Surface and bulk defects in hydrogenated amorphous silicon and silicon‐based alloy films

1988 ◽  
Vol 64 (10) ◽  
pp. 5045-5049 ◽  
Author(s):  
Tatsuo Shimizu ◽  
Xixiang Xu ◽  
Hideo Kidoh ◽  
Akiharu Morimoto ◽  
Minoru Kumeda
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Alloy Films ◽  
Silicon Based ◽  
Hydrogenated Amorphous

Thermal Equilibrium Defects in Hydrogenated Amorphous Silicon Based Alloy Films

1989 ◽  
Vol 149 ◽  
Author(s):  
Xixiang Xu ◽  
Akiharu Morimoto ◽  
Minoru Kumeda ◽  
Tatsuo Shimizu
Keyword(s):  
Elevated Temperature ◽  
Amorphous Silicon ◽  
Thermal Equilibrium ◽  
Hydrogenated Amorphous Silicon ◽  
Dangling Bonds ◽  
Alloy Films ◽  
Fast Cooling ◽  
Silicon Based ◽  
Equilibrium Defects ◽  
Hydrogenated Amorphous

ABSTRACTBoth the temperature dependence at elevated temperature and the increase after fast cooling from elevated temperature of the density of dangling bonds are measured by ESR for undoped hydrogenated amorphous silicon–based alloy films, a–Si:H, a–Si1−xCx:H, a–Si1−xNx:H and a–Si1−xOx:H. Both a–Si:H and a–Si1−xCx:H clearly show the increase in the density of dangling bonds at elevated temperature, while the increase is less prominent for a–Si1−xNx:H and a–Si1−xOx:H. The observed results for both a–Si:H and a–Si1−xCx:H are fairly well reproduced by the model recently proposed by Smith et al. The results of CPM measurements combined with those of ESR measurements suggest that the density of charged dangling bonds present in undoped a–Si:H also increases after fast cooling from elevated temperature.

scholarly journals Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
F. X. Abomo Abega ◽  
A. Teyou Ngoupo ◽  
J. M. B. Ndjaka
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Theoretical Work ◽  
Silicon Based ◽  
The Impact ◽  
Hydrogenated Amorphous

Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13  cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95   mA · c m − 2 , V OC = 0.973   V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.

Thermal equilibration in hydrogenated amorphous silicon-based films

1989 ◽  
Vol 114 ◽  
pp. 648-650 ◽  
Author(s):  
Tatsuo Shimizu ◽  
Xixiang Xu ◽  
Hiroyuki Sasaki ◽  
Akiharu Morimoto ◽  
Minoru Kumeda
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Thermal Equilibration ◽  
Silicon Based ◽  
Hydrogenated Amorphous
Sign in / Sign up

Export Citation Format

Share Document