Thermal Stability of Cu Films on Tin/Ti/Si(100) by Partially Ionized Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
H. G. Jang ◽  
K. H. Kim ◽  
D. J. Choi ◽  
S. Han ◽  
S. C. Choi ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Depth Profiling ◽  
Film Surface ◽  
Cu Films ◽  
Profiling Techniques ◽  
Partially Ionized ◽  
Thermal Stability Of ◽  
Beam Deposition

AbstractCu thin films with a thickness around 850 Å were prepared on Ti45N55/Ti/Si(100) substrates at room temperature by partially ionized beam deposition (PIBD) with an ion energy of 3 keV at pressure of 8×10−7-1 x 10−6 Torr. The Cu/Ti45N55/Ti/Si samples were annealed at 8×10−6-1 × 10−5 Torr with annealing temperature of 500 to 700 °C for 30 min.. Thermal stability of the PIB-Cu films was investigated with Rutherford backscattering spectrometry (RBS), Auger electron spectroscopy (AES), Scanning electron microscopy (SEM), and X-ray diffraction (XRD). The as deposited Cu films had a (111) texture and there was no change of phase in annealed Cu films regardless of annealing temperature. Grain size of the annealed Cu films increased with annealing temperature. SEM studies show no hillock and no voiding on the Cu film surface up to annealing temperature of 700 °C. For PIB-Cu/Ti45N55/Ti/Si samples, all the layers were intact and there was no indication of interdiffusion by conventional depth profiling techniques (RBS, AES) up to 700 °C in vacuum for 30 minutes.

Thermal Stability of Cu Films on Tin/Ti/Si(100) by Partially Ionized Beam Deposition

1996 ◽  
Vol 439 ◽  
Author(s):  
H. G. Jang ◽  
K. H. Kim ◽  
D. J. Choi ◽  
S. Han ◽  
S. C. Choi ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Depth Profiling ◽  
Film Surface ◽  
Cu Films ◽  
Profiling Techniques ◽  
Partially Ionized ◽  
Thermal Stability Of ◽  
Beam Deposition

AbstractCu thin films with a thickness around 850 Å were prepared on Ti45N55/Ti/Si(100) substrates at room temperature by partially ionized beam deposition (PIBD) with an ion energy of 3 keV at pressure of 8×10−7–1 × 10−6 Torr. The Cu/Ti45N55/Ti/Si samples were annealed at 8× 10−6–1 × 10−5 Torr with annealing temperature of 500 to 700 °C for 30 min.. Thermal stability of the PIB-Cu films was investigated with Rutherford backscattering spectrometry (RBS), Auger electron spectroscopy (AES), Scanning electron microscopy (SEM), and X-ray diffraction (XRD).The as deposited Cu films had a (111) texture and there was no change of phase in annealed Cu films regardless of annealing temperature. Grain size of the annealed Cu films increased with annealing temperature. SEM studies show no hillock and no voiding on the Cu film surface up to annealing temperature of 700 °C. For PIB-Cu/Ti45N55/Ti/Si samples, all the layers were intact and there was no indication of interdiffusion by conventional depth profiling techniques (RBS, AES) up to 700 °C in vacuum for 30 minutes.

Thermal Stability and Internal Stress for Strongly (111) Oriented Cu Films

2003 ◽  
Vol 795 ◽  
Author(s):  
Sinji Takayama ◽  
Makato Oikawa ◽  
Tokuji Himuro
Keyword(s):  
Thermal Stability ◽  
Strain Distribution ◽  
Film Surface ◽  
Grazing Incidence ◽  
Internal Stresses ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cu Films ◽  
X Ray Scattering ◽  
Thermal Stability Of

ABSTRACTInternal stresses and thermal stability of strongly (111) oriented Cu thin films, which are one of promising interconnect materials in advanced ULSI devices, have been studied comparing with those of non-oriented Cu films. Their internal stresses parallel to a film surface were measured by a conventional X-ray diffraction technique (d-spacing vs. sin2ψ method), while the strain distribution with depth by a grazing incidence X-ray scattering (GIXS) methods. Large stress relaxation in strongly (111) oriented Cu films takes place at 200°C without showing any significant grain growth and formation of thermal defects like hillocks. The residual internal stresses of highly oriented (111) Cu films increase almost linearly throughout the thickness up to the substrates. The feature of stress distribution in film depth does not change on annealing. The changes of the residual stresses at each depth are nearly the same as stresses parallel to film surface measured.

