Electrical effects of atomic hydrogen incorporation in GaAs‐on‐Si

1989 ◽  
Vol 65 (1) ◽  
pp. 347-353 ◽  
Author(s):  
J. M. Zavada ◽  
S. J. Pearton ◽  
R. G. Wilson ◽  
C. S. Wu ◽  
Michael Stavola ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Hydrogen Incorporation ◽  
Gaas On Si

scholarly journals Hydrogen Incorporation During Deposition of a-Si:H From an Intense Source of SiH3

1997 ◽  
Vol 467 ◽  
Author(s):  
M. C. M. Van De Sanden ◽  
R. J. Severens ◽  
W. M. M. Kessels ◽  
F. Van De Pas ◽  
L. Van Ijzendoorn ◽  
...  
Keyword(s):  
Exchange Reaction ◽  
Atomic Hydrogen ◽  
Isotope Labeling ◽  
Hydrogen Incorporation ◽  
Silyl Radical ◽  
Intense Source

ABSTRACTThe incorporation of hydrogen during the fast deposition of a-Si:H from an expanding thermal arc is investigated by means of isotope labeling of the precursor gases silane and hydrogen. It is found that hydrogen in a-Si.H originates dominantly from the silyl radical. A small fraction of the hydrogen in a-Si:H is due to exchange reaction of atomic hydrogen in the plasma with hydrogen chemisorbed on the surface during growth.

Enhancement of Boron Activation in Shallow Junctions by Hydrogen

2004 ◽  
Vol 810 ◽  
Author(s):  
A. Vengurlekar ◽  
S. Ashok ◽  
C. E. Kalnas ◽  
N. D. Theodore
Keyword(s):  
Atomic Hydrogen ◽  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Cluster Formation ◽  
Relaxation Effect ◽  
Lattice Relaxation ◽  
Hydrogen Incorporation ◽  
Device Scaling ◽  
Shallow Junctions ◽  
Lower Temperature

ABSTRACTThe ability to activate greater amounts of dopants at lower temperatures is a persistent contingency in the continual drive for device scaling in Si microelectronics. We report on the effect of incorporating atomic hydrogen on the activation of implanted boron in shallow junctions. Hydrogen incorporation into the sample was carried out by exposure to an electron cyclotron resonance (ECR) hydrogen plasma. Enhanced activation was observed in hydrogenated samples for post-implantation annealing temperatures of 450°C and below, as measured by spreading resistance profilometry, and confirmed by identical boron atomic profile in hydrogenated and unhydrogenated samples. The enhancement in boron activation at lower temperature is attributed to the creation of vacancies in the boron-implanted region, the lattice-relaxation effect by the presence of atomic hydrogen, and the effect of atomic hydrogen on boron-interstitial cluster formation.

Hydrogen, Acceptors, and H-Acceptor Complexes in GaN

1995 ◽  
Vol 395 ◽  
Author(s):  
Andrea Bosin ◽  
Vincenzo Fiorentini ◽  
David Vanderbilt
Keyword(s):  
Complex Formation ◽  
Ab Initio Calculations ◽  
Ab Initio ◽  
Atomic Hydrogen ◽  
Formation Energy ◽  
Impurity Level ◽  
Mbe Growth ◽  
Hydrogen Incorporation ◽  
Shallow Impurity ◽  
Mg Doped

ABSTRACTWe present ab-initio calculations on energetics and geometries of atomic hydrogen, of several candidate acceptors, and of H-acceptor complexes in wurtzite GaN For the H-Mg complex in Mg-doped GaN, we calculate the vibrational frequencies of H. Hydrogen is found to be a negative-U center. H-acceptor complex formation is always exothermic. Substitutional Be has a low formation energy and a shallow impurity level, which makes it a good candidate for p-doping in MBE growth. CN appears not to be shallow. Atomic hydrogen incorporation in undoped GaN is disfavored in an H2 atmosphere; it becomes favorable in p and n-type conditions in atomic H environments.

Hydrogenation of Undoped and Nitrogen Doped Cdte and ZnSe Grown by Molecular Beam Epitaxy

1998 ◽  
Vol 513 ◽  
Author(s):  
L. S. Hirsch ◽  
S. D. Setzler ◽  
A. J. Ptak ◽  
N. C. Giles ◽  
T. H. Myers
Keyword(s):  
Molecular Beam Epitaxy ◽  
Preliminary Data ◽  
Atomic Hydrogen ◽  
Molecular Beam ◽  
Hydrogen Incorporation ◽  
Nitrogen Doped ◽  
Hydrogen Flux ◽  
Hydrogen Interaction ◽  
Significant Concentration ◽  
Residual Impurities

ABSTRACTHydrogen incorporation in both undoped and nitrogen-doped CdTe and ZnSe is investigated. Evidence for a strong nitrogen-hydrogen interaction is presented. Preliminary data indicate that the growth of CdTe and ZnSe under an atomic hydrogen flux results in a significant concentration of paramagnetic defects possibly accompanied by enhanced auto-doping from residual impurities.

Giant conductivity enhancement of ferrite insulators induced by atomic hydrogen

2015 ◽  
Vol 17 (19) ◽  
pp. 13112-13116 ◽  
Author(s):  
Qing-Yun Xiang ◽  
Yu Wang ◽  
Shi-Yu Li ◽  
Lan-Hua Wang ◽  
Li-Bin Mo ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Hydrogen Incorporation ◽  
Conductivity Enhancement

Large conductivity enhancements in ferrite induced by atomic hydrogen and kinetics correlations between the adsorption of atomic hydrogen, hydrogen incorporation and conductivity enhancement are established.

Hydrogen Incorporation into CU-III-VI2 Chalcopyrite Semiconductors

1998 ◽  
Vol 513 ◽  
Author(s):  
K. Otte ◽  
G. Lippold ◽  
D. Grambole ◽  
F. Herrmann ◽  
H. Schlemm ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Radiative Recombination ◽  
Ion Beam ◽  
High Vacuum ◽  
Secondary Phase ◽  
Low Energy ◽  
Hydrogen Incorporation ◽  
Chalcopyrite Semiconductors ◽  
Defect Passivation ◽  
Similar Temperature

ABSTRACTWe implanted at 300 eV into Cu-chalcopyrite semiconductors at temperatures between 50°C and 300°C. The surface chemistry is similar to the previously reported behavior of CuInS2 implanted with a H2+, H+ low energy ion beam [1] with respect to secondary phase etching. We also found an increase of radiative recombination (photoluminescence), which had been attributed to defect passivation and, hence, as an indicator of hydrogen incorporation [2]. Under the 300 eV implantation conditions, however, we observed neither a hydrogen concentration in a few hundred nm surface range exceeding the NRA detection limit of about 1×1019 cm-3 nor a pronounced stoichiometry variation in the ternary material, as proved by Raman measurements.We conclude, therefore, that a 300 eV implantation introduces significantly less atomic hydrogen into the volume of the sample than previously reported for other beam compositions under similar temperature and current density conditions. This could be a result of the very low energy of less than 100 eV which can be expected for atomic H produced by dissociation of 300 eV at the surface, making the instant out-diffusion into the high vacuum of the implantation chamber a favored process.

Sign in / Sign up

Export Citation Format

Share Document