Deposition of Cu Films for Laser Mirror by Partially Ionized Beam Deposition

1995 ◽  
Vol 396 ◽  
Author(s):  
Seok-Keun Koh ◽  
Young-Soo Yoon ◽  
Ki-Hwan Kim ◽  
Hong-Gui Jang ◽  
Hyung-Jin Jung
Keyword(s):  
Surface Roughness ◽  
Room Temperature ◽  
Film Surface ◽  
Cu Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cu Film ◽  
Partially Ionized ◽  
Acceleration Voltage ◽  
Beam Deposition

AbstractPartially ionized beam deposition of Cu thin films on glass at room temperature were carried out to fabricate Cu laser mirrors with good structural and reflectance properties. At a constant film thickness of 600 Å, the grain size of as-grown Cu films increased with acceleration voltage, and there was no indication of defects such as cracks and/or large pores in the film surface as shown in scanning electron microscopy images. Root-mean-square(Rms) surface roughnesses of the films with thicknesses of 600 Å were measured by atomic force microscopy. RmS surface roughness increased when acceleration voltage increased from 0 kV to 2 kV, but decreased at the acceleration voltage of 3 kV. RmS surface roughness of the film grown at 4 kV, however, increased again. At the acceleration voltage of 3 kV, reflectance of the films increased with the film thickness until 600 Å and decreased at the film thickness of 800 Å. The reflectance results showed that the Cu film deposited at 3 kV had higher reflectance than that of others. Our results suggest that it is possible to grow the Cu film with good structural and optical properties on glass substrate at room temperature by partially ionized beam deposition.

Cu Films on Si(100) by Partially Ionized Beam Deposition

1996 ◽  
Vol 427 ◽  
Author(s):  
Seok-Keun Koh ◽  
Ki-Hwan Kim ◽  
Sung Han ◽  
Hong Gui Jang ◽  
Hyung-Jin Jung
Keyword(s):  
Surface Roughness ◽  
Room Temperature ◽  
Scratch Test ◽  
Surface Scattering ◽  
Boundary Scattering ◽  
Cu Films ◽  
Cu Film ◽  
Via Holes ◽  
Acceleration Voltage ◽  
Beam Deposition

AbstractHighly (111) oriented Cu films with a thickness around 1800 Å were prepared on Si (100) at room temperature by partialy ionized beam deposition (PIBD) at pressure of 8 × 10-7 - 1 × 10-6 torr. Effects of acceleration voltage (Va) between 0 and 4 kV on such properties as crystallinity, surface roughness, resistivity, etc. of the films have been investigated. The Cu films deposited by PIBD had only (111) and (200) planes and the relative intensity ratio, 1(111)/I(200), of the films increased from 6.8 at Va=0 kV to 37 at Va=4 kV. There was no indication of impurities in the system from AES analyses. A large increase in grain size of the films occurred with Va up to Va– 1 kV, but little increase occurred with Va>lkV. Surface roughness of the films at the ionization potential of 400 V decreased with Va, and resisivity had the same trends as that of the surface roughness. In the Cu films made by PIBD, it appears that changes of resistivity are mainly due to a surface scattering rather than a grain boundary scattering. The via holes, which is of 0.5. μm diameter x 1.5 μm deep, in the Cu films made at Va=4 kV, were completely filled without voids. Adhesion of the Cu film on Si(100) deposited at Va=3 kV was 5 times greater than that of Cu film deposited at Va=0 kV, as determined by a scratch test.

Electrical Resistivity of Copper Films by Partially Ionized Beam Deposition

1996 ◽  
Vol 439 ◽  
Author(s):  
S. Han ◽  
K. H. Yoon ◽  
K. H. Kim ◽  
H. G. Jang ◽  
S. C. Choi ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Grain Size ◽  
Copper Films ◽  
X Ray Diffraction ◽  
Ion Energy ◽  
Xrd Pattern ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cu Film ◽  
Partially Ionized

AbstractCopper films on Si(100) were prepared by partially ionized beam at 0 kV and 3 kV acceleration voltages in order to investigate effects of ion energy on electrical property with thickness. X-ray diffraction(XRD) pattern analysis was used to investigate crystallinity of the copper films, microstructure by Scanning electron microscope(SEM) and surface roughness by atomic force microscopy(AFM). The crystallinity of the copper films grown at the 3 kV was more (111) textured than that at the 0 kV. The copper films grown at the both conditions had nearly same grain size below a thickness of 1000 Å. The 1800 Å Cu film grown at the 3 kV was 3 times rough than that at the 0 kV. The resistivity of copper films increased due to surface and grain boundary scattering, and the change of resistivity was discussed in terms of surface roughness, grain size and film density assisted by average depositing energy.

