Deep‐level transient spectroscopy study ofn‐type GaAs epitaxial layers grown by close‐spaced vapor transport

1989 ◽  
Vol 65 (3) ◽  
pp. 1126-1129 ◽  
Author(s):  
G. Massé ◽  
J. M. Lacroix ◽  
M. F. Lawrence
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Vapor Transport ◽  
Epitaxial Layers ◽  
Spectroscopy Study ◽  
Transient Spectroscopy

Midgap electron traps in n-type GaAs epitaxial layers grown by the close-spaced vapor transport technique

1991 ◽  
Vol 69 (3-4) ◽  
pp. 407-411 ◽  
Author(s):  
T. Bretagnon ◽  
A. Jean ◽  
P. Silvestre ◽  
S. Bourassa ◽  
R. Le Van Mao ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Emission Rate ◽  
Deep Level ◽  
Vapor Transport ◽  
Epitaxial Layers ◽  
Spectroscopy Technique ◽  
Electron Traps ◽  
Si Doped ◽  
Transient Spectroscopy ◽  
Transport Technique

The deep-level transient spectroscopy technique was applied to the study of deep electron traps existing in n-type GaAs epitaxial layers that were prepared by the close-spaced vapor transport technique using three kinds of sources (semi-insulator-undoped, Zn-doped and Si-doped GaAs). Two midgap electron traps labelled ELCS1 and EL2 were observed in all layers regardless of the kind of source used. In addition, the effect of the electric field on the emission rate of ELCS1 is discussed and its identification to ETX2 and EL12 is suggested.

Deep Level Transient Spectroscopy Study Of High-Temperature Aluminum Implanted 6H-SiC

1996 ◽  
Vol 442 ◽  
Author(s):  
Yuri A. Stotski ◽  
Igor O. Usov ◽  
Alexander V. Suvorov
Keyword(s):  
High Temperature ◽  
Carrier Concentration ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Epitaxial Layers ◽  
Spectroscopy Study ◽  
Four Levels ◽  
Transient Spectroscopy ◽  
The Relationship

AbstractDeep levels in 6H-SiC wafers implanted with Al+ ions at high-temperature were studied using current deep level transient spectroscopy (iDLTS). Aluminum was implanted at a temperature of 1800 °C with an energy of 40 keV and a dose of 2 × 1016 cm−2 into n-type epitaxial layers with different carrier concentration. Four levels were found, at Ec−0.12, Ec−0.13, Ec−1.06 and Ev+0.35 eV. It was established that modification of the carrier concentration in original ntype 6H-SiC epitaxial layers affects the deep levels concentration. The relationship between the thickness of the space charge region and the relative deep level concentration was considered.

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

Deep-Level Transient Spectroscopy Study on Double Implanted N(+)-p and p(+)-n 4H-SiC Diodes

2004 ◽  
Author(s):  
Souvick Mitra ◽  
Mulpuri V. Rao ◽  
N. Papanicolaou ◽  
K. A. Jones ◽  
M. Derenge
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Study ◽  
Transient Spectroscopy

scholarly journals Hydrostatic-Pressure Deep Level Transient Spectroscopy Study of the Heteroantisite Antimony Level in GaAs

1992 ◽  
Vol 82 (5) ◽  
pp. 841-844
Author(s):  
A. Babiński ◽  
J. Przybytek ◽  
M. Baj ◽  
P. Omling ◽  
L. Samuelson ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Study ◽  
Transient Spectroscopy
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