Partially ionized beam deposition of 2‐methyl‐4‐nitroaniline thin films

1991 ◽  
Vol 70 (11) ◽  
pp. 6766-6773 ◽  
Author(s):  
T. C. Nason ◽  
J. F. McDonald ◽  
T.‐M. Lu
Keyword(s):  
Thin Films ◽  
Partially Ionized ◽  
Beam Deposition

Reactive partially ionized beam deposition of AlN thin films

1997 ◽  
Vol 33 (3-4) ◽  
pp. 133-136 ◽  
Author(s):  
Jiayou Feng ◽  
Junqing Xie ◽  
Qingwei Mo
Keyword(s):  
Thin Films ◽  
Partially Ionized ◽  
Beam Deposition

Structural Characteristics of CoGe2 Alloy Films Grown Heteroepitaxially on GaAs(100) Substrates Using the Partially Ionized Beam Deposition Technique

1996 ◽  
Vol 427 ◽  
Author(s):  
K. E. Mello ◽  
S. P. Murarkak ◽  
S. L. Lee ◽  
T.-M. Lu
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Ohmic Contact ◽  
Structural Characteristics ◽  
Deposition Technique ◽  
Ion Energy ◽  
Alloy Films ◽  
Partially Ionized ◽  
Beam Deposition

AbstractThe Partially ionized beam (PIB) deposition technique was used to deposit CoGe2 thin films heteroepitaxially on GaAs(100) substrates in a conventional vacuum. For the CoGe2(001)/GaAs(100) system, which leads to an Ohmic contact, a substrate temperature of 280°C and ∼1200 eV Ge+ ions are required. Reducing the ion energy or lowering the substrate temperature both produce a different orientation in the films. Films deposited at 280°C with a zero accelerating potential for the ions, and those deposited at 200°C with -1200 eV Ge+ ions result in a CoGe2(100)//GaAs(100) type orientation domination, leading to rectifying behavior.

Partially Ionized Beam Deposition of Thin Films

1989 ◽  
Vol 147 ◽  
Author(s):  
T.-M. Lu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Damage ◽  
Surface Interactions ◽  
Surface Cleaning ◽  
Film Properties ◽  
Surface Ordering ◽  
Partially Ionized ◽  
Enhanced Surface ◽  
Beam Deposition

AbstractIt has been shown recently that using less than a few percent of self-ions, i.e., ions derived from the deposition material itself, (partially ionized beam (PIB) deposition), one can dramatically modify thin film properties. In this paper we discuss phenomena such as surface cleaning, enhanced surface ordering, and ion-induced surface damage associated with PIB-surface interactions. PIB metal deposition has been emphasized.

Electron energy loss spectroscopy of diamond-like carbon thin films

1992 ◽  
Vol 50 (2) ◽  
pp. 1272-1273
Author(s):  
J. Kulik ◽  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
J.W. Rabalais ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Electron Energy ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Ion Beam Deposition ◽  
Chemistry Research ◽  
Carbon Thin Films ◽  
Electron Energy Loss ◽  
Beam Deposition

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.

Ionic Conductivities of Doped CeO2 Thin Films as Related to Their Microstructure

1995 ◽  
Vol 411 ◽  
Author(s):  
Chunyan Tian ◽  
Siu-Wai Chan
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ionic Conductivities ◽  
Dielectric Constants ◽  
Grain Structure ◽  
X Ray Diffraction ◽  
Fine Grain ◽  
Brick Layer Model ◽  
Columnar Grain ◽  
Beam Deposition

ABSTRACTThin films of 4% Y2O3 doped CeO2/Pd film/(001)LaA103 with a very low pinhole density were successfully prepared using electron-beam deposition technique. The microstructure of the films was characterized by x-ray diffraction and the electrical properties were studied as a function of temperature with AC impedance spectroscopy. A brick layer model was adopted to correlate the electrical properties to the microstructure of the films, which can be simplified as either a series or a parallel equivalent circuit associated with either a fine grain or a columnar grain structure, respectively. The conductivities of the films fell between the conductivities derived from the two circuit models, suggesting that the films are of a mixed fine grain and columnar grain structure. The measured dielectric constants of the films were found smaller than that of the bulk.

Electron-beam deposition of vanadium dioxide thin films

2012 ◽  
Vol 111 (3) ◽  
pp. 975-981 ◽  
Author(s):  
R. E. Marvel ◽  
K. Appavoo ◽  
B. K. Choi ◽  
J. Nag ◽  
R. F. Haglund
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Vanadium Dioxide ◽  
Electron Beam Deposition ◽  
Vanadium Dioxide Thin Films ◽  
Beam Deposition

Study of interface impurity sputtering in partially ionized beam deposition of Cu on Si

1990 ◽  
Vol 68 (7) ◽  
pp. 3619-3624 ◽  
Author(s):  
P. Bai ◽  
G.‐R. Yang ◽  
T.‐M. Lu
Keyword(s):  
Partially Ionized ◽  
Beam Deposition

Charge Assisted Deposition of Polycrystalline Silicon Thin Films by Cesium Sputter Ion Beam Deposition

2004 ◽  
Vol 43 (10) ◽  
pp. 6880-6883 ◽  
Author(s):  
Deuk Yeon Lee ◽  
Yong Hwan Kim ◽  
In Kyo Kim ◽  
Dong Joon Choi ◽  
Soon Moon Jeong ◽  
...  
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Ion Beam ◽  
Ion Beam Deposition ◽  
Silicon Thin Films ◽  
Beam Deposition
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