Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures

2013 ◽  
Vol 114 (13) ◽  
pp. 133706 ◽  
Author(s):  
M. Baldini ◽  
E. Gombia ◽  
A. Parisini ◽  
C. Ghezzi ◽  
M. Gorni
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Admittance Spectroscopy ◽  
Defect Distribution

Electrical Characterization of Magnesium-Doped Gallium Nitride Grown by Metalorganic Vapor Phase Epitaxy

1996 ◽  
Vol 423 ◽  
Author(s):  
J. W. Huang ◽  
H. Lu ◽  
J. G. Cederberg ◽  
I. Bhat ◽  
T. F. Kuech
Keyword(s):  
Activation Energy ◽  
Vapor Phase ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Admittance Spectroscopy ◽  
Ionization State ◽  
Frequency Dependent ◽  
Mg Doping

AbstractWe have applied frequency-dependent capacitance measurements and admittance spectroscopy on metalorganic vapor phase epitaxy GaN:Mg to study the electronic states associated with Mg doping. Samples with different Mg doping levels were grown and annealed in nitrogen. Lateral dot-and-ring Schottky diodes using Au/Ti were fabricated. After a 800 °C anneal, frequency-dependent measurements show that the capacitance is reduced at a higher frequency, most likely due to the inability of a deep center to maintain an equilibrium ionization state under a high frequency modulation. The net ionized acceptor concentrations was found to be greater at a higher Mg doping level. Admittance spectroscopy, in which the conductance is monitored as a function of temperature, verifies the existence of at least one impurity-related acceptor level with an activation energy of ∼ 140 meV. A reduction in the annealing temperature was found to lead to a lower net ionized acceptor concentration, as well as a higher activation energy.

Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

1991 ◽  
Vol 107 (1-4) ◽  
pp. 268-273 ◽  
Author(s):  
M.A. Tischler ◽  
R.M. Potemski ◽  
T.F. Kuech ◽  
F. Cardone ◽  
M.S. Goorsky ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Acceptor Doping

Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

2010 ◽  
Vol 97 (1) ◽  
pp. 013502 ◽  
Author(s):  
Kuo-Hua Chang ◽  
Jinn-Kong Sheu ◽  
Ming-Lun Lee ◽  
Shang-Ju Tu ◽  
Chih-Ciao Yang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy
Sign in / Sign up

Export Citation Format

Share Document