Low dislocation density GaAs on Si heteroepitaxy with atomic hydrogen irradiation for optoelectronic integration

1993 ◽  
Vol 73 (11) ◽  
pp. 7376-7384 ◽  
Author(s):  
Yoshitaka Okada ◽  
Hirofumi Shimomura ◽  
Mitsuo Kawabe
Keyword(s):  
Dislocation Density ◽  
Atomic Hydrogen ◽  
Gaas On Si ◽  
Low Dislocation Density ◽  
Optoelectronic Integration

Very low dislocation density GaAs on Si using superlattices grown by MOCVD

1991 ◽  
Vol 107 (1-4) ◽  
pp. 479-482 ◽  
Author(s):  
Tetsuo Soga ◽  
Hironobu Nishikawa ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
Keyword(s):  
Dislocation Density ◽  
Gaas On Si ◽  
Low Dislocation Density

Crack-free and low dislocation density GaAs-on-Si grown by 2-reactor MOCVD system

1991 ◽  
Vol 112 (4) ◽  
pp. 791-796 ◽  
Author(s):  
T. Nishimura ◽  
K. Kadoiwa ◽  
M. Miyashita ◽  
H. Kumabe ◽  
T. Murotani
Keyword(s):  
Dislocation Density ◽  
Gaas On Si ◽  
Low Dislocation Density

Low dislocation density AlN on sapphire prepared by double sputtering and annealing

2020 ◽  
Vol 13 (9) ◽  
pp. 095501
Author(s):  
Ding Wang ◽  
Kenjiro Uesugi ◽  
Shiyu Xiao ◽  
Kenji Norimatsu ◽  
Hideto Miyake
Keyword(s):  
Dislocation Density ◽  
Low Dislocation Density

Growth Of Low-Dislocation-Density InP Single Crystals By The VCZ Method

1989 ◽  
Author(s):  
M. Tatsumi ◽  
T. Kawase ◽  
T. Araki ◽  
N. Yamabayashi ◽  
T. Iwasaki ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Single Crystals ◽  
Low Dislocation Density

Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density

2006 ◽  
Vol 89 (25) ◽  
pp. 251109 ◽  
Author(s):  
Te-Chung Wang ◽  
Tien-Chang Lu ◽  
Tsung-Shine Ko ◽  
Hao-Chung Kuo ◽  
Min Yu ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Low Dislocation Density

Heteroepitaxy and Characterization of Low-Dislocation-Density GaN on Periodically Grooved Substrates

2000 ◽  
Vol 639 ◽  
Author(s):  
T. Detchprohm ◽  
M. Yano ◽  
R. Nakamura ◽  
S. Sano ◽  
S. Mochiduki ◽  
...  
Keyword(s):  
Dislocation Density ◽  
New Method ◽  
Growth Technique ◽  
New Approach ◽  
Density Area ◽  
Low Dislocation Density ◽  
Dislocation Densities ◽  
Movpe Growth

ABSTRACTWe have developed a new method to prepare low-dislocation-density GaN by using periodically grooved substrates in a conventional MOVPE growth technique. This new approach was demonstrated for GaN grown on periodically grooved α-Al2O3(0001), 6H-SiC(0001)Si and Si(111) substrates. Dislocation densities were 2×107 cm−2 in low-dislocation-density area.

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