Deep level defects in GaAs on Si substrates grown by atomic hydrogen‐assisted molecular beam epitaxy

1996 ◽  
Vol 80 (8) ◽  
pp. 4770-4772 ◽  
Author(s):  
Yoshitaka Okada ◽  
James S. Harris ◽  
Werner Götz
Keyword(s):  
Molecular Beam Epitaxy ◽  
Atomic Hydrogen ◽  
Molecular Beam ◽  
Deep Level ◽  
Si Substrates ◽  
Gaas On Si

High-Quality GaAs Films on Si Substrates Grown by Atomic Hydrogen-Assisted Molecular Beam Epitaxy for Solar Cell Applications

1993 ◽  
Vol 32 (Part 2, No. 10B) ◽  
pp. L1556-L1558 ◽  
Author(s):  
Yoshitaka Okada ◽  
Shigeru Ohta ◽  
Hirofumi Shimomura ◽  
Akio Kawabata ◽  
Mitsuo Kawabe
Keyword(s):  
Solar Cell ◽  
Molecular Beam Epitaxy ◽  
Atomic Hydrogen ◽  
Molecular Beam ◽  
High Quality ◽  
Si Substrates ◽  
Gaas Films

GaAs – on – Si Epitaxy: Results for Coverage of ∼ 1 Monolayer

1987 ◽  
Vol 94 ◽  
Author(s):  
R. D. Bringans ◽  
M. A. Olmstead ◽  
R. I. G. Uhrberg ◽  
R. Z. Bachrach
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Core Level ◽  
Single Domain ◽  
Island Formation ◽  
Si Substrates ◽  
Gaas On Si ◽  
Si Epitaxy

ABSTRACTCore level spectroscopy measurements have been made on Si substrates with coverages of around one monolayer of As, Ga and GaAs. The interfaces were formed on on-axis Si(100) and Si(111) substrates using molecular beam epitaxy. Results are also presented for an arsenic monolayer on a single-domain Si(100) surface prepared by cutting the crystal off-axis by 4 degrees. The strong bonding between As monolayers and the surface of the substrate causes the GaAs to begin to form islands at average coverages of less than one monolayer. The surface between the islands is found to be terminated by a single atomic layer of As. Use of a Ga predeposition technique shows evidence of reducing the tendancy towards island formation.

Molecular Beam Epitaxy of Controlled Single Domain GaAs on Si (100)

1986 ◽  
Vol 25 (Part 2, No. 4) ◽  
pp. L285-L287 ◽  
Author(s):  
Mitsuo Kawabe ◽  
Toshio Ueda
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Domain ◽  
Gaas On Si

scholarly journals Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy [phys. stat. sol. (b) 244, No. 6, 1867–1871 (2007)]

2007 ◽  
Vol 244 (12) ◽  
pp. 4692-4692
Author(s):  
A. Armstrong ◽  
A. Corrion ◽  
C. Poblenz ◽  
U. K. Mishra ◽  
J. S. Speck ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
P Type

Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy

2003 ◽  
Vol 12 (2) ◽  
pp. 218-221 ◽  
Author(s):  
Zhou Da-Yong ◽  
Lan Qing ◽  
Kong Yun-Chuan ◽  
Miao Zhen-Hua ◽  
Feng Song-Lin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Atomic Hydrogen ◽  
Quantum Wire ◽  
Molecular Beam ◽  
Step Bunching ◽  
Wire Arrays
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