Interface capacitance in metal‐semiconductor junctions

1989 ◽  
Vol 65 (9) ◽  
pp. 3560-3567 ◽  
Author(s):  
Xu Wu ◽  
Edward S. Yang
Keyword(s):  
Interface Capacitance

The Negative Interface Capacitance and Its Anisotropy in Magnetic Tunnel Junctions

2021 ◽  
pp. 168723
Author(s):  
Xinping Yao ◽  
Kun Sun ◽  
Yueguo Hu ◽  
Xiaotian Qiu ◽  
Minhui Ji ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Interface Capacitance

scholarly journals Freezing Potentials and Currents in Potassium Fluoride Solutions at Constant Growth Rates

1973 ◽  
Vol 12 (66) ◽  
pp. 483-499 ◽  
Author(s):  
T. O’D. Hanley ◽  
A. H. Weber
Keyword(s):  
Growth Rate ◽  
Charge Transfer ◽  
Growth Rates ◽  
Potassium Fluoride ◽  
Distribution Coefficients ◽  
Interface Resistance ◽  
Apparent Diffusion Coefficients ◽  
Apparent Diffusion ◽  
Interface Capacitance ◽  
Constant Growth

The Workman–Reynolds effect was studied in the growth of ice on a monocrystalline seed, at constant growth rates and under steady-state conditions, from KF solutions at concentrations from 2 × 10−5 to 10 × 10−5 Normal. Freezing potentials increased with growth rate to a maximum of 12 V at 11.2 μm/s. Discharge currents through a 105 Ω shunt generally increased with freezing rate until a maximum of 1.5 μA at 11.2 μm/s. The charge transfer decreased with growth rate to 200 μC at 10.3 μm/s and then reached a maximum of 850 μC at 11.2 μm/s. Apparent diffusion coefficients of about 2 × 10−3 mm2/s increased slowly with growth rate until a rapid increase began, apparently associated with interface breakdown. Distribution coefficients of the order of 10−3, calculated from a criterion for constitutional supercooling, increased with concentration. Parameters for LeFebre’s model of the interface showed an interface thickness of about 6 mm, an interface capacitance near one-half pF/mm2, and an interface resistance of about 6 × 104 Ω/mm2. Several empirical relations between these quantities were disclosed. Comparison with values obtained for KC1 solutions with the same freezing cell shows that the KF solutions yielded higher values of freezing potential, charge transfer, and distribution coefficient, and lower values of diffusion coefficient, interface capacitance, and interface resistance.

Impedimetric approach for monitoring bacterial cultures based on the changes in the magnitude of the interface capacitance

2010 ◽  
Vol 2 (8) ◽  
pp. 1036 ◽  
Author(s):  
Xavier Muñoz-Berbel ◽  
Núria Vigués ◽  
Montserrat Cortina-Puig ◽  
Roger Escudé ◽  
Cristina García-Aljaro ◽  
...  
Keyword(s):  
Bacterial Cultures ◽  
Interface Capacitance

scholarly journals New Approaches to the Direct Measurement of Capacitance

1977 ◽  
Vol 4 (1) ◽  
pp. 37-42 ◽  
Author(s):  
M. S. Raven ◽  
D. Raven
Keyword(s):  
Direct Measurement ◽  
New Methods ◽  
New Approaches ◽  
Measuring Techniques ◽  
Interface Capacitance

The limitations of conventional a.c. capacitance measuring techniques, for such measurements as MIS interface capacitance and measurements of large value electrolytics, has lead to a demand for new methods of capacitance measuring. This article reviews two new approaches which are presently being employed – the quadrature P.S.D. technique and time encoded ballistic techniques.

Contribution of interface capacitance to the electric-field breakdown in thin-film Al–AlOx–Al capacitors

2003 ◽  
Vol 83 (12) ◽  
pp. 2417-2419 ◽  
Author(s):  
Guneeta Singh-Bhalla ◽  
Xu Du ◽  
Arthur F. Hebard
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Interface Capacitance

Investigation of SiO2-SiC Interface by High-Resolution Transmission Electron Microscope

2006 ◽  
Vol 527-529 ◽  
pp. 975-978
Author(s):  
Sima Dimitrijev ◽  
Ji Sheng Han ◽  
Jin Zou
Keyword(s):  
High Resolution ◽  
Carbon Accumulation ◽  
Carbon Clusters ◽  
Transmission Electron ◽  
Apparent Inconsistency ◽  
Interface Capacitance ◽  
Capacitance Transient ◽  
Atomically Flat ◽  
Transient Measurements ◽  
Rule Out

High-resolution transmission electron microscopy (HR TEM) reveals an atomically flat SiC surface after oxidation in either NO or dry O2 ambients. This reopens the question of the origin of the electronically active defects at the SiO2–SiC interface, whose density remains orders of magnitude higher than in the SiO2–Si interface. Capacitance-transient measurements, analysed in this paper, demonstrate that the dominant electronically active defects are in the oxide at tunneling distances from the SiC surface (near-interface traps). The HR TEM results cannot rule out that these traps are related to carbon/oxygen bonds or even nanometer-sized carbon clusters, which resolves the apparent inconsistency with the earlier experimental evidence of carbon accumulation at (or near) the SiO2–SiC interface.

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