Material properties of InP‐on‐Si grown by low‐pressure organometallic vapor‐phase epitaxy

1989 ◽  
Vol 65 (3) ◽  
pp. 1213-1216 ◽  
Author(s):  
D. S. Wuu ◽  
H. H. Tung ◽  
R. H. Horng ◽  
M. K. Lee
Keyword(s):  
Vapor Phase ◽  
Material Properties ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy

Selective growth of InP on patterned, nonplanar InP substrates by low-pressure organometallic vapor phase epitaxy

1990 ◽  
Vol 19 (11) ◽  
pp. 1313-1317 ◽  
Author(s):  
Rong -Ting Huang ◽  
Ching -Long Jiang ◽  
Ami Appelbaum ◽  
Daniel Renner ◽  
Stanley W. Zehr
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Selective Growth ◽  
Organometallic Vapor Phase Epitaxy ◽  
Inp Substrates

Heavily dopedp‐GaAs grown by low‐pressure organometallic vapor phase epitaxy using liquid CCl4

1992 ◽  
Vol 72 (5) ◽  
pp. 2063-2065 ◽  
Author(s):  
L. W. Yang ◽  
P. D. Wright ◽  
V. Eu ◽  
Z. H. Lu ◽  
A. Majerfeld
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy

multiquantum barrier structures prepared by low-pressure organometallic vapor phase epitaxy

1995 ◽  
Vol 38 (12) ◽  
pp. 2001-2004 ◽  
Author(s):  
Hung-Pin Shiao ◽  
Chi-Yu Wang ◽  
Yuan-Kuang Tu ◽  
Wei Lin ◽  
Ching-Ting Lee
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy
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