Effects of vacuum ultraviolet and ultraviolet irradiation on ultrathin hafnium-oxide dielectric layers on (100)Si as measured with electron-spin resonance

2010 ◽  
Vol 96 (19) ◽  
pp. 192904 ◽  
Author(s):  
H. Ren ◽  
S. L. Cheng ◽  
Y. Nishi ◽  
J. L. Shohet
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Ultraviolet Irradiation ◽  
Hafnium Oxide ◽  
Vacuum Ultraviolet ◽  
Dielectric Layers ◽  
Spin Resonance

Electron Spin Resonance Characterization of Defects at Interfaces in Stacks of Ultrathin High-κ Dielectric Layers on Silicon

2003 ◽  
Vol 786 ◽  
Author(s):  
A. L. Stesmans ◽  
V.V. Afanas'ev
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Dielectric Layers ◽  
Growth Standard ◽  
Spin Resonance ◽  
Dielectric Interfaces ◽  
Standard Quality

ABSTRACTElectron spin resonance (ESR) analysis of (100)Si/SiOx/ZrO2, (100)Si/Al2O3 and Si/HfO2 structures with nm-thin dielectric layers deposited by different chemical vapor deposition procedures reveals, after hydrogen detachment, the presence of the trivalent Si dangling-bond-type centers Pb0, Pb1 as prominent defects in all entities. This Pb0, Pb1 fingerprint, generally unique for the thermal (100)Si/SiO2 interface, indicates that the as-deposited (100)Si/metal oxides interface is basically Si/SiO2-like. Though sensitive to the deposition process, the Pb0 density is found to be substantially larger than in standard (100)Si/SiO2. As probed by the Pb- type center properties, the Si/dielectric interfaces of all structures are under enhanced (unrelaxed) stress, typical for low temperature Si/SiO2 growth. Standard quality thermal Si/SiO2 properties in terms of Pb signature may be approached by appropriate annealing (≥ 650°C) in vacuum in the case of (100)Si/SiOx/ZrO2. Yet, O2 ambient appears required for Si/Al2O3 and Si/HfO2. It appears that Si/high-κ metal oxide structures with device grade quality interfaces can be realized with sub-nm thin SiOx interlayers. The density of fast interface states closely matches the Pb0 density variations, suggesting the center as the dominant fast interface trap. They may be efficiently passivated in H2 at 400 °C.

The Roles of Several E′ Variants in Thermal Gate Oxide Reliability

1994 ◽  
Vol 338 ◽  
Author(s):  
John F. Conley ◽  
P.M. Lenahan ◽  
H.L. Evans ◽  
R.K. Lowry ◽  
T.J. Morthorst
Keyword(s):  
Thin Film ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Vacuum Ultraviolet ◽  
Charge Injection ◽  
Charge Trapping ◽  
Gate Oxide ◽  
Oxide Reliability ◽  
Spin Resonance ◽  
Thermally Grown

ABSTRACTWe combine electron spin resonance measurements with vacuum ultraviolet, ultraviolet, and corona bias charge injection schemes to examine the properties and charge trapping roles of three E′ variants in conventionally processed thermally grown thin film SiO2 on Si.

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