Effect of surface electric field on the gate capacitance of metal‐oxide‐semiconductor structures of ternary semiconductors

1988 ◽  
Vol 64 (2) ◽  
pp. 918-921 ◽  
Author(s):  
K. P. Ghatak ◽  
M. Mondal
Keyword(s):  
Electric Field ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Capacitance ◽  
Semiconductor Structures ◽  
Surface Electric Field ◽  
Ternary Semiconductors ◽  
Effect Of Surface

scholarly journals dc-electric-field-induced second-harmonic generation in Si(111)-SiO2-Cr metal-oxide-semiconductor structures

1996 ◽  
Vol 54 (3) ◽  
pp. 1825-1832 ◽  
Author(s):  
O. A. Aktsipetrov ◽  
A. A. Fedyanin ◽  
E. D. Mishina ◽  
A. N. Rubtsov ◽  
C. W. van Hasselt ◽  
...  
Keyword(s):  
Electric Field ◽  
Second Harmonic Generation ◽  
Metal Oxide ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Dc Electric Field

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

2015 ◽  
Vol 106 (5) ◽  
pp. 051605 ◽  
Author(s):  
Shenghou Liu ◽  
Shu Yang ◽  
Zhikai Tang ◽  
Qimeng Jiang ◽  
Cheng Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Interfacial Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures
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