Self‐cleaning effect in partially ionized beam deposition of Cu films

1989 ◽  
Vol 66 (9) ◽  
pp. 4519-4521 ◽  
Author(s):  
G.‐R. Yang ◽  
P. Bai ◽  
T.‐M. Lu ◽  
W. M. Lau
Keyword(s):  
Cu Films ◽  
Partially Ionized ◽  
Self Cleaning ◽  
Beam Deposition

Thermal Stability of Cu Films on Tin/Ti/Si(100) by Partially Ionized Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
H. G. Jang ◽  
K. H. Kim ◽  
D. J. Choi ◽  
S. Han ◽  
S. C. Choi ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Depth Profiling ◽  
Film Surface ◽  
Cu Films ◽  
Profiling Techniques ◽  
Partially Ionized ◽  
Thermal Stability Of ◽  
Beam Deposition

AbstractCu thin films with a thickness around 850 Å were prepared on Ti45N55/Ti/Si(100) substrates at room temperature by partially ionized beam deposition (PIBD) with an ion energy of 3 keV at pressure of 8×10−7-1 x 10−6 Torr. The Cu/Ti45N55/Ti/Si samples were annealed at 8×10−6-1 × 10−5 Torr with annealing temperature of 500 to 700 °C for 30 min.. Thermal stability of the PIB-Cu films was investigated with Rutherford backscattering spectrometry (RBS), Auger electron spectroscopy (AES), Scanning electron microscopy (SEM), and X-ray diffraction (XRD). The as deposited Cu films had a (111) texture and there was no change of phase in annealed Cu films regardless of annealing temperature. Grain size of the annealed Cu films increased with annealing temperature. SEM studies show no hillock and no voiding on the Cu film surface up to annealing temperature of 700 °C. For PIB-Cu/Ti45N55/Ti/Si samples, all the layers were intact and there was no indication of interdiffusion by conventional depth profiling techniques (RBS, AES) up to 700 °C in vacuum for 30 minutes.

Deposition of Cu Films for Laser Mirror by Partially Ionized Beam Deposition

1995 ◽  
Vol 396 ◽  
Author(s):  
Seok-Keun Koh ◽  
Young-Soo Yoon ◽  
Ki-Hwan Kim ◽  
Hong-Gui Jang ◽  
Hyung-Jin Jung
Keyword(s):  
Surface Roughness ◽  
Room Temperature ◽  
Film Surface ◽  
Cu Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cu Film ◽  
Partially Ionized ◽  
Acceleration Voltage ◽  
Beam Deposition

AbstractPartially ionized beam deposition of Cu thin films on glass at room temperature were carried out to fabricate Cu laser mirrors with good structural and reflectance properties. At a constant film thickness of 600 Å, the grain size of as-grown Cu films increased with acceleration voltage, and there was no indication of defects such as cracks and/or large pores in the film surface as shown in scanning electron microscopy images. Root-mean-square(Rms) surface roughnesses of the films with thicknesses of 600 Å were measured by atomic force microscopy. RmS surface roughness increased when acceleration voltage increased from 0 kV to 2 kV, but decreased at the acceleration voltage of 3 kV. RmS surface roughness of the film grown at 4 kV, however, increased again. At the acceleration voltage of 3 kV, reflectance of the films increased with the film thickness until 600 Å and decreased at the film thickness of 800 Å. The reflectance results showed that the Cu film deposited at 3 kV had higher reflectance than that of others. Our results suggest that it is possible to grow the Cu film with good structural and optical properties on glass substrate at room temperature by partially ionized beam deposition.

Thermal Stability of Cu Films on Tin/Ti/Si(100) by Partially Ionized Beam Deposition

1996 ◽  
Vol 439 ◽  
Author(s):  
H. G. Jang ◽  
K. H. Kim ◽  
D. J. Choi ◽  
S. Han ◽  
S. C. Choi ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Depth Profiling ◽  
Film Surface ◽  
Cu Films ◽  
Profiling Techniques ◽  
Partially Ionized ◽  
Thermal Stability Of ◽  
Beam Deposition

AbstractCu thin films with a thickness around 850 Å were prepared on Ti45N55/Ti/Si(100) substrates at room temperature by partially ionized beam deposition (PIBD) with an ion energy of 3 keV at pressure of 8×10−7–1 × 10−6 Torr. The Cu/Ti45N55/Ti/Si samples were annealed at 8× 10−6–1 × 10−5 Torr with annealing temperature of 500 to 700 °C for 30 min.. Thermal stability of the PIB-Cu films was investigated with Rutherford backscattering spectrometry (RBS), Auger electron spectroscopy (AES), Scanning electron microscopy (SEM), and X-ray diffraction (XRD).The as deposited Cu films had a (111) texture and there was no change of phase in annealed Cu films regardless of annealing temperature. Grain size of the annealed Cu films increased with annealing temperature. SEM studies show no hillock and no voiding on the Cu film surface up to annealing temperature of 700 °C. For PIB-Cu/Ti45N55/Ti/Si samples, all the layers were intact and there was no indication of interdiffusion by conventional depth profiling techniques (RBS, AES) up to 700 °C in vacuum for 30 minutes.

