New mechanism for Si incorporation in GaAs‐on‐Si heteroepitaxial layers grown by metalorganic chemical vapor deposition

1989 ◽  
Vol 55 (16) ◽  
pp. 1674-1676 ◽  
Author(s):  
S. Nozaki ◽  
J. J. Murray ◽  
A. T. Wu ◽  
T. George ◽  
E. R. Weber ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Gaas On Si ◽  
Heteroepitaxial Layers ◽  
Metalorganic Chemical

Principles and Applications of Metalorganic Chemical Vapor Deposition for the Growth of ih-V Compounds on Si Substrates

1988 ◽  
Vol 116 ◽  
Author(s):  
Russell D. Dupuis
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
High Quality ◽  
Si Substrates ◽  
Heteroepitaxial Layers ◽  
Metalorganic Chemical

AbstractThe use of the metalorganic chemical vapor deposition thin film materials technology in the heteroepitaxial growth of GaAs on Si substrates is of increasing interest for a wide variety of applications. This paper will describe the principles and applications of this materials technology and discuss possible future approaches to the growth of high-quality HI-V heteroepitaxial layers on Si substrates.

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