Enhancement of Boron Activation in Shallow Junctions by Hydrogen

2004 ◽  
Vol 810 ◽  
Author(s):  
A. Vengurlekar ◽  
S. Ashok ◽  
C. E. Kalnas ◽  
N. D. Theodore
Keyword(s):  
Atomic Hydrogen ◽  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Cluster Formation ◽  
Relaxation Effect ◽  
Lattice Relaxation ◽  
Hydrogen Incorporation ◽  
Device Scaling ◽  
Shallow Junctions ◽  
Lower Temperature

ABSTRACTThe ability to activate greater amounts of dopants at lower temperatures is a persistent contingency in the continual drive for device scaling in Si microelectronics. We report on the effect of incorporating atomic hydrogen on the activation of implanted boron in shallow junctions. Hydrogen incorporation into the sample was carried out by exposure to an electron cyclotron resonance (ECR) hydrogen plasma. Enhanced activation was observed in hydrogenated samples for post-implantation annealing temperatures of 450°C and below, as measured by spreading resistance profilometry, and confirmed by identical boron atomic profile in hydrogenated and unhydrogenated samples. The enhancement in boron activation at lower temperature is attributed to the creation of vacancies in the boron-implanted region, the lattice-relaxation effect by the presence of atomic hydrogen, and the effect of atomic hydrogen on boron-interstitial cluster formation.

Mechanism of Dopant Activation Enhancement in Shallow Junctions by Hydrogen

2005 ◽  
Vol 864 ◽  
Author(s):  
A. Vengurlekar ◽  
S. Ashok ◽  
Christine. E. Kalnas ◽  
H. Win Ye
Keyword(s):  
Atomic Hydrogen ◽  
Annealing Temperature ◽  
Process Integration ◽  
Hydrogen Plasma ◽  
Cmos Technology ◽  
Dopant Activation ◽  
Enhanced Diffusion ◽  
Device Scaling ◽  
High K ◽  
Shallow Junctions

AbstractThe ability to activate greater amounts of dopants is a significant challenge for the realization of shallow junctions in device scaling for Si CMOS technology. Dopant activation is difficult to achieve in shallow junctions due to higher concentrations of dopants and possible formation of dopant clusters. The high temperatures currently used to activate dopants result in increased junction depth and process integration issues with high-k dielectrics. However, lowering the annealing temperature results in lesser dopant activation and problems with transient enhanced diffusion. Our previous work reported on the enhancement of activation in boron implanted at a dose of 5E14/cm2 and annealed at temperatures of 450 °C and below, by the incorporation of atomic hydrogen introduced by exposing the substrate to a hydrogen plasma at 250 °C. In this work, further experiments have been carried out to get a better understanding of the mechanisms responsible for boron activation enhancement. Hydrogen-related activation was studied in boron, phosphorus and antimony implanted samples. The experimental results shed new light on the interactions among atomic hydrogen, point defects and dopants.

Microstructural Analysis of Copper Foil Etched and Annealed in ECR Plasma Reactor

2022 ◽  
Vol 1048 ◽  
pp. 121-129
Author(s):  
Samit Karmakar ◽  
Soumik Kumar Kundu ◽  
Aditya Mukherjee ◽  
Sujit Kumar Bandyopadhyay ◽  
Satyaranjan Bhattacharyya ◽  
...  
Keyword(s):  
Copper Foil ◽  
Electron Cyclotron Resonance ◽  
Plasma Reactor ◽  
Hydrogen Plasma ◽  
Microstructural Analysis ◽  
Chemical Vapour ◽  
Working Pressure ◽  
Ecr Plasma ◽  
Average Grain Size ◽  
Xrd Studies

Microstructural analysis of commercially available cold-rolled polycrystalline copper foil, etched and annealed in an in-house developed Electron Cyclotron Resonance (ECR) Plasma Enhanced Chemical Vapour Deposition (PE-CVD) reactor, have been carried out using x-ray diffraction (XRD) studies. The annealing experiments were carried out under a vacuum environment, keeping the working pressure of the reactor at 50×10-3 mbar, for three different time spans of 30 mins, 45 mins and 1 hour at 823 K (550 °C) and 923 K (650 °C) respectively in presence of hydrogen plasma. The XRD studies reveal the significance of annealing time at two different temperatures for the determination of physical and microstructural parameters such as the average grain size and micro-strain in copper lattice by Williamson-Hall (W-H) method.

GaAs Epitaxial Growth by ECR-MBE

1991 ◽  
Vol 223 ◽  
Author(s):  
Naoto Kondo ◽  
Yasushi Nanishi ◽  
Tomohiro Shibata ◽  
Norio Yamamoto ◽  
Masatomo Fujimoto
Keyword(s):  
Low Temperatures ◽  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Surface Cleaning ◽  
Selective Area Growth ◽  
Desorption Process ◽  
Si Substrates ◽  
Selective Area ◽  
Area Growth ◽  
A New Technique

ABSTRACTElectron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE) is a new technique for GaAs growth. This paper describes surface cleaning of GaAs and Si substrates at fairly low temperatures using hydrogen plasma, low temperature growth of GaAs on both substrates, and selective area growth of GaAs on both substrates partially covered with a silicon nitride (SiN) mask. The ability to clean and grow at low temperatures-assumed to be a benefit of using energetic particles—should permit us to grow layers on processed GaAs and/or Si substrates. The electrical properties of grown layers are also described. Selective area growth has been successfully carried out with no deposit on the mask or irregular growth at the mask edge. The desorption process introduced by impinging ions is found to play an important role in the selective area growth.