Deposition of Cu Films for Laser Mirror by Partially Ionized Beam Deposition

1995 ◽  
Vol 396 ◽  
Author(s):  
Seok-Keun Koh ◽  
Young-Soo Yoon ◽  
Ki-Hwan Kim ◽  
Hong-Gui Jang ◽  
Hyung-Jin Jung
Keyword(s):  
Surface Roughness ◽  
Room Temperature ◽  
Film Surface ◽  
Cu Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cu Film ◽  
Partially Ionized ◽  
Acceleration Voltage ◽  
Beam Deposition

AbstractPartially ionized beam deposition of Cu thin films on glass at room temperature were carried out to fabricate Cu laser mirrors with good structural and reflectance properties. At a constant film thickness of 600 Å, the grain size of as-grown Cu films increased with acceleration voltage, and there was no indication of defects such as cracks and/or large pores in the film surface as shown in scanning electron microscopy images. Root-mean-square(Rms) surface roughnesses of the films with thicknesses of 600 Å were measured by atomic force microscopy. RmS surface roughness increased when acceleration voltage increased from 0 kV to 2 kV, but decreased at the acceleration voltage of 3 kV. RmS surface roughness of the film grown at 4 kV, however, increased again. At the acceleration voltage of 3 kV, reflectance of the films increased with the film thickness until 600 Å and decreased at the film thickness of 800 Å. The reflectance results showed that the Cu film deposited at 3 kV had higher reflectance than that of others. Our results suggest that it is possible to grow the Cu film with good structural and optical properties on glass substrate at room temperature by partially ionized beam deposition.

Thermal Stability of Ultrafine-Grained Pure Titanium Processed by High-Pressure Torsion

2021 ◽  
Vol 1016 ◽  
pp. 338-344
Author(s):  
Wan Ji Chen ◽  
Jie Xu ◽  
De Tong Liu ◽  
De Bin Shan ◽  
Bin Guo ◽  
...  
Keyword(s):  
Activation Energy ◽  
Thermal Stability ◽  
Grain Size ◽  
High Pressure ◽  
Annealing Temperature ◽  
High Pressure Torsion ◽  
Stored Energy ◽  
Ultrafine Grained ◽  
Average Grain Size ◽  
Thermal Stability Of

High-pressure torsion (HPT) was conducted under 6.0 GPa on commercial purity titanium up to 10 turns. An ultrafine-grained (UFG) pure Ti with an average grain size of ~96 nm was obtained. The thermal properties of these samples were studied by using differential scanning calorimeter (DSC) which allowed the quantitative determination of the evolution of stored energy, the recrystallization temperatures, the activation energy involved in the recrystallization of the material and the evolution of the recrystallized fraction with temperature. The results show that the stored energy increases, beyond which the stored energy seems to level off to a saturated value with increase of HPT up to 5 turns. An average activation energy of about 101 kJ/mol for the recrystallization of 5 turns samples was determined. Also, the thermal stability of the grains of the 5 turns samples with subsequent heat treatments were investigated by microstructural analysis and Vickers microhardness measurements. It is shown that the average grain size remains below 246 nm when the annealing temperature is below 500 °C, and the size of the grains increases significantly for samples at the annealing temperature of 600 °C.

Effect of annealing temperature on the thermal stability of FeCrNiMnMoxSi0.5B0.5 coatings

2019 ◽  
Vol 35 (11) ◽  
pp. 962-969 ◽  
Author(s):  
Ying Zhu ◽  
Xiong Ya Guo ◽  
Cheng Wen Liu ◽  
Fang Zhou ◽  
Bin Qi Liu
Keyword(s):  
Thermal Stability ◽  
Annealing Temperature ◽  
Thermal Stability Of

Dependence of Vickers Hardness on Annealing Temperature at Co/Cu Multilayered Films

2007 ◽  
Vol 561-565 ◽  
pp. 2399-2402
Author(s):  
Yoshihisa Kaneko ◽  
H. Sakakibara ◽  
Satoshi Hashimoto
Keyword(s):  
Thermal Stability ◽  
Vickers Hardness ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Copper Substrate ◽  
The Other ◽  
Multilayered Structures ◽  
Multilayered Films ◽  
Hardness Tests ◽  
Thermal Stability Of

Co/Cu and Ni/Cu multilayers fabricated by electroplating technique were annealed at various temperatures in order to investigate thermal stability of multilayered structures. Vickers hardness tests on the annealed Co/Cu and Ni/Cu multilayers were conducted at room temperature. It was recognized that after the annealing at 1023K the Co/Cu multilayer still maintained the hardness of as-deposited state. On the other hand, the hardness of Ni/Cu multilayer was almost identical to copper substrate after the annealing at 903K.

