Characterization of epitaxially grown GaAs on Si substrates with III‐V compounds intermediate layers by metalorganic chemical vapor deposition

1985 ◽  
Vol 57 (10) ◽  
pp. 4578-4582 ◽  
Author(s):  
Tetsuo Soga ◽  
Shuzo Hattori ◽  
Shiro Sakai ◽  
Masanari Takeyasu ◽  
Masayoshi Umeno
1987 ◽  
Vol 62 (3) ◽  
pp. 862-867 ◽  
Author(s):  
S. J. Pearton ◽  
S. M. Vernon ◽  
C. R. Abernathy ◽  
K. T. Short ◽  
R. Caruso ◽  
...  

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