Cu films by partially ionized beam deposition for ultra large scale integration metallization

1998 ◽  
Vol 13 (5) ◽  
pp. 1158-1163 ◽  
Author(s):  
Ki-Hwan Kim ◽  
Hong-Gui Jang ◽  
Sung Han ◽  
Hyung-Jin Jung ◽  
Seok-Keun Koh ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Large Scale ◽  
Scratch Test ◽  
Cu Films ◽  
Cu Film ◽  
Large Scale Integration ◽  
Via Holes ◽  
Partially Ionized ◽  
Scale Integration ◽  
Beam Deposition

Highly (111) oriented Cu films with a thickness around 1800 Å were prepared on Si(100) at room temperature by partially ionized beam deposition (PIBD) at pressure of 8 × 10-7-1 × 10-6 Torr. Effects of acceleration voltage (Va) between 0 and 4 kV on such properties as crystallinity, surface roughness, resistivity, etc. of the films have been investigated. The Cu films deposited by PIBD had only (111) and (200) planes, and the relative intensity ratio, I(111)/I(200) of the Cu films increased from 6.8 at Va = 0 kV to 37 at Va = 4 kV. There was no indication of impurities in the system from Auger electron spectroscopy (AES) analyses. A large increase in grain size of the films occurred with Va up to Va = 1 kV, but little increase occurred with Va > 1 kV. Surface roughness of the Cu films decreased with Va, and resistivity showed the same trends as that of the surface roughness. In the Cu films by PIBD, it is considered that changes of resistivity are mainly due to a surface scattering rather than a grain boundary scattering. The via holes, dimensions of which are 0.5 μm in diameter and 1.5 μm in depth, in the Cu films made at Va = 4 kV were completely filled without voids. Interface adhesion of the Cu film on Si(100) deposited at Va = 3 kV was five times greater than that of Cu film deposited at Va = 0 kV, as determined by a scratch test.

Electron Transport in Highly Textured Metal Films Grown by Partially Ionized Beam Deposition

1995 ◽  
Vol 403 ◽  
Author(s):  
S. R. Soss ◽  
B. Gittleman ◽  
K. E. Mello ◽  
T.-M. Lu ◽  
S. L. Lee
Keyword(s):  
Dislocation Density ◽  
Grain Boundaries ◽  
Electron Scattering ◽  
Delta Function ◽  
Fiber Texture ◽  
Cu Films ◽  
Film Resistivity ◽  
Average Dislocation Density ◽  
Amorphous Substrates ◽  
Partially Ionized

AbstractIn principle, the resistivity of bulk FCC cubic materials should not depend on the orientation due to the fact that the conductivity tensor is single valued. However, we show that this conclusion is not valid for thin films. Deposition of highly oriented Al, Ag, and Cu films on amorphous substrates using the partially ionized beam (PIB) technique exhibit a resistivity which is strongly correlated with the texture, i.e., the tighter the texture, the lower the film resistivity. We model the film as an array of grains whose grain boundaries can be considered as delta function potentials for electron scattering and the strength of the potentials can be calculated from the measured resistivity of the films. On the other hand, the fiber texture distribution of the the films is obtained from X-ray pole figure measurements, and Monte-Carlo simulations are then performed using this data to determine the average dislocation density at the grain boundaries due to the grain to grain crystallographic mismatch. We show that the transmittance coefficient for electron scattering, and therefore the film resistivity, is a monotonically increasing function of the average dislocation density. We therefore conclude that the structure of grain boundaries in a thin film provides the necessary mechanism by which the resistivity of an FCC cubic metal can depend on the texture.

Study of interface impurity sputtering in partially ionized beam deposition of Cu on Si

1990 ◽  
Vol 68 (7) ◽  
pp. 3619-3624 ◽  
Author(s):  
P. Bai ◽  
G.‐R. Yang ◽  
T.‐M. Lu
Keyword(s):  
Partially Ionized ◽  
Beam Deposition

Cu films deposited by a partially ionized beam (PIB)

1996 ◽  
Vol 287 (1-2) ◽  
pp. 266-270 ◽  
Author(s):  
Seok-Keun Koh ◽  
Won-Kook Choi ◽  
Ki-Hwan Kim ◽  
Hyung-Jin Jung
Keyword(s):  
Cu Films ◽  
Partially Ionized

Partially ionized beam deposition of 2‐methyl‐4‐nitroaniline thin films

1991 ◽  
Vol 70 (11) ◽  
pp. 6766-6773 ◽  
Author(s):  
T. C. Nason ◽  
J. F. McDonald ◽  
T.‐M. Lu
Keyword(s):  
Thin Films ◽  
Partially Ionized ◽  
Beam Deposition

Epitaxial growth of Al(111)/Si(111) films using partially ionized beam deposition

1987 ◽  
Vol 51 (24) ◽  
pp. 1992-1994 ◽  
Author(s):  
C.‐H. Choi ◽  
R. A. Harper ◽  
A. S. Yapsir ◽  
T.‐M. Lu
Keyword(s):  
Epitaxial Growth ◽  
Partially Ionized ◽  
Beam Deposition
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