Interference filters using indium phosphide‐based epitaxial layers grown by metalorganic vapor phase epitaxy

1989 ◽  
Vol 55 (17) ◽  
pp. 1713-1714 ◽  
Author(s):  
S. Ritchie ◽  
P. C. Spurdens ◽  
N. P. Hewett ◽  
M. R. Aylett
Keyword(s):  
Indium Phosphide ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Epitaxial Layers ◽  
Interference Filters

Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy

2002 ◽  
Vol 66 (4) ◽  
Author(s):  
D. C. Law ◽  
Y. Sun ◽  
C. H. Li ◽  
S. B. Visbeck ◽  
G. Chen ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Propriétés électriques de l'arséniure de gallium dopé à l'étain, déposé par épitaxie en phase vapeur à partir d'organometalliques

1985 ◽  
Vol 63 (6) ◽  
pp. 670-674 ◽  
Author(s):  
A. P. Roth ◽  
D. Beckett ◽  
V. S. Sundaram ◽  
R. Yakimova
Keyword(s):  
Vapor Phase ◽  
Carrier Mobility ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Epitaxial Layers ◽  
Phase Vapeur

The carrier mobility has been measured between 10 and 300 K in epitaxial layers of Sn-doped GaAs grown by metalorganic vapor-phase epitaxy (MOVPE). Experimental and calculated values are compared to obtain the compensation ratios. It is shown that above 77 K the experimental mobility can be calculated in a satisfactory way only by including scattering by localized potential centers.

Properties of (Ga0.47In0.53)As epitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) using alternative arsenic precursors

1997 ◽  
Vol 170 (1-4) ◽  
pp. 155-160 ◽  
Author(s):  
H. Protzmann ◽  
F. Höhnsdorf ◽  
Z. Spika ◽  
W. Stolz ◽  
E.O. Göbel ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Epitaxial Layers
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