Photochemical vapor deposition of amorphous silica films using disilane and perfluorosilanes: Defect structures and deposition mechanism

1988 ◽  
Vol 64 (8) ◽  
pp. 4168-4174 ◽  
Author(s):  
Hidehiko Nonaka ◽  
Kazuo Arai ◽  
Yoshiyuki Fujino ◽  
Shingo Ichimura
1988 ◽  
Vol 131 ◽  
Author(s):  
Hidehiko Nonaka ◽  
Kazuo Arai ◽  
Shingo Ichimura

ABSTRACTAmorphous silica films deposited from the mixture of gases (Si2 H6 and Si2F6) by deutrium-lamp CVD were studied by IR, vacuum UV, EPR and Auger electron (AE) spectrometries. The F-doping enhanced the film growth and removed defects in the film such as -H, -OH, and E' centers. A model on deposition and defect formation mechanisms was proposed based on the thermodynamic Stabilities of resultant HF in the reactions. The AES study showed that the film surface modified by activated oxygen had an increased hardness against electron beams.


1983 ◽  
Vol 59-60 ◽  
pp. 715-718 ◽  
Author(s):  
Tadashi Saitoh ◽  
Toshikazu Shimada ◽  
Masataka Migitaka ◽  
Yasuo Tarui

1990 ◽  
Vol 46 (1-4) ◽  
pp. 215-219 ◽  
Author(s):  
J. Elders ◽  
D. Bebelaar ◽  
J.D.W. van Voorst

1988 ◽  
Vol 52 (20) ◽  
pp. 1710-1712 ◽  
Author(s):  
V. Tavitian ◽  
C. J. Kiely ◽  
D. B. Geohegan ◽  
J. G. Eden

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