Al/n‐GaAs Schottky barrier height modified with rare‐earth metal interlayer

1988 ◽  
Vol 64 (11) ◽  
pp. 6575-6577 ◽  
Author(s):  
K. Hirose ◽  
H. Tsuda ◽  
T. Mizutani
2010 ◽  
Vol 49 (5) ◽  
pp. 055701 ◽  
Author(s):  
Ying-Ying Zhang ◽  
Soon-Yen Jung ◽  
Jungwoo Oh ◽  
Hong-Sik Shin ◽  
Se-Kyung Oh ◽  
...  

1981 ◽  
Vol 38 (11) ◽  
pp. 865-866 ◽  
Author(s):  
H. Norde ◽  
J. de Sousa Pires ◽  
F. d’Heurle ◽  
F. Pesavento ◽  
S. Petersson ◽  
...  

2017 ◽  
Vol 5 (29) ◽  
pp. 7230-7235 ◽  
Author(s):  
Congxin Xia ◽  
Qiang Gao ◽  
Wenqi Xiong ◽  
Juan Du ◽  
Xu Zhao ◽  
...  

In X(OH)2/graphene (X = Ca, Mg) vdW heterostructures, the Schottky barrier height and contact types are effectively tuned by electric fields.


2020 ◽  
Vol 49 (42) ◽  
pp. 14985-14994
Author(s):  
Xu-Sheng Gao ◽  
Mei-Juan Ding ◽  
Jin Zhang ◽  
Li-Duo Zhao ◽  
Xiao-Ming Ren

All solid solutions (EuxY1−x-PTC, x = 0.013–0.82) are isomorphic to Eu-PTC, but different from Y-PTC, and show phase selectivity as well as excitation wavelength dependent emission.


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