Thickness dependence of material quality in GaAs‐on‐Si grown by metalorganic chemical vapor deposition

S. J. Pearton; C. R. Abernathy; R. Caruso; S. M. Vernon; K. T. Short; J. M. Brown; S. N. G. Chu; Michael Stavola; V. E. Haven

doi:10.1063/1.341141

Thickness dependence of material quality in GaAs‐on‐Si grown by metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.341141 ◽

1988 ◽

Vol 63 (3) ◽

pp. 775-783 ◽

Cited By ~ 38

Author(s):

S. J. Pearton ◽

C. R. Abernathy ◽

R. Caruso ◽

S. M. Vernon ◽

K. T. Short ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Thickness Dependence ◽

Material Quality ◽

Gaas On Si ◽

Metalorganic Chemical

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Thickness Dependence of Characteristics for (Ba, Sr)TiO3Thin Films Prepared by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.5389 ◽

2000 ◽

Vol 39 (Part 1, No. 9B) ◽

pp. 5389-5392 ◽

Cited By ~ 19

Author(s):

Yutaka Takeshima ◽

Katsuhiko Tanaka ◽

Yukio Sakabe

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Thickness Dependence ◽

Metalorganic Chemical

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Film thickness dependence of ferroelectric properties of c-axis-oriented epitaxial Bi4Ti3O12 thin films prepared by metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.1352566 ◽

2001 ◽

Vol 89 (7) ◽

pp. 3934-3938 ◽

Cited By ~ 57

Author(s):

Takayuki Watanabe ◽

Atsushi Saiki ◽

Keisuke Saito ◽

Hiroshi Funakubo

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Film Thickness ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Ferroelectric Properties ◽

Chemical Vapor ◽

Thickness Dependence ◽

Metalorganic Chemical

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Low-Temperature Metalorganic Chemical Vapor Deposition of GaAs on Si by Alternate Gas Flow of the Source Materials

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.225 ◽

1992 ◽

Vol 31 (Part 1, No. 2A) ◽

pp. 225-226 ◽

Cited By ~ 1

Author(s):

Kazuhisa Fujita ◽

Hiroto Kanao ◽

Yasushi Matsuda

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Gas Flow ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Gaas On Si ◽

Source Materials ◽

Metalorganic Chemical

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Photoluminescence studies of stress relief in selectively grown GaAs on Si by metalorganic chemical vapor deposition

Solid State Communications ◽

10.1016/0038-1098(90)90842-y ◽

1990 ◽

Vol 76 (3) ◽

pp. 303-306 ◽

Cited By ~ 8

Author(s):

E.H. Lingunis ◽

N.M. Haegel ◽

N.H. Karam

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Stress Relief ◽

Gaas On Si ◽

Photoluminescence Studies ◽

Metalorganic Chemical

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New mechanism for Si incorporation in GaAs‐on‐Si heteroepitaxial layers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.102232 ◽

1989 ◽

Vol 55 (16) ◽

pp. 1674-1676 ◽

Cited By ~ 15

Author(s):

S. Nozaki ◽

J. J. Murray ◽

A. T. Wu ◽

T. George ◽

E. R. Weber ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Gaas On Si ◽

Heteroepitaxial Layers ◽

Metalorganic Chemical

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Film Thickness Dependence of Electrical Properties for Pb(Zr,Ti)O 3 Thin Films Prepared on (111)Ir/TiO 2 /SiO 2 /Si and (111)Pt/TiO 2 /SiO 2 /Si Substrates by Pulsed-Metalorganic Chemical Vapor Deposition

Integrated Ferroelectrics ◽

10.1080/10584580390259867 ◽

2003 ◽

Vol 59 (1) ◽

pp. 1421-1428

Author(s):

T. Oikawa ◽

H. Funakubo ◽

H. Morioka ◽

K. Saito

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Electrical Properties ◽

Film Thickness ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Thickness Dependence ◽

Si Substrates ◽

Metalorganic Chemical

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Metalorganic Chemical Vapor Deposition of GaAs on Si Substrate Prepared by Room Temperature Chemical Cleaning Treatment

Chinese Physics Letters ◽

10.1088/0256-307x/14/9/014 ◽

1997 ◽

Vol 14 (9) ◽

pp. 690-693 ◽

Cited By ~ 2

Author(s):

Yin Min ◽

Lou Li-ren ◽

Fu Zhu-xi

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Si Substrate ◽

Chemical Cleaning ◽

Gaas On Si ◽

Cleaning Treatment ◽

Metalorganic Chemical

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Film Thickness Dependence of Electrical Properties for Pb(Zr,Ti)O3 Thin Films Prepared on (111)Ir/TiO2/SiO2/Si and (111)Pt/TiO2/SiO2/Si Substrates by Pulsed-Metalorganic Chemical Vapor Deposition

Integrated Ferroelectrics ◽

10.1080/714040803 ◽

2003 ◽

Vol 59 (1) ◽

pp. 1421-1428 ◽

Cited By ~ 1

Author(s):

T. Oikawa ◽

H. Funakubo ◽

H. Morioka ◽

K. Saito

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Electrical Properties ◽

Film Thickness ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Thickness Dependence ◽

Si Substrates ◽

Metalorganic Chemical

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Characterization of epitaxially grown GaAs on Si substrates with III‐V compounds intermediate layers by metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.335363 ◽

1985 ◽

Vol 57 (10) ◽

pp. 4578-4582 ◽

Cited By ~ 67

Author(s):

Tetsuo Soga ◽

Shuzo Hattori ◽

Shiro Sakai ◽

Masanari Takeyasu ◽

Masayoshi Umeno

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Si Substrates ◽

Gaas On Si ◽

Intermediate Layers ◽

Metalorganic Chemical

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Microprobe photoluminescence measurement on heteroepitaxial GaAs on Si grown by metalorganic chemical vapor deposition

Applied Physics A Solids and Surface ◽

10.1007/bf00324416 ◽

1991 ◽

Vol 52 (3) ◽

pp. 188-191 ◽

Cited By ~ 2

Author(s):

H.-S. Kim ◽

C. Lee ◽

M. Takai ◽

S. Namba ◽

S.-K. Min

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Gaas On Si ◽

Metalorganic Chemical

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