scholarly journals Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

AIP Advances ◽  
2015 ◽  
Vol 5 (4) ◽  
pp. 047136 ◽  
Author(s):  
Syed Mukulika Dinara ◽  
Sanjay Kr. Jana ◽  
Saptarsi Ghosh ◽  
Partha Mukhopadhyay ◽  
Rahul Kumar ◽  
...  
Keyword(s):  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Interface Capacitance ◽  
Dimensional Electron Gas ◽  
Gan Heterostructure

Electroreflectance of the AlGaN/GaN heterostructure and two-dimensional electron gas

2002 ◽  
Vol 80 (24) ◽  
pp. 4549-4551 ◽  
Author(s):  
S. R. Kurtz ◽  
A. A. Allerman ◽  
D. D. Koleske ◽  
G. M. Peake
Keyword(s):  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas ◽  
Gan Heterostructure

Magnetotransport Investigations of Two-Dimensional Electron Gas for AlGaN/GaN Heterostructure

2014 ◽  
Vol 1058 ◽  
pp. 132-135
Author(s):  
Meng Lv ◽  
Guo Lin Yu ◽  
Yong Gang Xu ◽  
Tie Lin ◽  
Ning Dai ◽  
...  
Keyword(s):  
Electron Gas ◽  
Electron Interaction ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Weak Antilocalization ◽  
Two Dimensional Electron Gas ◽  
Sdh Oscillations ◽  
Dimensional Electron Gas ◽  
Gan Heterostructure

Magnetotransport properties are investigated in two-dimensional electron gas (2DEG) of AlGaN/GaN heterostructure, including the Drude conductance, the Shubnikov-de Haas (SdH) oscillations and the change with temperature, the electron-electron interaction (EEI) and the change with temperature, the weak antilocalization (WAL) and the change with temperature etc.

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