Defects and Their Control in SiO2 Films Prepared by D2 –Lamp Photochemical Vapor Deposition

1988 ◽  
Vol 131 ◽  
Author(s):  
Hidehiko Nonaka ◽  
Kazuo Arai ◽  
Shingo Ichimura
Keyword(s):  
Vapor Deposition ◽  
Defect Formation ◽  
Film Growth ◽  
Film Surface ◽  
Formation Mechanisms ◽  
Silica Films ◽  
Activated Oxygen ◽  
Surface Modified ◽  
Photochemical Vapor Deposition ◽  
Vacuum Uv

ABSTRACTAmorphous silica films deposited from the mixture of gases (Si2 H6 and Si2F6) by deutrium-lamp CVD were studied by IR, vacuum UV, EPR and Auger electron (AE) spectrometries. The F-doping enhanced the film growth and removed defects in the film such as -H, -OH, and E' centers. A model on deposition and defect formation mechanisms was proposed based on the thermodynamic Stabilities of resultant HF in the reactions. The AES study showed that the film surface modified by activated oxygen had an increased hardness against electron beams.

Low Density of Gap States in a-Si:H Deposited by Vacuum UV Direct Photochemical Vapor Deposition Method

1991 ◽  
Vol 30 (Part 2, No. 4A) ◽  
pp. L538-L540 ◽  
Author(s):  
Tatsuru Shirafuji ◽  
Masahiro Yoshimoto ◽  
Takashi Fuyuki ◽  
Hiroyuki Matsunami
Keyword(s):  
Vapor Deposition ◽  
Low Density ◽  
Deposition Method ◽  
Gap States ◽  
Photochemical Vapor Deposition ◽  
Vacuum Uv

Laser Photochemical Vapor Deposition of Ge Films (300 ≤ T ≤ 873 K) from GeH4: Roles of Ge2H6 and Ge

1986 ◽  
Vol 75 ◽  
Author(s):  
K. K. King ◽  
V. Tavitian ◽  
D. B. Geohegan ◽  
E. A. P. Cheng ◽  
S. A. Piette ◽  
...  
Keyword(s):  
Activation Energy ◽  
Laser Radiation ◽  
Vapor Deposition ◽  
Film Growth ◽  
Uv Laser ◽  
Cvd Growth ◽  
Excimer Laser Radiation ◽  
Parallel Geometry ◽  
Photochemical Vapor Deposition ◽  
Substrate Temperatures

AbstractThe photochemical growth of polycrystalline and amorphous Ge films on SiO2, GaAs and NaCl by photodissociating GeH4 with excimer laser radiation in parallel geometry is reported. For substrate temperatures (TS) below the pyrolytic threshold for GeH4 (553 K), two distinct regions of film growth are observed. In the 425< TS < 553 K range, the ultraviolet (UV) laser “seeds” the reactor with Ge2H6 which readily pyrolyzes at the surface, forming several monolayers of Ge which subsequently catalyze the pyrolysis of GeH4. The activation energy (Ea) in this region is the same as that for the normal CVD growth of Ge from GeH4 (Ea = 0.9 eV). If, however, the laser is pulsed throughout the film growth run, Ea falls by a factor of at least 2 and growth is observed for TS as low as 300 K. In this laser sustained region, film growth ceases in the absence of UV laser radiation. These results clearly demonstrate the ability of a UV laser to alter the reactor chemistry and dictate the species responsible for film growth.

Epitaxial Growth of Thin Ge Films on [001] Gaas by Laser Photochemical Vapor Deposition from GeH4

1987 ◽  
Vol 101 ◽  
Author(s):  
V. Tavitian ◽  
C. J. Kiely ◽  
J. G. Eden
Keyword(s):  
Growth Rate ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Epitaxial Film ◽  
Film Growth ◽  
Cross Sectional ◽  
Parallel Geometry ◽  
193 Nm ◽  
Photochemical Vapor Deposition ◽  
Substrate Temperatures

ABSTRACTEpitaxial Ge films have been grown on [001] GaAs for substrate temperatures (Ts) as low as 285°C by photodissociating GeH4 at 193 nm in parallel geometry. For a laser fluence of ~15 mJ - cm-2, the film growth rate varies from 0.6 to ~5 nm - min-1, depending upon Ts and gas pressure. Plan and cross-sectional TEM studies of the Ge/GaAs bicrystal demonstrate that the 400–700 A thick Ge films are single crystal and epitaxial with the substrate. The present limitation on epitaxial film thickness appears to be imposed by reduced adatom mobility at the temperatures investigated.

Surface Reaction Mechanisms in the Chemical Vapor Deposition of (Ba,Sr)TiO3 Films

2000 ◽  
Vol 655 ◽  
Author(s):  
M. Yamamuka ◽  
T. Kawahara ◽  
M. Tarutani ◽  
T. Horikawa ◽  
T. Oomori ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Reaction Mechanisms ◽  
Gas Flow ◽  
Surface Reaction ◽  
Film Growth ◽  
Film Surface ◽  
Chemical Vapor ◽  
Bst Films ◽  
Sticking Coefficients

AbstractSurface reaction mechanisms in the chemical vapor deposition of (Ba,Sr)TiO3 [BST] films were studied by investigating the effects of O2 gas and source supply ratios on the characteristics of atomic incorporation rates. The atomic incorporation rates of Ba, Sr, and Ti increased with increasing incident flux of each source material, and then the values of the atomic incorporation rates became saturated. The saturated values increased monotonously with increasing O2 gas flow rate, in a range where atomic incorporation reactions might be controlled by the kinetics on the film surface (kinetically limited). Accordingly, O2 gas may effect the behavior of film precursors on BST film growth surfaces. From this, we assumed a CVD model, where the precursors are transported onto the film surface and adsorbed on adsorptive sites, and where the O2 gas has an effect on the formation of the adsorptive sites. With this model, atomic incorporation rates and overall sticking coefficients for the CVD of BST films were numerically simulated, and were in good agreement with experimental results for several O2 flow rates and source supply ratios.

Using Molecular-Beam Mass Spectrometry to Study the Pecvd of Diamondlike Carbon Films

1993 ◽  
Vol 334 ◽  
Author(s):  
I.B. Graff ◽  
R.A. Pugliese ◽  
P.R. Westmoreland
Keyword(s):  
Mass Spectrometry ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Film Growth ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Total Flow ◽  
Measured Concentration ◽  
Molecular Beam Mass Spectrometry ◽  
Diamondlike Carbon

AbstractMolecular-beam mass spectrometry has been used to study plasma-enhanced chemical vapor deposition (PECVD) of diamondlike carbon films. A threshold-ionization technique was used to identify and quantify species in the plasma. Mole fractions of H, H2, CH4, C2H2, C2H6 and Ar were measured in an 83.3% CH4/Ar mixture at a pressure of 0.1 torr and a total flow of 30 sccm. Comparisons were made between mole fractions measured at plasma powers of 25W and 50W. These results were compared to measured concentration profiles and to film growth rates.

Atomic Layer Deposition of Chalcogenides for Next-Generation Phase Change Memory

2021 ◽  
Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Phase Change Memory ◽  
Film Surface ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Growth Technique ◽  
Layer Deposition ◽  
Change Memory

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...

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