Erratum: ‘‘Inhomogeneous strain relaxation and defect distribution of ZnTe layers deposited on (110)GaAs by metalorganic vapor phase epitaxy’’ [J. Appl. Phys. 78, 229 (1995)]

N. Lovergine; F. Liaci; J.‐D. Ganière; G. Leo; A. V. Drigo; F. Romanto; A. M. Mancini; L. Vasanelli

doi:10.1063/1.362719

Erratum: ‘‘Inhomogeneous strain relaxation and defect distribution of ZnTe layers deposited on (110)GaAs by metalorganic vapor phase epitaxy’’ [J. Appl. Phys. 78, 229 (1995)]

Journal of Applied Physics ◽

10.1063/1.362719 ◽

1996 ◽

Vol 79 (1) ◽

pp. 562-562 ◽

Cited By ~ 4

Author(s):

N. Lovergine ◽

F. Liaci ◽

J.‐D. Ganière ◽

G. Leo ◽

A. V. Drigo ◽

...

Keyword(s):

Vapor Phase ◽

Strain Relaxation ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Defect Distribution ◽

Inhomogeneous Strain

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Inhomogeneous strain relaxation and defect distribution of ZnTe layers deposited on (100)GaAs by metalorganic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.360656 ◽

1995 ◽

Vol 78 (1) ◽

pp. 229-235 ◽

Cited By ~ 20

Author(s):

N. Lovergine ◽

L. Liaci ◽

J.‐D. Ganière ◽

G. Leo ◽

A. V. Drigo ◽

...

Keyword(s):

Vapor Phase ◽

Strain Relaxation ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Defect Distribution ◽

Inhomogeneous Strain

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Investigations on strain relaxation of ZnSxSe1−x layers grown by metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00722-1 ◽

1997 ◽

Vol 172 (1-2) ◽

pp. 64-74 ◽

Cited By ~ 6

Author(s):

Marcus J. Kastner ◽

Gabriella Leo ◽

Doris Brunhuber ◽

Andreas Rosenauer ◽

Herbert Preis ◽

...

Keyword(s):

Vapor Phase ◽

Strain Relaxation ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy

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Anisotropic defect distribution in ZnSe/ZnS epitaxial layers grown by metalorganic vapor‐phase epitaxy on (001)‐oriented GaAs

Journal of Applied Physics ◽

10.1063/1.343891 ◽

1989 ◽

Vol 66 (1) ◽

pp. 129-136 ◽

Cited By ~ 13

Author(s):

P. D. Brown ◽

G. J. Russell ◽

J. Woods

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Epitaxial Layers ◽

Defect Distribution

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Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures

Journal of Applied Physics ◽

10.1063/1.4824284 ◽

2013 ◽

Vol 114 (13) ◽

pp. 133706 ◽

Cited By ~ 1

Author(s):

M. Baldini ◽

E. Gombia ◽

A. Parisini ◽

C. Ghezzi ◽

M. Gorni

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Admittance Spectroscopy ◽

Defect Distribution

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Occurrence of cubic GaN and strain relaxation in GaN buffer layers grown by low-pressure metalorganic vapor phase epitaxy on (0001) sapphire substrates

Applied Physics Letters ◽

10.1063/1.122979 ◽

1999 ◽

Vol 74 (5) ◽

pp. 661-663 ◽

Cited By ~ 13

Author(s):

Lisen Cheng ◽

Kuan Zhou ◽

Ze Zhang ◽

Guoyi Zhang ◽

Zhijian Yang ◽

...

Keyword(s):

Vapor Phase ◽

Strain Relaxation ◽

Low Pressure ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Buffer Layers ◽

Sapphire Substrates ◽

Cubic Gan

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Impact of metalorganic vapor phase epitaxy growth conditions on compressive strain relaxation in polar III-nitride heterostructures

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab06b7 ◽

2019 ◽

Vol 58 (SC) ◽

pp. SC1017 ◽

Cited By ~ 1

Author(s):

Mikhail E. Rudinsky ◽

Anna V. Lobanova ◽

Sergey Yu. Karpov ◽

Roman A. Talalaev

Keyword(s):

Vapor Phase ◽

Strain Relaxation ◽

Compressive Strain ◽

Growth Conditions ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy

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Density functional theory study on surface adsorptions in AlN metalorganic vapor phase epitaxy process

Applied Surface Science ◽

10.1016/j.apsusc.2020.148773 ◽

2021 ◽

Vol 544 ◽

pp. 148773

Author(s):

Peng Lin ◽

Nannan Niu ◽

Ran Zuo ◽

Yulong Fang ◽

Zhihong Feng

Keyword(s):

Density Functional Theory ◽

Vapor Phase ◽

Density Functional ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Density Functional Theory Study ◽

Functional Theory

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Selective-area growth and characterization of cubic GaN grown by metalorganic vapor phase epitaxy

Thin Solid Films ◽

10.1016/j.tsf.2020.138125 ◽

2020 ◽

Vol 709 ◽

pp. 138125

Author(s):

Pattana Suwanyangyaun ◽

Sakuntam Sanorpim ◽

Kentaro Onabe

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Selective Area ◽

Area Growth ◽

Cubic Gan

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Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(91)90469-l ◽

1991 ◽

Vol 107 (1-4) ◽

pp. 268-273 ◽

Cited By ~ 17

Author(s):

M.A. Tischler ◽

R.M. Potemski ◽

T.F. Kuech ◽

F. Cardone ◽

M.S. Goorsky ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Acceptor Doping

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Study of the gas phase chemistry in the silicon doping of GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine as the group V source

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90130-9 ◽

1994 ◽

Vol 135 (3-4) ◽

pp. 423-433 ◽

Cited By ~ 13

Author(s):

J.M. Redwing ◽

T.F. Kuech ◽

D. Saulys ◽

D.F. Gaines

Keyword(s):

Gas Phase ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Silicon Doping ◽

Group V ◽

Gas Phase Chemistry ◽

Phase Chemistry

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