Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si

2003 ◽  
Vol 83 (16) ◽  
pp. 3407-3409 ◽  
Author(s):  
A. Y. Kang ◽  
P. M. Lenahan ◽  
J. F. Conley
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Spin Resonance ◽  
Trapped Electron

Electron Spin Resonance Study of Trapped Electron in 2‐Methyltetrahydrofuran Irradiated at 4°K

1972 ◽  
Vol 56 (8) ◽  
pp. 4238-4239 ◽  
Author(s):  
Hiroshi Yoshida ◽  
Masaaki Ogasawara ◽  
Tetsuo Warashina ◽  
Takenobu Higashimura
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Electron Spin Resonance Study ◽  
Spin Resonance ◽  
Trapped Electron ◽  
Spin Resonance Study

Effect of Dose on the Yield of Trapped Electrons in Aliphatic Amine Glasses

1973 ◽  
Vol 51 (16) ◽  
pp. 2801-2804 ◽  
Author(s):  
Toshiyasu Ito ◽  
Shoji Noda ◽  
Kenji Fueki ◽  
Zen-Ichiro Kuri
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Aliphatic Amine ◽  
Trapped Electrons ◽  
Electron Yield ◽  
Spin Resonance ◽  
Trapped Electron

An electron spin resonance (e.s.r.) and photoconductivity study has been made of the effect of dose on the yield of trapped electrons in -γ-irradiated aliphatic amine glasses at 77 °K. It is shown that the effect of dose on the trapped electron yield can be correlated with matrix polarity.

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