Surface Cleaning Effects of Silicon Substrates by ECR Hydrogen Plasma on Subsequent Homoepitaxial Growth

2005 ◽  
Vol 475-479 ◽  
pp. 4067-4070
Author(s):  
Hyoun Woo Kim
Keyword(s):  
Electron Cyclotron Resonance ◽  
Substrate Surface ◽  
Hydrogen Plasma ◽  
Surface Cleaning ◽  
Silicon Substrates ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Defective Layer ◽  
Interfacial Oxygen

We have demonstrated the preparation of the almost defect-free homoepitaxial layer and the defective layer, respectively, with and without applying the in-situ cleaning of the silicon substrate surface using electron cyclotron resonance hydrogen plasma. Secondary ion mass spectroscopy indicated that the interfacial oxygen and carbon concentrations, respectively, decreased and increased with the in-situ cleaning. We have investigated the effect of process parameters such as microwave power, d.c bias, and cleaning time, on the epitaxial growth, by evaluating the cross-sectional transmission electron microscopy images of the subsequently deposited Si homoepitaxial film.

scholarly journals Hydrogen Incorporation During Deposition of a-Si:H From an Intense Source of SiH3

1997 ◽  
Vol 467 ◽  
Author(s):  
M. C. M. Van De Sanden ◽  
R. J. Severens ◽  
W. M. M. Kessels ◽  
F. Van De Pas ◽  
L. Van Ijzendoorn ◽  
...  
Keyword(s):  
Exchange Reaction ◽  
Atomic Hydrogen ◽  
Isotope Labeling ◽  
Hydrogen Incorporation ◽  
Silyl Radical ◽  
Intense Source

ABSTRACTThe incorporation of hydrogen during the fast deposition of a-Si:H from an expanding thermal arc is investigated by means of isotope labeling of the precursor gases silane and hydrogen. It is found that hydrogen in a-Si.H originates dominantly from the silyl radical. A small fraction of the hydrogen in a-Si:H is due to exchange reaction of atomic hydrogen in the plasma with hydrogen chemisorbed on the surface during growth.

Incorporation of Hydrogen and Oxygen into (t)a-C:H Thin Films Deposited using DECR plasma (*)

2001 ◽  
Vol 675 ◽  
Author(s):  
Fabrice Piazza ◽  
Dieter Grambole ◽  
Folker Herrmann ◽  
Gary Relihan ◽  
Marie France Barthe ◽  
...  
Keyword(s):  
Thin Films ◽  
Hydrogen Content ◽  
Electron Cyclotron Resonance ◽  
Plasma Reactor ◽  
Positron Annihilation Spectroscopy ◽  
Plasma Pressure ◽  
Nuclear Reaction Analysis ◽  
Hydrogen Incorporation ◽  
Si Substrates ◽  
Deposited Energy

ABSTRACTA distributed electron cyclotron resonance (DECR) plasma reactor powered by a microwave generator operating at 2.45 GHz (800 W) was used to deposit (t)a-C:H thin films at RT on <100> Si substrates RF biased within the range 25≤|V0|≤600 V.C2H2 was used as precursor. The plasma pressure was varied within the range 0.1≤P≤1.5 mtorr. The films were analysed using spectroscopic ellipsometry (SE) and Fourier transform infrared (FTIR) spectroscopy. The hydrogen content NH and the density of the films were determined from nuclear reaction analysis (NRA) using the resonance at 6.385 MeV of the reaction: 15N + 1H → 12C + 4He + γ. Positron annihilation spectroscopy was used to detect the porosity. The evolutions of NH as a function of the substrate ion current density n+ and as a function of V0 show that the hydrogen incorporation results from the competition between chemisorption and deposited energy density related effects. The increase of the hydrogen incorporation leads to a decrease in the film density and a lower deposition rate. The porosity of the films deposited at low pressure (∼0.1 mTorr) with V0= −80 V has been detected. The comparison between results of SRIM-2000 simulations and the evolution of NH as a function of V0 shows that the porosity and the hydrogen content are not correlated. The absorption of oxygen and nitrogen for the low density films has been detected from the observation of the 3250–4000 cm-1infra-red (IR) band.

Experimental study of the hot and warm electron populations in an electron cyclotron resonance argon–oxygen–hydrogen plasma

1995 ◽  
Vol 2 (6) ◽  
pp. 2138-2140 ◽  
Author(s):  
R. Friedlein ◽  
S. Herpich ◽  
H. Hiller ◽  
H. Wirth ◽  
G. Zschornack ◽  
...  
Keyword(s):  
Experimental Study ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Electron Cyclotron
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