Contribution of interface capacitance to the electric-field breakdown in thin-film Al–AlOx–Al capacitors

2003 ◽  
Vol 83 (12) ◽  
pp. 2417-2419 ◽  
Author(s):  
Guneeta Singh-Bhalla ◽  
Xu Du ◽  
Arthur F. Hebard
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Interface Capacitance

Electric Field Control of the Magnetic Weyl Fermion in an Epitaxial SrRuO 3 (111) Thin Film

2021 ◽  
pp. 2101316
Author(s):  
Weinan Lin ◽  
Liang Liu ◽  
Qing Liu ◽  
Lei Li ◽  
Xinyu Shu ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Field Control ◽  
Weyl Fermion

Preparation and electrical properties of γ form poly(vinylidene fluoride) thin film by vapour deposition in the presence of an electric field

1991 ◽  
Vol 202 (2) ◽  
pp. 213-220 ◽  
Author(s):  
Akiyoshi Takeno ◽  
Norimasa Okui ◽  
Tetsuji Kitoh ◽  
Michiharu Muraoka ◽  
Susumu Umemoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Electric Field ◽  
Vapour Deposition ◽  
Vinylidene Fluoride ◽  
Poly Vinylidene Fluoride

scholarly journals Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Oxygen Content ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Drain Side ◽  
Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

Enhanced Electrical Properties of PVDF Thin Film by Addition of NaCl by Near-Electric-Field 3D Printing

2021 ◽  
Author(s):  
Andong Wang ◽  
Caifeng Chen ◽  
Jilong Qian ◽  
Fan Yang ◽  
Lu Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
3D Printing ◽  
Electric Field

GENERATION OF ULTRASHORT ELECTRON BUNCHES IN NANOSTRUCTURES BY FEMTOSECOND LASER PULSES

2007 ◽  
Vol 17 (03) ◽  
pp. 571-576
Author(s):  
A. GLADUN ◽  
V. LEIMAN ◽  
A. ARSENIN ◽  
O. MANNOUN ◽  
V. TARAKANOV
Keyword(s):  
Thin Film ◽  
Laser Radiation ◽  
Femtosecond Laser ◽  
Electric Field ◽  
Surface Plasmon ◽  
Laser Pulses ◽  
Photoelectric Effect ◽  
Femtosecond Laser Pulses ◽  
Electron Bunches ◽  
Internal Photoelectric Effect

We present numerical investigation of anomalous internal photoelectric effect which is realized in thin film (< 100 nm) structures by surface plasmon (SP) excitation and its interaction with primary laser radiation. SP electric field gain and electron temperature in the SP field have been calculated.

Electric field-assisted bipolar charge spouting in organic thin-film diodes

2004 ◽  
Vol 84 (3) ◽  
pp. 440-442 ◽  
Author(s):  
Tetsuo Tsutsui ◽  
Masaya Terai
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Organic Thin Film ◽  
Bipolar Charge
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