Growth and Structure of Metallic Barrie Laye and Interconnect Films I: Exeriments

1999 ◽  
Vol 564 ◽  
Author(s):  
D. L. Windt ◽  
J. Dalla Torre ◽  
G. H. Gilmer ◽  
J. Sapjeta ◽  
R. Kalyanaraman ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Orientation Angle ◽  
Film Surface ◽  
Growth Direction ◽  
Film Structure ◽  
Argon Pressure ◽  
Cu Films ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

AbstractWe present experimental results directed at understanding the growth and structure of metallic barrier layer and interconnect films. Numerical simulation results associated with this experimental work are presented in an accompanying paper in these proceedings. Here, thin films of Al, Ti, Cu and Ta have been grown by magnetron sputtering onto oxidized Si substrates. Using a specially-constructed substrate holder, the orientation of the substrate with respect to the growth direction was varied from horizontal to vertical. Films were grown at both low and high argon pressure; in the case of Ta, the cathode power was varied as well. The film structure and in particular the surface roughness was measured by X-ray reflectance and also by atomic force microscopy. We find that the surface roughness increases markedly with orientation angle in the case of Ta and Cu films, and in Ti films grown at high argon pressure. At low pressure, however, the Ti film surface roughness remains constant for all substrate orientations. No variation in roughness with either orientation angle or argon pressure was observed in the Al films. These results suggest that, under certain circumstances, shadowing effects and/or grain orientation (i.e., texture) competition during growth can give rise to lower density, more porous (and thus more rough) films, particularly at large orientation angles, as on sidewalls in sub-micron trenches.

Electrical Resistivity of Copper Films by Partially Ionized Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
S. Han ◽  
K. H. Yoon ◽  
K. H. Kim ◽  
H. G. Jang ◽  
S. C. Choi ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Grain Size ◽  
Copper Films ◽  
X Ray Diffraction ◽  
Ion Energy ◽  
Xrd Pattern ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cu Film ◽  
Partially Ionized

AbstractCopper films on Si(100) were prepared by partially ionized beam at 0 kV and 3 kV acceleration voltages in order to investigate effects of ion energy on electrical property with thickness. X-ray diffraction(XRD) pattern analysis was used to investigate crystallinity of the copper films, microstructure by Scanning electron microscope(SEM) and surface roughness by atomic force microscopy(AFM). The crystallinity of the copper films grown at the 3 kV was more (111) textured than that at the 0 kW. The copper films grown at the both condiitions had nearly same grain size below a thickness of 1000 Å. The 1800 Å Cu film grown at the 3 kV was 3 times rough than that at the 0 kV. The resistivity of copper films increased due to surface and grain boundary scattering, and the change of resistivity was discussed in terms of surface roughness, grain size and film density assisted by average depositing energy.

Cu films by partially ionized beam deposition for ultra large scale integration metallization

1998 ◽  
Vol 13 (5) ◽  
pp. 1158-1163 ◽  
Author(s):  
Ki-Hwan Kim ◽  
Hong-Gui Jang ◽  
Sung Han ◽  
Hyung-Jin Jung ◽  
Seok-Keun Koh ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Large Scale ◽  
Scratch Test ◽  
Cu Films ◽  
Cu Film ◽  
Large Scale Integration ◽  
Via Holes ◽  
Partially Ionized ◽  
Scale Integration ◽  
Beam Deposition

Highly (111) oriented Cu films with a thickness around 1800 Å were prepared on Si(100) at room temperature by partially ionized beam deposition (PIBD) at pressure of 8 × 10-7-1 × 10-6 Torr. Effects of acceleration voltage (Va) between 0 and 4 kV on such properties as crystallinity, surface roughness, resistivity, etc. of the films have been investigated. The Cu films deposited by PIBD had only (111) and (200) planes, and the relative intensity ratio, I(111)/I(200) of the Cu films increased from 6.8 at Va = 0 kV to 37 at Va = 4 kV. There was no indication of impurities in the system from Auger electron spectroscopy (AES) analyses. A large increase in grain size of the films occurred with Va up to Va = 1 kV, but little increase occurred with Va > 1 kV. Surface roughness of the Cu films decreased with Va, and resistivity showed the same trends as that of the surface roughness. In the Cu films by PIBD, it is considered that changes of resistivity are mainly due to a surface scattering rather than a grain boundary scattering. The via holes, dimensions of which are 0.5 μm in diameter and 1.5 μm in depth, in the Cu films made at Va = 4 kV were completely filled without voids. Interface adhesion of the Cu film on Si(100) deposited at Va = 3 kV was five times greater than that of Cu film deposited at Va = 0 kV, as determined by a scratch test.

Thermal Stability of Cu Films on Tin/Ti/Si(100) by Partially Ionized Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
H. G. Jang ◽  
K. H. Kim ◽  
D. J. Choi ◽  
S. Han ◽  
S. C. Choi ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Depth Profiling ◽  
Film Surface ◽  
Cu Films ◽  
Profiling Techniques ◽  
Partially Ionized ◽  
Thermal Stability Of ◽  
Beam Deposition

AbstractCu thin films with a thickness around 850 Å were prepared on Ti45N55/Ti/Si(100) substrates at room temperature by partially ionized beam deposition (PIBD) with an ion energy of 3 keV at pressure of 8×10−7-1 x 10−6 Torr. The Cu/Ti45N55/Ti/Si samples were annealed at 8×10−6-1 × 10−5 Torr with annealing temperature of 500 to 700 °C for 30 min.. Thermal stability of the PIB-Cu films was investigated with Rutherford backscattering spectrometry (RBS), Auger electron spectroscopy (AES), Scanning electron microscopy (SEM), and X-ray diffraction (XRD). The as deposited Cu films had a (111) texture and there was no change of phase in annealed Cu films regardless of annealing temperature. Grain size of the annealed Cu films increased with annealing temperature. SEM studies show no hillock and no voiding on the Cu film surface up to annealing temperature of 700 °C. For PIB-Cu/Ti45N55/Ti/Si samples, all the layers were intact and there was no indication of interdiffusion by conventional depth profiling techniques (RBS, AES) up to 700 °C in vacuum for 30 minutes.

