franz-Keldysh effect induced by band bending in the barrier layer of a GaAs-AlGaAs-GaAs (MODFET) structure. VASE measurements differ from electro-reflectance and photoreflectance, in that the internal heterojunction region electric field is directly probed, without the application of a modulating field. The Franz-Keldysh effect appears in the VASE spectra near the AlGaAs bandgap energy. Data for two samples, with different doping profiles, are quantitatively modeled to determine the internal electric field amplitudes.


1969 ◽  
Vol 8 (12) ◽  
pp. 2537 ◽  
Author(s):  
P. Bogen ◽  
H. Conrads ◽  
G. Gatti ◽  
W. Kohlhaas

2010 ◽  
Vol 49 (16) ◽  
pp. 3231 ◽  
Author(s):  
Lionel R. Watkins ◽  
Sophie S. Shamailov

1995 ◽  
Vol 34 (4) ◽  
pp. 695 ◽  
Author(s):  
S. Gil ◽  
G. A. Clarke ◽  
L. McGarry ◽  
C. E. Waltham

2011 ◽  
Vol 1321 ◽  
Author(s):  
A. Nemeth ◽  
D. Attygalle ◽  
L. R. Dahal ◽  
P. Aryal ◽  
Z. Huang ◽  
...  

ABSTRACTA prototype expanded-beam spectroscopic ellipsometer has been developed that uses uncollimated (non-parallel, diffuse) illumination with a detection system consisting of an angle-of-incidence-sensitive pinhole camera for high-speed, large-area imaging/mapping applications. The performance of this novel instrument is being tested for imaging/mapping of mixed-phase hydrogenated silicon films having graded amorphous (a-Si:H) and nanocrystalline (nc-Si:H) components throughout the film depth. The speed of the measurement system makes the instrument suitable for use on production lines. The precision enables detection of subnanometer thicknesses, and refractive index and extinction coefficient changes of 0.01. Angle-of-incidence and mirror calibrations are made via well-known sample structures. Alternative commercial instrumentation for mapping by spectroscopic ellipsometry must translate the sample or ellipsometer in two dimensions. For this instrumentation, even a 15 × 15 cm2 sample with cm2 resolution requires > 200 measurements and at least 15 min. By imaging along one dimension in parallel, the expanded-beam system can measure with similar resolution in < 2 min. The focus of recent instrumentation efforts is on improving the overall system spectral range and its performance.


2000 ◽  
Vol 71 (7) ◽  
pp. 2677-2683 ◽  
Author(s):  
Guo-Qiang Xia ◽  
Rong-Jun Zhang ◽  
Yu-Li Chen ◽  
Hai-Bing Zhao ◽  
Song-You Wang ◽  
...  

1990 ◽  
Vol 67 (9) ◽  
pp. 4801-4802 ◽  
Author(s):  
William A. McGahan ◽  
Liang‐Yao Chen ◽  
John A. Woollam

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