A simple technique for determining the interface‐trap distribution of submicron metal‐oxide‐semiconductor transistors by the charge pumping method

1989 ◽  
Vol 65 (3) ◽  
pp. 1358-1360 ◽  
Author(s):  
F. Hofmann ◽  
W. H. Krautschneider
Keyword(s):  
Metal Oxide ◽  
Simple Technique ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Trap ◽  
Charge Pumping

scholarly journals Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

2014 ◽  
Vol 104 (13) ◽  
pp. 131605 ◽  
Author(s):  
Thenappan Chidambaram ◽  
Dmitry Veksler ◽  
Shailesh Madisetti ◽  
Andrew Greene ◽  
Michael Yakimov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Hall Method
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