Microprobe photoluminescence measurement on heteroepitaxial GaAs on Si grown by metalorganic chemical vapor deposition

H.-S. Kim; C. Lee; M. Takai; S. Namba; S.-K. Min

doi:10.1007/bf00324416

Microprobe photoluminescence measurement on heteroepitaxial GaAs on Si grown by metalorganic chemical vapor deposition

Applied Physics A Solids and Surface ◽

10.1007/bf00324416 ◽

1991 ◽

Vol 52 (3) ◽

pp. 188-191 ◽

Cited By ~ 2

Author(s):

H.-S. Kim ◽

C. Lee ◽

M. Takai ◽

S. Namba ◽

S.-K. Min

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Gaas On Si ◽

Metalorganic Chemical

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Low-Temperature Metalorganic Chemical Vapor Deposition of GaAs on Si by Alternate Gas Flow of the Source Materials

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.225 ◽

1992 ◽

Vol 31 (Part 1, No. 2A) ◽

pp. 225-226 ◽

Cited By ~ 1

Author(s):

Kazuhisa Fujita ◽

Hiroto Kanao ◽

Yasushi Matsuda

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Gas Flow ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Gaas On Si ◽

Source Materials ◽

Metalorganic Chemical

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Photoluminescence studies of stress relief in selectively grown GaAs on Si by metalorganic chemical vapor deposition

Solid State Communications ◽

10.1016/0038-1098(90)90842-y ◽

1990 ◽

Vol 76 (3) ◽

pp. 303-306 ◽

Cited By ~ 8

Author(s):

E.H. Lingunis ◽

N.M. Haegel ◽

N.H. Karam

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Stress Relief ◽

Gaas On Si ◽

Photoluminescence Studies ◽

Metalorganic Chemical

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New mechanism for Si incorporation in GaAs‐on‐Si heteroepitaxial layers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.102232 ◽

1989 ◽

Vol 55 (16) ◽

pp. 1674-1676 ◽

Cited By ~ 15

Author(s):

S. Nozaki ◽

J. J. Murray ◽

A. T. Wu ◽

T. George ◽

E. R. Weber ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Gaas On Si ◽

Heteroepitaxial Layers ◽

Metalorganic Chemical

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Metalorganic Chemical Vapor Deposition of GaAs on Si Substrate Prepared by Room Temperature Chemical Cleaning Treatment

Chinese Physics Letters ◽

10.1088/0256-307x/14/9/014 ◽

1997 ◽

Vol 14 (9) ◽

pp. 690-693 ◽

Cited By ~ 2

Author(s):

Yin Min ◽

Lou Li-ren ◽

Fu Zhu-xi

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Si Substrate ◽

Chemical Cleaning ◽

Gaas On Si ◽

Cleaning Treatment ◽

Metalorganic Chemical

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Characterization of epitaxially grown GaAs on Si substrates with III‐V compounds intermediate layers by metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.335363 ◽

1985 ◽

Vol 57 (10) ◽

pp. 4578-4582 ◽

Cited By ~ 67

Author(s):

Tetsuo Soga ◽

Shuzo Hattori ◽

Shiro Sakai ◽

Masanari Takeyasu ◽

Masayoshi Umeno

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Si Substrates ◽

Gaas On Si ◽

Intermediate Layers ◽

Metalorganic Chemical

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Metalorganic chemical vapor deposition of GaAs on Si for solar cell applications

Journal of Crystal Growth ◽

10.1016/0022-0248(86)90348-9 ◽

1986 ◽

Vol 77 (1-3) ◽

pp. 530-538 ◽

Cited By ~ 56

Author(s):

S.M. Vernon ◽

V.E. Haven ◽

S.P. Tobin ◽

R.G. Wolfson

Keyword(s):

Chemical Vapor Deposition ◽

Solar Cell ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Gaas On Si ◽

Metalorganic Chemical

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Heteroepitaxial InP layers grown by metalorganic chemical vapor deposition on novel GaAs on Si buffers obtained by molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.350814 ◽

1992 ◽

Vol 71 (9) ◽

pp. 4329-4332 ◽

Cited By ~ 3

Author(s):

D. J. Olego ◽

M. Tamura ◽

Y. Okuno ◽

T. Kawano ◽

A. Hashimoto

Keyword(s):

Chemical Vapor Deposition ◽

Molecular Beam Epitaxy ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Molecular Beam ◽

Chemical Vapor ◽

Gaas On Si ◽

Metalorganic Chemical

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Thickness dependence of material quality in GaAs‐on‐Si grown by metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.341141 ◽

1988 ◽

Vol 63 (3) ◽

pp. 775-783 ◽

Cited By ~ 38

Author(s):

S. J. Pearton ◽

C. R. Abernathy ◽

R. Caruso ◽

S. M. Vernon ◽

K. T. Short ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Thickness Dependence ◽

Material Quality ◽

Gaas On Si ◽

Metalorganic Chemical

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Heterointerface stability in GaAs‐on‐Si grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.98333 ◽

1987 ◽

Vol 51 (9) ◽

pp. 682-684 ◽

Cited By ~ 23

Author(s):

S. J. Pearton ◽

D. L. Malm ◽

L. A. Heimbrook ◽

J. Kovalchick ◽

C. R. Abernathy ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Gaas On Si ◽

Metalorganic Chemical

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Minority Carrier Properties of GaAs on Si Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.1494 ◽

1994 ◽

Vol 33 (Part 1, No. 3A) ◽

pp. 1494-1498 ◽

Cited By ~ 8

Author(s):

Tetsuo Soga ◽

Takashi Jimbo ◽

Masayoshi Umeno

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Minority Carrier ◽

Chemical Vapor ◽

Gaas On Si ◽

Metalorganic Chemical

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