Photoluminescence Enhancement and Morphological Properties of Carbon Codoped GaN:Er

1999 ◽  
Vol 595 ◽  
Author(s):  
M.E Overberg ◽  
C.R. Abernathy ◽  
S. J. Pearton ◽  
R. G. Wilson ◽  
J. M. Zavada
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Film Surface ◽  
Solubility Limit ◽  
Morphological Properties ◽  
Nonradiative Recombination ◽  
Force Microscopy ◽  
Gas Source ◽  
Atomic Force ◽  
Photoluminescence Enhancement

AbstractThe surface morphology and the room temperature 1.54 µm photoluminescence (PL) intensity from GaN:Er grown by gas source molecular beam epitaxy have been investigated as a function of C concentration as introduced by CBr4. Similar to previous results with increasing Er level, increasing the C concentration initially improved the surface smoothness as measured by atomic force microscopy (AFM) and scanning electron microscopy (SEM), with RMS roughness improving by a factor of seven over undoped GaN. The PL also improved dramatically. However, the highest amounts of C investigated produced a decrease in the PL as well as a roughening of the film surface. These effects indicate that the GaN:Er had reached its C solubility limit, producing an increased amount of defect induced nonradiative recombination.

SiC Coatings Deposited by RF Magnetron Sputtering

2007 ◽  
Vol 280-283 ◽  
pp. 1309-1312 ◽  
Author(s):  
Hui Dong Tang ◽  
Shou Hong Tan ◽  
Zheng Ren Huang
Keyword(s):  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
Force Microscopy ◽  
Atomic Force ◽  
Amorphous Sic ◽  
Surface Morphologies ◽  
Sic Coatings

Amorphous SiC coatings were deposited by RF magnetron sputtering from a sintered SiC target onto Si(100) substrate at room temperature. The influence of RF power on the surface morphology and the RMS surface roughness of the resulting SiC coatings was studied by using atomic force microscopy. Two types of surface morphologies were obtained. The corresponding forming mechanisms were also discussed.

Measuring the Changes in InP Morphological and Electrical Specifications Caused by Oxygen Ion Implantation

2011 ◽  
Vol 264-265 ◽  
pp. 1312-1317
Author(s):  
A.H. Ramezani ◽  
M.R. Hantezadeh ◽  
M. Ghoranneviss ◽  
A.H. Sari
Keyword(s):  
Surface Roughness ◽  
Ion Implantation ◽  
Room Temperature ◽  
Implantation Dose ◽  
Force Microscopy ◽  
Oxygen Ions ◽  
Oxygen Ion ◽  
Atomic Force ◽  
Before And After ◽  
Oxygen Ion Implantation

This paper is the results of oxygen ion implantation on morphological and electrical properties of indium phosphate (InP) semiconductor wafers. The oxygen ions were implanted at 30 keV and various doses in the range between 5×10 15 to 5×10 17 ions/cm2 and at nearly room temperature. The changes in surface roughness and resistivity before and after the implantation is studied using atomic force microscopy (AFM) and four-point probes technique, respectively. The results show that the resistivity is depend on the ion implantation dose. In addition, the RMS roughness of implanted samples dramatically increases by accumulation of oxygen ion dose.

scholarly journals Photoluminescence Enhancement and Morphological Properties of Carbon Codoped GaN:Er

2000 ◽  
Vol 5 (S1) ◽  
pp. 810-816
Author(s):  
M.E Overberg ◽  
C.R. Abernathy ◽  
S. J. Pearton ◽  
R. G. Wilson ◽  
J. M. Zavada
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Film Surface ◽  
Solubility Limit ◽  
Morphological Properties ◽  
Nonradiative Recombination ◽  
Force Microscopy ◽  
Gas Source ◽  
Atomic Force ◽  
Photoluminescence Enhancement

The surface morphology and the room temperature 1.54 µm photoluminescence (PL) intensity from GaN:Er grown by gas source molecular beam epitaxy have been investigated as a function of C concentration as introduced by CBr4. Similar to previous results with increasing Er level, increasing the C concentration initially improved the surface smoothness as measured by atomic force microscopy (AFM) and scanning electron microscopy (SEM), with RMS roughness improving by a factor of seven over undoped GaN. The PL also improved dramatically. However, the highest amounts of C investigated produced a decrease in the PL as well as a roughening of the film surface. These effects indicate that the GaN:Er had reached its C solubility limit, producing an increased amount of defect induced nonradiative recombination.

Sign in / Sign up

Export Citation Format

Share Document