Theoretical study of Schottky-barrier formation at epitaxial rare-earth-metal/semiconductor interfaces

2010 ◽  
Vol 81 (16) ◽  
Author(s):  
Kris T. Delaney ◽  
Nicola A. Spaldin ◽  
Chris G. Van de Walle
2018 ◽  
Vol 122 (2) ◽  
pp. 700-707 ◽  
Author(s):  
Donghai Yu ◽  
Ruobing Du ◽  
Ji-Chang Xiao ◽  
Shengming Xu ◽  
Chunying Rong ◽  
...  

2017 ◽  
Vol 46 (40) ◽  
pp. 14021-14033 ◽  
Author(s):  
Riccardo Freccero ◽  
Pavlo Solokha ◽  
Davide M. Proserpio ◽  
Adriana Saccone ◽  
Serena De Negri

The R2PdGe6series (R = rare earth metal) was analyzed from structural and theoretical point of view.


2020 ◽  
Vol 49 (42) ◽  
pp. 14985-14994
Author(s):  
Xu-Sheng Gao ◽  
Mei-Juan Ding ◽  
Jin Zhang ◽  
Li-Duo Zhao ◽  
Xiao-Ming Ren

All solid solutions (EuxY1−x-PTC, x = 0.013–0.82) are isomorphic to Eu-PTC, but different from Y-PTC, and show phase selectivity as well as excitation wavelength dependent emission.


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