Kinetics of Ta ions penetration into porous low-k dielectrics under bias-temperature stress

2010 ◽  
Vol 96 (22) ◽  
pp. 222901 ◽  
Author(s):  
Ming He ◽  
Ya Ou ◽  
Pei-I Wang ◽  
Toh-Ming Lu
Keyword(s):  
Temperature Stress ◽  
Bias Temperature Stress ◽  
Low K ◽  
Kinetics Of

Effects of vacuum-ultraviolet irradiation on copper penetration into low-k dielectrics under bias-temperature stress

2015 ◽  
Vol 106 (1) ◽  
pp. 012904 ◽  
Author(s):  
X. Guo ◽  
S. W. King ◽  
H. Zheng ◽  
P. Xue ◽  
Y. Nishi ◽  
...  
Keyword(s):  
Temperature Stress ◽  
Ultraviolet Irradiation ◽  
Vacuum Ultraviolet ◽  
Bias Temperature Stress ◽  
Low K

Cu penetration into low-k dielectric during deposition and bias-temperature stress

2010 ◽  
Vol 97 (25) ◽  
pp. 252901 ◽  
Author(s):  
Ming He ◽  
Steven Novak ◽  
Lakshmanan Vanamurthy ◽  
Hassaram Bakhru ◽  
Joel Plawsky ◽  
...  
Keyword(s):  
Temperature Stress ◽  
Bias Temperature Stress ◽  
Low K

Bias-temperature stress of Al on porous low-k dielectrics

2011 ◽  
Vol 51 (8) ◽  
pp. 1342-1345 ◽  
Author(s):  
Ming He ◽  
Huafang Li ◽  
Pei-I Wang ◽  
Toh-Ming Lu
Keyword(s):  
Temperature Stress ◽  
Bias Temperature Stress ◽  
Low K

Barrier Metal Ions Drift into Porous Low k Dielectrics under Bias-Temperature stress

2010 ◽  
Vol 1249 ◽  
Author(s):  
Ming He ◽  
Ya Ou ◽  
Pei-I Wang ◽  
Lakshmanan H Vanamurthy ◽  
Hassaram Bakhru ◽  
...  
Keyword(s):  
Temperature Stress ◽  
Secondary Ion Mass Spectrometry ◽  
Voltage Shift ◽  
Interlayer Dielectric ◽  
Flatband Voltage ◽  
Bias Temperature Stress ◽  
Low K ◽  
Moderate Bias ◽  
Secondary Ion ◽  
Profile Technique

AbstractTa family has been used as barrier to prevent Cu diffusion into interlayer dielectric in IC applications. Recent experiments demonstrated a more severe flatband voltage shift (ΔVFB) occurred for Ta/porous low k dielectrics/Si capacitors compared to that of Cu/porous low k dielectrics/Si capacitors after a moderate bias temperature stress (BTS). The flatband voltage shift under BTS was interpreted as the penetration of Ta ions into porous low k dielectrics. However, this interpretation has been under debate. In this paper, by using Secondary Ion Mass Spectrometry (SIMS) backside sputter depth profile technique, we report a direct evidence of Ta ions inside porous methyl silsesquioxane (MSQ) in a Ta/MSQ/Si structure after BTS.

Drain bias dependent bias temperature stress instability in a-Si:H TFT

2009 ◽  
Vol 53 (2) ◽  
pp. 225-233 ◽  
Author(s):  
Z. Tang ◽  
M.S. Park ◽  
S.H. Jin ◽  
C.R. Wie
Keyword(s):  
Temperature Stress ◽  
Drain Bias ◽  
Bias Temperature Stress

scholarly journals Analysis of Leakage Current in Cu/SiO2/Si/Al Capacitors under Bias-Temperature Stress

2003 ◽  
Vol 42 (Part 1, No. 10) ◽  
pp. 6384-6389 ◽  
Author(s):  
Hirotaka Nishino ◽  
Takuya Fukuda ◽  
Hiroshi Yanazawa ◽  
Hironori Matsunaga
Keyword(s):  
Leakage Current ◽  
Temperature Stress ◽  
Bias Temperature Stress

1700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable 225°C Operation

2014 ◽  
Vol 778-780 ◽  
pp. 903-906 ◽  
Author(s):  
Kevin Matocha ◽  
Kiran Chatty ◽  
Sujit Banerjee ◽  
Larry B. Rowland
Keyword(s):  
High Temperature ◽  
Temperature Stress ◽  
High Temperatures ◽  
Threshold Voltage ◽  
Room Temperature ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Device Reliability ◽  
Bias Temperature Stress ◽  
High Temperature Operation

We report a 1700V, 5.5mΩ-cm24H-SiC DMOSFET capable of 225°C operation. The specific on-resistance of the DMOSFET designed for 1200V applications is 8.8mΩ-cm2at 225°C, an increase of only 60% compared to the room temperature value. The low specific on-resistance at high temperatures enables a smaller die size for high temperature operation. Under a negative gate bias temperature stress (BTS) at VGS=-15 V at 225°C for 20 minutes, the devices show a threshold voltage shift of ΔVTH=-0.25 V demonstrating one of the key device reliability requirements for high temperature operation.

Concentration and Uptake of 5-Hydroxytryptamine in Platelets from Cluster Headache and Migraine Patients

Cephalalgia ◽  
1985 ◽  
Vol 5 (1) ◽  
pp. 45-54 ◽  
Author(s):  
Elisabet Waldenlind ◽  
Svante B Ross ◽  
Jan Sääf ◽  
Karl Ekbom ◽  
Lennart Wetterberg
Keyword(s):  
Cluster Headache ◽  
Whole Blood ◽  
Significant Positive Correlation ◽  
Healthy Controls ◽  
Platelet Monoamine Oxidase ◽  
5 Ht Uptake ◽  
Low K ◽  
Kinetics Of ◽  
Obvious Relation ◽  
Headache Patients

Concentrations of 5-hydroxytryptamine (5-HT) in platelets were determined in 33 cluster headache patients (17 males) and in 34 migraine patients (16 males) outside attacks. The 5-HT uptake into platelets was measured and the kinetic constants Vmax and Km determined in 26 cluster patients (14 males) and in 30 migraine patients (13 males). Significantly lower 5-HT concentrations in whole blood were found in cluster headache and migraine patients than in 50 healthy controls (19 males). The Vmax and Km values of the 5-HT uptake were significantly lower in cluster headache and migraine patients compared with 22 healthy controls (9 males). The 5-HT concentrations and the kinetics of the 5-HT uptake did not differ between cluster headache and migraine. In healthy controls a significant positive correlation was found between the 5-HT uptake rate at 0.25 μM and Km but not in cluster headache and migraine patients. The 5-HT concentrations in whole blood correlated positively with Vmax and Km, respectively, in cluster headache and with Km in healthy controls but not with Vmax nor with Km in migraine. There was no obvious relation between the kinetics of platelet monoamine oxidase (MAO) and the 5-HT uptake except for an increased incidence of low Vmax of MAO and low Km of the 5-HT uptake in cluster headache. The kinetics of the 5-HT uptake was apparently not related to the state of migraine. The results indicate a possible constitutional trait in cluster headache and migraine expressed as low 5-HT concentrations in whole blood and low Vmax and Km of the 5-HT uptake into platelets.

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