Implant isolation of ZnO epitaxial layers

2002 ◽  
Vol 744 ◽  
Author(s):  
S. O. Kucheyev ◽  
C. Jagadish ◽  
J. S. Williams ◽  
P. N. K. Deenapanray ◽  
Mitsuaki Yano ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Single Crystal ◽  
Sheet Resistance ◽  
Annealing Temperature ◽  
Ion Beam ◽  
Irradiation Temperature ◽  
Minor Effect ◽  
Electrical Isolation ◽  
Atomic Displacements ◽  
Thermal Stability Of

ABSTRACTThe formation of highly resistive films of single-crystal ZnO as a result of irradiation with MeV Li, O, and Si ions is demonstrated. Results show that the ion doses necessary for electrical isolation close-to-inversely depend on the number of ion-beam-generated atomic displacements. Results show that an increase in the dose of 2 MeV O ions (up to ∼ 2 orders of magnitude above the threshold isolation dose) and irradiation temperature (up to 350 °C) has a relatively minor effect on the thermal stability of electrical isolation, which is limited to temperatures of ∼ 300 — 400 °C. For the case of multiple-energy implantation with keV Cr, Fe, or Ni ions, the evolution of sheet resistance with annealing temperature is consistent with defect-induced isolation, with a relatively minor effect of Cr, Fe, or Ni impurities on the thermal stability of isolation. Based on these results, the mechanism for electrical isolation in ZnO by ion bombardment is discussed.

Sputtered Cu Films Containing Various Insoluble Substances for Advanced Barrierless Metallization

2007 ◽  
Vol 539-543 ◽  
pp. 3497-3502 ◽  
Author(s):  
J.P. Chu ◽  
C.H. Lin
Keyword(s):  
Thermal Stability ◽  
Leakage Current ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
The Other ◽  
Oxide Semiconductor ◽  
Good Thermal Stability ◽  
Cu Films ◽  
Pure Cu ◽  
Thermal Stability Of

Sputtered Cu films containing various insoluble substances, such as Cu(W2.3), Cu(Mo2.0), Cu(Nb0.4), Cu(C2.1) and Cu(W0.4C0.7), are examined in this study. These films are prepared by magnetron sputtering, followed by thermal annealing. The crystal structure, microstructure, SIMS depth-profiles, leakage current, and resistivity of the films are investigated. Good thermal stability of these Cu films is confirmed with focused ion beam, X-ray diffractometry, SIMS, and electrical property measurements. After annealing at 400°C, obvious drops in resistivity, to ~3.8 μ-cm, are seen for Cu(W) film, which is lower than the other films. An evaluation of the leakage current characteristic from the SiO2/Si metal-oxide-semiconductor (MOS) structure also demonstrates that Cu with dilute tungsten is more stable than the other films studied. These results further indicate that the Cu(W) film has more thermal stability than the Cu(Mo), Cu(Nb), Cu(C), Cu(WC) and pure Cu films. Therefore, the film is suitable for the future barrierless metallization.

Thermal Stability of Platinum Silicide in Deep Sub-Micron Lines

1995 ◽  
Vol 391 ◽  
Author(s):  
Dan-Xia Xu ◽  
Suhit R. Das ◽  
Lynden Erickson ◽  
Abdalla Naem
Keyword(s):  
Thermal Stability ◽  
Sheet Resistance ◽  
Annealing Temperature ◽  
Electrical Conductance ◽  
Sharp Decrease ◽  
Platinum Silicide ◽  
Deflection System ◽  
Stability Of Resistance ◽  
Pt Films ◽  
Thermal Stability Of

AbstractThe properties of platinum silicide have been evaluated in the form of blanket films and confined lines with linewidth down to 0.15 μm. Pt films, ranging in thickness from 150Å to 1000Å, were prepared by sputter-deposition onto Si (100) blanket substrates or substrates patterned with windows of various sizes in SiO2. The samples were then annealed in a rapid thermal annealing system up to 550°C to form PtSi. The sheet resistance of silicide lines did not change significantly with linewidth. The thermal stability of the sheet resistance of PtSi was also measured for different linewidths and film thicknesses. The sheet resistance remained stable on annealing up to 850°C for a silicide film made of 250Å Pt and did not appear to be sensitive to the linewidth. The thickness dependence of the thermal stability of resistance was also evaluated.The stress of the silicide films was measured using a laser deflection system. The asdeposited metal films were under compressive stress, but the stress turned into tensile upon annealing when silicide started to form. After PtSi was formed, the stress remained stable with annealing temperature until approximately 900°C when the stress exhibited a sharp decrease. Unlike electrical conductance, however, the breakdown temperature for stress did not strongly depend on the film thickness.

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