Anisotropic defect distribution in ZnSe/ZnS epitaxial layers grown by metalorganic vapor‐phase epitaxy on (001)‐oriented GaAs

1989 ◽  
Vol 66 (1) ◽  
pp. 129-136 ◽  
Author(s):  
P. D. Brown ◽  
G. J. Russell ◽  
J. Woods
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Epitaxial Layers ◽  
Defect Distribution

Propriétés électriques de l'arséniure de gallium dopé à l'étain, déposé par épitaxie en phase vapeur à partir d'organometalliques

1985 ◽  
Vol 63 (6) ◽  
pp. 670-674 ◽  
Author(s):  
A. P. Roth ◽  
D. Beckett ◽  
V. S. Sundaram ◽  
R. Yakimova
Keyword(s):  
Vapor Phase ◽  
Carrier Mobility ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Epitaxial Layers ◽  
Phase Vapeur

The carrier mobility has been measured between 10 and 300 K in epitaxial layers of Sn-doped GaAs grown by metalorganic vapor-phase epitaxy (MOVPE). Experimental and calculated values are compared to obtain the compensation ratios. It is shown that above 77 K the experimental mobility can be calculated in a satisfactory way only by including scattering by localized potential centers.

Properties of (Ga0.47In0.53)As epitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) using alternative arsenic precursors

1997 ◽  
Vol 170 (1-4) ◽  
pp. 155-160 ◽  
Author(s):  
H. Protzmann ◽  
F. Höhnsdorf ◽  
Z. Spika ◽  
W. Stolz ◽  
E.O. Göbel ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Epitaxial Layers
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